 
									
								
									Lab #6
									
... In this equivalent circuit, rbb, ree, and rcc represent the ohmic resistance of each region. Thus, rbb is the resistance of the thin base region, ree is the resistance of the emitter region, etc. Typical values of these ohmic resistances are: rbb = 20 to 200 Ω ree = 0.5 to 5Ω rcc = 10 to 100Ω . The ...
                        	... In this equivalent circuit, rbb, ree, and rcc represent the ohmic resistance of each region. Thus, rbb is the resistance of the thin base region, ree is the resistance of the emitter region, etc. Typical values of these ohmic resistances are: rbb = 20 to 200 Ω ree = 0.5 to 5Ω rcc = 10 to 100Ω . The ...
									Using Forward Voltage to Measure Semiconductor Junction
									
... Jason Chonko, Senior Applications Engineer Keithley Instruments, Inc. ...
                        	... Jason Chonko, Senior Applications Engineer Keithley Instruments, Inc. ...
									The Comparison of the Pulse and Constant
									
... working either at the same supplying voltage or current. Earlier used simply circuits with transformers and rectifiers are not applied now due to their disadvantages like: cost, mass, dimensions and possibility of stroboscopic effect. Today, the AC/DC converters are the most often used type of suppl ...
                        	... working either at the same supplying voltage or current. Earlier used simply circuits with transformers and rectifiers are not applied now due to their disadvantages like: cost, mass, dimensions and possibility of stroboscopic effect. Today, the AC/DC converters are the most often used type of suppl ...
									A Single-Phase Energy Meter with Capacitive Power Supply
									
... 6 Current-sensing circuit In order for the energy meter to be more accurate over its full dynamic range, the dynamic range can be split into two parts, with each part having a different gain. Therefore two phase current signals are sampled for sensing by the ADCs. Two signals are sampled for the pha ...
                        	... 6 Current-sensing circuit In order for the energy meter to be more accurate over its full dynamic range, the dynamic range can be split into two parts, with each part having a different gain. Therefore two phase current signals are sampled for sensing by the ADCs. Two signals are sampled for the pha ...
									Synthesis, Crystal Growth, Structural, Optical, Thermal and
									
... Thermogravimetric analysis of the LCDHCL crystal was carried out employing Perkin Elmer, US, TGA7 Analyzer between 50 and 900 o C in the nitrogen atmosphere at a heating rate of 10 o C / min (Figure 8). A small piece of crystal weighing 1.6420 mg was used for this investigation. From the TG–DTA curv ...
                        	... Thermogravimetric analysis of the LCDHCL crystal was carried out employing Perkin Elmer, US, TGA7 Analyzer between 50 and 900 o C in the nitrogen atmosphere at a heating rate of 10 o C / min (Figure 8). A small piece of crystal weighing 1.6420 mg was used for this investigation. From the TG–DTA curv ...
									Phys204(Electronics). - University of Belize
									
... perform calculations related to single-input inverting amplifier circuits; perform calculations related to single-input non-inverting amplifier circuits; describe the use of the inverting amplifier as a summing amplifier; solve problems related to summing amplifier circuits; describe the use of the ...
                        	... perform calculations related to single-input inverting amplifier circuits; perform calculations related to single-input non-inverting amplifier circuits; describe the use of the inverting amplifier as a summing amplifier; solve problems related to summing amplifier circuits; describe the use of the ...
									FR011L5J (11mΩ, -30V) Low-Side Reverse Bias / Reverse Polarity Protector FR011L
									
... qualification devices, where the predicted failure rate is less than 0.01% at the specified voltage for 24 hours. It is intended to indicate the device’s ability to withstand transient events that exceed the recommended operating voltage rating. Specification is based on qualification devices tested ...
                        	... qualification devices, where the predicted failure rate is less than 0.01% at the specified voltage for 24 hours. It is intended to indicate the device’s ability to withstand transient events that exceed the recommended operating voltage rating. Specification is based on qualification devices tested ...
									AP3171 - Diodes Incorporated
									
