Download Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors.

Whites, EE 320
Lecture 30
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Lecture 30: Biasing MOSFET
Amplifiers. MOSFET Current Mirrors.
There are two different environments in which MOSFET
amplifiers are found, (1) discrete circuits and (2) integrated
circuits (ICs). The methods of biasing transistor amplifiers are
different in these two environments.
Why? Primarily because it’s “expensive” to fabricate resistors
(and large capacitors) on ICs. Of course, this is not a problem
for discrete component circuits.
We will discuss these two environments separately.
Biasing Discrete MOSFET Amplifier Circuits
The methods we can use here are virtually identical to the BJT
amplifier circuits we saw in earlier in Lecture 17. A few of these
biasing topologies are:
(Fig. 7.48d)
© 2016 Keith W. Whites
Whites, EE 320
Lecture 30
(Fig. 7.50)
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(Fig. 7.48e)
Example N30.1. Design the MOSFET amplifier below so that
I D  1 mA and allow for a drain voltage swing of 2 V. The
amplifier is to present a 1-M input resistance to a capacitively
coupled input signal. The transistor has kn W L  0.5 mA/V2
and Vt  2 V.
I D  1 mA


vi
vo
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Lecture 30
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We can see directly from this circuit that at DC, VG  0 . Recall
that for operation in the saturation mode VGD  Vt (with VGS  0 ).
Now, for 2 -V swing in vo and large AC gain, we want RD to be
large. Hence, let’s choose VD  0 (since Vt  2 V). Then for this
2 -V swing in vo
VGD min  0  2  2 V  Vt
and
VGD max  0  2  2 V  Vt
Because of these results, the MOSFET stays in saturation.
Consequently, with VD  0
V  VD 10  0
RD  DD

 10 k
1 mA
1 mA
For a saturated MOSFET
1 W
2
2
I D  kn VGS  Vt   0.25  103 VGS  2 
2
L
For I D  1 mA 
(VGS  2) 2  4
or
VGS  2  2  +4 V or 0 V.
With VG  0 and VGS  4 V then VS  4 V. Hence,
4   10 
 6 kΩ
RS 
1 mA
Lastly, for a 1-MΩ AC input resistance, then referring to the
input portion of the small-signal model
Whites, EE 320
Lecture 30
vgs
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g m vgs
vo
we see that
Rin  RG  RG  1 M
Biasing IC MOSFET Amplifiers. Current Mirrors.
For MOSFET amplifier biasing in ICs, DC current sources are
usually used. As discussed in Lecture 17, “golden currents” are
produced using sophisticated multi-component circuits. Then
current mirroring (aka current steering) circuits are used to
replicate this golden current to provide DC biasing currents at
different points in the IC.
The basic MOSFET current mirror is shown in Fig. 4.33b for
NMOS. (This is basically the same circuit we saw with the BJT
current mirror in Lecture 17.)
Whites, EE 320
Lecture 30
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(Fig. 8.1)
Q1 has the drain and gate terminals connected together. This
forces Q1 to operate in the saturation mode in this particular
circuit if I D1  0 . In this mode
1
W
2
I D1  kn1 1 VGS  Vt1 
(8.1),(1)
2
L1
With a zero gate current,
I REF  I D1
(8.2),(2)
where we can easily see from the above circuit that
V V
(8.2),(3)
I REF  DD GS
R
Now, we’ll assume the two MOSFETs in the circuit have the
same VGS. Consequently, the drain current in the second
transistor is
1
W
2
I D 2  kn 2 2 VGS  Vt 2 
(8.3),(4)
2
L2
If these two transistors are perfectly matched but perhaps
fabricated with different channel dimensions, then kn1  kn 2 ,
and Vt1  Vt 2 so that we see by comparing (1) and (4) that
Whites, EE 320
Lecture 30
I D 2  IO 
W2 L2
W L
I D1  2 2 I REF
W1 L1
W1 L1
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(8.4),(5)
In this NMOS current mirror shown above, Q2 acts as a current
sink since it pulls current I O  I D 2 from the load.
In PMOS this current mirror circuit is constructed as
VDD
Q2
Q1
0
IO  I D 2
R
I REF
To amplifier circuit
Here Q2 acts as a current source since it pushes current I O  I D 2
into the load.
Example N30.2. Design an NMOS current mirror with VDD  5
V, and I REF  100 A. For the matched transistors L  10 m,
W  100 m, Vt  1 V, and kn  20 A/V2.
Referring to the NMOS current mirror circuit in Fig. 8.1 above,
notice that the drain of Q1 is connected to its gate so that
VGD1  0 , which is less than Vt. This means Q1 is operating in the
saturation mode (or is possibly cutoff).
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Lecture 30
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Assuming operation in saturation,
1 W
2
I D1  I REF  kn VGS  Vt 
L
2
1
100
2
  20  106 
 VGS  1
2
10
For I REF  100 μA  100  10 10 VGS  1 or
VGS  1  1  2 V or 0 V
2
Now, by KVL
VDD  I REF R  VGS
With VGS = 2 V then
R
VDD  VGS
52

 30 k
I REF
100 μA
Here are a few additional questions based on this design:
 What is the lowest possible value for VO  VD 2 and still have a
functioning current mirror?
As with Q1, the transistor Q2 must also operate in saturation if
it’s going to supply a constant current.
VGD 2  Vt  VG 2  VD 2  Vt
Hence
 VO  VD 2  VG 2  Vt
or VO  VGS  Vt  2  1  1 V
VO min  1 V
Therefore,
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Lecture 30
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 Imagine that VA  107 L . (Notice that VA is proportional to the
channel length, which is commonplace.) What is ro?
VA  107 10  106  100 V
V
100 V
 1 MΩ
ro  A 
I O 100 μA
 What is change in the output current IO if VO changes by 3 V?
V
3V
 3 μA
ΔIO  O 
ro
1 MΩ