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ZnO-based transparent thin-film transistors
ZnO-based transparent thin-film transistors

... SiO2 gate insulator. An interesting aspect of this TFT is that the ZnO is prepared via chemical solution deposition with subsequent annealing. The electrical performance of this device is not known since drain current–drain voltage and other conventional device characteristics are not specified in R ...
RA33H1516M1
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... 2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality a ...
gamma and x-rays detection
gamma and x-rays detection

... field. The resultant charge is integrated by a charge sensitive preamplifier and converted to a voltage pulse with an amplitude proportional to the original photon energy. The depletion depth being inversely proportional to net electrical impurity concentration, and since the counting efficiency is ...
Science Update Programme Introduction to Conducting Polymers
Science Update Programme Introduction to Conducting Polymers

... crystals displays or plasma displays (the display can be less than 2 mm thick) • Flexible Display Devices for mobile phones, PDA, watches, etc. • Multicolor displays can also be made by combining materials with different emitting colors. ...
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LM432 数据资料 dataSheet 下载

... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant ...
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Lecture 37

Specification Status: Released  PolyZen GENERAL DESCRIPTION
Specification Status: Released PolyZen GENERAL DESCRIPTION

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Growth and Characterization of Pure and Ammonium nickel (II

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A Multiple-Valued Logic and Memory With Combined Single

... DVANCES in large-scale integrated circuits (LSIs) have been based mostly on binary logic, and some research on emerging single-electron devices (SEDs) has followed the same path [1]–[5]. However, the problems in present LSI technology, such as increased interconnect delay and power consumption [6], ...
What`s wrong with drift chambers?
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DATA  SHEET BC859; BC860 PNP general purpose transistors
DATA SHEET BC859; BC860 PNP general purpose transistors

... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
Bias Current Effect on Gain of a CMOS OTA
Bias Current Effect on Gain of a CMOS OTA

... amplifiers requires efficient circuit design techniques [2]. A folded cascode configuration has been widely used in CMOS circuits. The reason is that the output capacitance plays the same role as the compensation capacitance [3]. This configuration also increases transconductance (g0) which in turns ...
Measurement Techniques
Measurement Techniques

... Examples are differential diodes, optical sensors, and reflex sensors. Other types of silicon detectors are built-in as parts of optocouplers. One of the largest application areas is remote control of TV sets and other home entertainment appliances. Different applications require specialized detecto ...
Organic Semiconductors - Physik Uni
Organic Semiconductors - Physik Uni

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*Siemens AG, Corporate Technology, D-81730 Muenchen, Germany, e-mail:

... the planes of the multilayer structure. Even higher ZT values of 3.8 were obtained for quantum well confinement multilayer structures with temperature gradient and current transport parallel to the planes [8] (low dimensional or 2D system). The purpose of this work is to investigate theoretically th ...
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Cree XLamp LED Electrical Overstress Application Note

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Energy Efficient Wide Bandgap Devices
Energy Efficient Wide Bandgap Devices

... it is important to understand what drives the commercial market to use WBG devices versus other more established materials such as silicon or gallium arsenide. For RF amplifiers, obtaining good efficiency while meeting the required linearity specifications has always been a difficult challenge. GaN ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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