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
                        	... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
									FXWA9306 Dual Bi-Directional I C-Bus® and SMBus Voltage- Level Translator
									
... As with standard I2C-bus systems, pull-up resistors are required to provide the logic HIGH levels on the translator’s bus. The FXWA9306 has a standard open2 drain configuration of the I C-bus. The size of these pullup resistors depends on the system, but each side of the translator must have a pull- ...
                        	... As with standard I2C-bus systems, pull-up resistors are required to provide the logic HIGH levels on the translator’s bus. The FXWA9306 has a standard open2 drain configuration of the I C-bus. The size of these pullup resistors depends on the system, but each side of the translator must have a pull- ...
									section 16055 - overcurrent protective device coordination
									
... Power transformer kVA, voltages, winding connections, impedance, and X/R ratios c. Generator kVA, voltage, and impedances d. Conductor sizes, insulation and length e. Conduit material, magnetic or non-magnetic. f. Busway current rating and impedance. g. Motor horsepower and code letter designation p ...
                        	... Power transformer kVA, voltages, winding connections, impedance, and X/R ratios c. Generator kVA, voltage, and impedances d. Conductor sizes, insulation and length e. Conduit material, magnetic or non-magnetic. f. Busway current rating and impedance. g. Motor horsepower and code letter designation p ...
									File
									
... The common-emitter configuration (CE) shown in figure 2-16 view A is the arrangement most frequently used in practical amplifier circuits, since it provides good voltage, current, and power gain. The common emitter also has a somewhat low input resistance (500 ohms-1500 ohms), because the input is a ...
                        	... The common-emitter configuration (CE) shown in figure 2-16 view A is the arrangement most frequently used in practical amplifier circuits, since it provides good voltage, current, and power gain. The common emitter also has a somewhat low input resistance (500 ohms-1500 ohms), because the input is a ...
									RF3928 280W GaN WIDEBAND PULSED POWER AMPLIFIER Features
									
... The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device pri ...
                        	... The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device pri ...
									Flat Panel Displays --- Principles, Materials and Processes
									
... Left: Reflective GHD. Off state: Dye absorption yields a dark state. On state: Smooth metal electrode reflects almost 100 percent of the incoming light, which is forward scattered by the front scattering film. Right: Structure of a stacked three – layer GHD. It generates color without using a color ...
                        	... Left: Reflective GHD. Off state: Dye absorption yields a dark state. On state: Smooth metal electrode reflects almost 100 percent of the incoming light, which is forward scattered by the front scattering film. Right: Structure of a stacked three – layer GHD. It generates color without using a color ...
									Computer Engineering
									
... some implemented as symmetrical arrays of simple logic devices others include more complex and specialized logic blocks ...
                        	... some implemented as symmetrical arrays of simple logic devices others include more complex and specialized logic blocks ...
									ZXCT1009  HIGH-SIDE CURRENT MONITOR Description
									
... Application Information (cont.) PCB trace shunt resistor for low cost solution The figure below shows output characteristics of the device when using a PCB resistive trace for a low cost solution in replacement for a conventional shunt resistor. The graph shows the linear rise in voltage across the ...
                        	... Application Information (cont.) PCB trace shunt resistor for low cost solution The figure below shows output characteristics of the device when using a PCB resistive trace for a low cost solution in replacement for a conventional shunt resistor. The graph shows the linear rise in voltage across the ...
									DS3668 - Texas Instruments
									
... and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s te ...
                        	... and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s te ...
									Lab 4: Bipolar Junction Transistors (BJT)
									
... a. Build the circuit of Figure 1. Confirm your prelab calculation for the output current with your load (resistor decade box) at 0 ohms. b. Increase the load in 100 steps until the current source starts to break down, i.e. IC is no longer constant. Do this step quickly and compare to your Prelab pr ...
                        	... a. Build the circuit of Figure 1. Confirm your prelab calculation for the output current with your load (resistor decade box) at 0 ohms. b. Increase the load in 100 steps until the current source starts to break down, i.e. IC is no longer constant. Do this step quickly and compare to your Prelab pr ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									