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Electronic materials and components
Electronic materials and components

Time - Weebly
Time - Weebly

DATA  SHEET PMBD6100 High-speed double diode
DATA SHEET PMBD6100 High-speed double diode

... All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No ...
APX4558  DUAL CHANNEL LOW NOISE GENERAL PURPOSE OPERATIONAL AMPLIFIER
APX4558 DUAL CHANNEL LOW NOISE GENERAL PURPOSE OPERATIONAL AMPLIFIER

... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
Presentation on Zener Diode.
Presentation on Zener Diode.

... The tunnel diode has negative resistance. It will actually conduct well with low forward bias. With further increases in bias it reaches the negative resistance range where current will actually go down. This is achieved by heavilydoped p and n materials that creates a very thin depletion region. ...
Polyimide-Planarized Vertical-Cavity Surface-Emitting Lasers With 17.0-GHz Bandwidth , Student Member, IEEE
Polyimide-Planarized Vertical-Cavity Surface-Emitting Lasers With 17.0-GHz Bandwidth , Student Member, IEEE

... mesa implantation [8], and semiinsulating substrates. These approaches add complexity such as the need for implantation or deep etches completely through a 10- m epitaxial stack. This letter presents work on low capacitance VCSELs with modulation bandwidths of 17.0 GHz based on a simplified robust p ...
PE4251
PE4251

... customers of the intended changes by issuing a CNF (Customer Notification Form). Document No. 70-0255-02 │ www.psemi.com ...
RF GaAs Solutions - NXP Semiconductors
RF GaAs Solutions - NXP Semiconductors

... Freescale’s GaAs MMIC portfolio offers products utilizing enhancement mode pHEMT (E-pHEMT), HFET and InGaP HBT device technologies. The E-pHEMT and HFET devices offer higher OIP3 relative to HBT devices biased at the same current. This enables system designers to achieve excellent linearity with low ...
IOSR Journal of Applied Physics (IOSR-JAP)
IOSR Journal of Applied Physics (IOSR-JAP)

... Potential applications of NLO materials in the fields of communication and electronics have recently developed an unquenchable thirst among the researchers to grow novel NLO single crystals with highly desired properties. Eventhough organic materials have high degree of delocalization and more optic ...
PAM3116 Description Pin Assignments
PAM3116 Description Pin Assignments

... Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use o ...
J. Phys. Chem. C - Photochemical Dynamics Group
J. Phys. Chem. C - Photochemical Dynamics Group

... us to revisit this characteristically unstable semiconductor in order to improve its photoelectrochemical response in aqueous electrolytes, with the aim of employing this ultra low-cost material for solar fuel production. Several studies on Cu2O electrodeposition,27−31 which is an attractive, robust ...
FMS6141 Low-Cost, Single-Channel 4 -Order Standard Definition Video Filter Driver
FMS6141 Low-Cost, Single-Channel 4 -Order Standard Definition Video Filter Driver

... ICH = ICC + (VO/RL) VIN = RMS value of input signal ICC = 7mA ...
PAM2319 Description Pin Assignments
PAM2319 Description Pin Assignments

... excellent stability and transient response. To ensure the longest battery life in portable applications, the PAM2319 provides a powersaving Pulse-Skipping Modulation (PSM) mode to reduce quiescent current under light load operation. The PAM2319 supports a range of input voltages from 2.7V to 5.5V, a ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)

... single-walled CNT can be either metallic or semiconducting. Parallel semiconducting CNTs are grown or transferred to a substrate of CNTFET. A typical structure of a MOSFET-like CNTFET device is illustrated in Fig.1. The CNT channel region is undoped, while the other regions are heavily doped, thus a ...
FSEZ1016A Primary-Side-Regulation PWM Integrated Power MOSFET FSEZ10 16A
FSEZ1016A Primary-Side-Regulation PWM Integrated Power MOSFET FSEZ10 16A

... Supply. The power supply pin. IC operating current and MOSFET driving current are supplied using this pin. This pin is connected to an external VDD capacitor of typically 10µF. The threshold voltages for startup and turn-off are 16V and 5V, respectively. The operating current is lower than 5mA. No c ...
JFET-Input Operational Amplifier (Rev. C)
JFET-Input Operational Amplifier (Rev. C)

... Supply voltage, VCC + . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Supply voltage, VCC – . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
EB21805808
EB21805808

... edition, further scaling down has faced serious limits related to fabrication technology and device performances as the critical dimension shrunk down to sub-22 nm range [1]. The limits involve electron tunneling through short channels and thin insulator films, the associated leakage currents, passi ...
Class 2 updated Sep 30
Class 2 updated Sep 30

... The principal component of glass, cement, ceramics, most semiconductor devices, and silicones, the latter a plastic substance often confused with silicon. Reacts with halogens and dilute alkalis, but most acids do not affect it (except for a combination of nitric acid and hydrofluoric acid). One of ...
And how to build one
And how to build one

Mechanism of charge generation and photovoltaic effects G. D.
Mechanism of charge generation and photovoltaic effects G. D.

... two basic processes: injection of the charge carriers from electrodes into organic semiconductor and vice versa and transport of the charge carriers in the bulk of film. Steady state current is determined by the applied electric field, height of the injection barrier, i.e. difference between electro ...
DATA  SHEET BAS116 Low-leakage diode
DATA SHEET BAS116 Low-leakage diode

... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
AP65402 - Diodes Incorporated
AP65402 - Diodes Incorporated

DIP
DIP

... Small Scale Integration is a term used in electronic chip manufacturing industry. Small Scale integration is a process of making IC with fewer than 100 transistors. These are the types of integrated circuits developed by manufactures in early days containing only a few transistors. Compared with SSI ...
BDTIC TLF50211EL 2.2MHz Buck Converter 5V, 500mA, with Enable and Low Quiescent...
BDTIC TLF50211EL 2.2MHz Buck Converter 5V, 500mA, with Enable and Low Quiescent...

... Product Brief ...
Silvaco Assignment #1 We will have 4 Silvaco examples to analyze
Silvaco Assignment #1 We will have 4 Silvaco examples to analyze

... stop implant is performed before the oxidation. Following the mask removal, a gate oxide is grown. Then a channel implant is done before poly deposition. The gate and substrate electrodes are defined at the end of the process sequence. Only these two electrodes are present in this 2D section. The so ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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