DS32KHz 32.768 KHz TCXO
									
... * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. The Dallas ...
                        	... * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. The Dallas ...
									DATA  SHEET BSR15; BSR16 PNP switching transistors Product specification
									
... designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indem ...
                        	... designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indem ...
									B  2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection
									
... The internal gate driving circuitry of FOD8316 can be used with either a single positive power supply, VDD2, or a dual positive and negative supply, VDD2 and VSS. The output driver stage, VO, is made up of a pair of PMOS and NMOS transistors, which facilitates close to rail-to-rail output swing. Thi ...
                        	... The internal gate driving circuitry of FOD8316 can be used with either a single positive power supply, VDD2, or a dual positive and negative supply, VDD2 and VSS. The output driver stage, VO, is made up of a pair of PMOS and NMOS transistors, which facilitates close to rail-to-rail output swing. Thi ...
									ZXSC100  SINGLE CELL DC-DC CONVERTER SOLUTION Description
									
... The circuit can start up under full load with regulation maintained down to an input voltage of only 0.926 volts. The solution configuration ensures optimum efficiency over a wide range of load currents. Several circuit configurations are possible with loads up to 2W. The step up output voltage is e ...
                        	... The circuit can start up under full load with regulation maintained down to an input voltage of only 0.926 volts. The solution configuration ensures optimum efficiency over a wide range of load currents. Several circuit configurations are possible with loads up to 2W. The step up output voltage is e ...
									DATA  SHEET BCW61 series PNP general purpose transistors
									
... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
                        	... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
									Properly protecting LED light strings keeps them working
									
... boom in product designs incorporating LEDs. Part of their appeal is that they are low cost, high performance, require virtually no maintenance, and can theoretically last forever. They are increasingly being used in harsh outdoor lighting environments, which is different from their original use main ...
                        	... boom in product designs incorporating LEDs. Part of their appeal is that they are low cost, high performance, require virtually no maintenance, and can theoretically last forever. They are increasingly being used in harsh outdoor lighting environments, which is different from their original use main ...
									C41021922
									
... Optical, Structural and Elemental Analysis of New Nonlinear Organic Single Crystal of Urea L-Asparagine ...
                        	... Optical, Structural and Elemental Analysis of New Nonlinear Organic Single Crystal of Urea L-Asparagine ...
									Hour 1 Atoms to frequency
									
... electricity by the application of physical pressure. What we have said concerning what makes an atom a conductor or insulator also applies to molecules. While a metal, like Iron, mixes with Oxygen to make iron oxide, the result is an insulator. The outer electrons of the Iron atoms are tied up in bo ...
                        	... electricity by the application of physical pressure. What we have said concerning what makes an atom a conductor or insulator also applies to molecules. While a metal, like Iron, mixes with Oxygen to make iron oxide, the result is an insulator. The outer electrons of the Iron atoms are tied up in bo ...
									here
									
... gain (the constant of proportionality between the difference in photo-cell outputs and the current driving the motor), though increasing it too much can cause other problems. 2† Don't make the voltage difference across the circuit more than 20 volts (to keep from damaging any components). You can po ...
                        	... gain (the constant of proportionality between the difference in photo-cell outputs and the current driving the motor), though increasing it too much can cause other problems. 2† Don't make the voltage difference across the circuit more than 20 volts (to keep from damaging any components). You can po ...
									Experiment/Project 1 Diodes/LEDs/Polarity Checker
									
... These devices emit a tone of 200 Hz when connected to the proper supply voltage. Although there are no polarity designations on the circuit symbol, most of these devices are polarity sensitive. For the MultiSim symbols, the upper terminal is the + terminal. In general, there are polarity markings on ...
                        	... These devices emit a tone of 200 Hz when connected to the proper supply voltage. Although there are no polarity designations on the circuit symbol, most of these devices are polarity sensitive. For the MultiSim symbols, the upper terminal is the + terminal. In general, there are polarity markings on ...
									LM361
									
... The LM161/LM361 is a very high speed differential input, complementary TTL output voltage comparator with improved characteristics over the SE529/NE529 for which it is a pin-for-pin replacement. The device has been optimized for greater speed performance and lower input offset voltage. Typically del ...
                        	... The LM161/LM361 is a very high speed differential input, complementary TTL output voltage comparator with improved characteristics over the SE529/NE529 for which it is a pin-for-pin replacement. The device has been optimized for greater speed performance and lower input offset voltage. Typically del ...
									Monday, Feb. 20, 2012
									
... • When a circuit is powered by a battery (or a source of emf) the charge can flow through the circuit. • Electric Current: Any flow of charge – Current can flow whenever there is potential difference between the ends of a conductor (or when the two ends have opposite charges) • The current can flow ...
                        	... • When a circuit is powered by a battery (or a source of emf) the charge can flow through the circuit. • Electric Current: Any flow of charge – Current can flow whenever there is potential difference between the ends of a conductor (or when the two ends have opposite charges) • The current can flow ...
									High Performance, Low Power, ISM Band FSK/GFSK/OOK/MSK/GMSK Transceiver IC ADF7023-J Silicon Anomaly
									
... One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2011 Analog Devices, Inc. All rights reserved. ...
                        	... One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2011 Analog Devices, Inc. All rights reserved. ...
									IGBT (Insulated Gate Bipolar Transistor) 1 Differences Between MOSFET and IGBT
									
... The conductivity of the resistor on the base branch is increased (modulated) when the IGBT is turned-on. This way, the greater part of the load current is flowing over the base branch. These effects only show for the user by a turn-on delay time and a tail current at turn-off. For this reason, the d ...
                        	... The conductivity of the resistor on the base branch is increased (modulated) when the IGBT is turned-on. This way, the greater part of the load current is flowing over the base branch. These effects only show for the user by a turn-on delay time and a tail current at turn-off. For this reason, the d ...
									ACTIVITY #2: Digital Potentiometer
									
... Parallax, Inc. and Southern Illinois University are not responsible for special, incidental, or consequential damages resulting from any breach of warranty, or under any legal theory, including lost profits, downtime, goodwill, damage to or replacement of equipment or property, or any costs of recov ...
                        	... Parallax, Inc. and Southern Illinois University are not responsible for special, incidental, or consequential damages resulting from any breach of warranty, or under any legal theory, including lost profits, downtime, goodwill, damage to or replacement of equipment or property, or any costs of recov ...
									Diode Failure Scenarios Modes of Failure
									
... Cause: Over voltage or current. Usually due to out of phase paralleling, a lightning strike or other abnormal transient. This mode of diode failure may also occur if a voltage is imposed upon the terminals of a brushless generator while it is at rest. Effects: Increased excitation. Exciter rotor and ...
                        	... Cause: Over voltage or current. Usually due to out of phase paralleling, a lightning strike or other abnormal transient. This mode of diode failure may also occur if a voltage is imposed upon the terminals of a brushless generator while it is at rest. Effects: Increased excitation. Exciter rotor and ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.