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PowerPoint-presentasjon
PowerPoint-presentasjon

... make Non Punch Through (NPT) IGBTs in the 600V range, with a lightly doped collector. This new IGBT technology is tested and compared with other competitive transistor technologies. The case study of the Zero Voltage Switching (ZVS) Buck Converter is performed because this topology until now has fav ...
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Impurity measurements in semiconductor materials
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... beam line detection system provides momentum/ charge (mv=q) and energy/charge (E=q) discrimination and total energy detection for elemental identification and quantification. Since the ions are at MeV energies, nuclear particle detectors or ionization chambers ensure 100% detection efficiency. The TEAMS ...
AN4858, Inductive Switching for Dual 24 and 36 V High
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... switching of the capacitor. Thus dynamic power consumption reduced, because the main source of dynamic power consumption is capacitance switching. Leakage current occurs due to unnecessary flow of current between the drain and the source of the transistor. This leakage current can be avoided by the ...
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... 35MHz are not popular and tend to be expensive and fragile. Packaged clock oscillators cost considerably more than a crystal so, for some applications, using a 3rd overtone (3rd OT) crystal may be a sensible choice. While the current trend is to incorporate PLL frequency multiplication into the DSP, ...
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P.I. Hsu, R. Bhattacharya, H. Gleskova, M. Huang, Z. Xi, Z. Suo, S. Wagner, and J.C. Sturm, "Thin-Film Transistor Circuits on Large-Area Spherical Surfaces," Appl. Phys. Lett. 81, pp. 1723-1725 (2002).
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... Deformation raised the average mobility 共of five devices tested兲 from 0.39 to 0.42 cm2 /V s 共an increase of ⬃7.7%兲, and reduced the average threshold voltage from 2.1 to 1.6 V. The gate currents remained below 1⫻10⫺11 A (⬍2 ⫻10⫺13 A/ ␮ m2 ). A decrease in the threshold voltage from 3.5 to 2.6 V 共ave ...
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Thin-film transistor circuits on large-area spherical surfaces J. C. Sturm

... Deformation raised the average mobility 共of five devices tested兲 from 0.39 to 0.42 cm2 /V s 共an increase of ⬃7.7%兲, and reduced the average threshold voltage from 2.1 to 1.6 V. The gate currents remained below 1⫻10⫺11 A (⬍2 ⫻10⫺13 A/ ␮ m2 ). A decrease in the threshold voltage from 3.5 to 2.6 V 共ave ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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