Generic Stress Factors and De-rating
... Electronic components fail during design, manufacturing, and field usage of equipment for various reasons. The nature of the failures of components could be classified as either mechanical or chemical [1]. The coil ends of electromagnetic ...
... Electronic components fail during design, manufacturing, and field usage of equipment for various reasons. The nature of the failures of components could be classified as either mechanical or chemical [1]. The coil ends of electromagnetic ...
AP8801 500mA LED STEP-DOWN CONVERTER Description
... The AP8801 has by default open LED protection. If the LEDs should become open circuit the AP8801 will stop oscillating; the SET pin will rise to VIN and the SW pin will then fall to GND. No excessive voltages will be seen by the AP8801. If the LEDs should become shorted together the AP8802H will con ...
... The AP8801 has by default open LED protection. If the LEDs should become open circuit the AP8801 will stop oscillating; the SET pin will rise to VIN and the SW pin will then fall to GND. No excessive voltages will be seen by the AP8801. If the LEDs should become shorted together the AP8802H will con ...
FSB70250 Motion SPM 7 Series ®
... 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 7 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 2. tON and tOFF include the p ...
... 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 7 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 2. tON and tOFF include the p ...
180SS-US-6XX Instructions R4
... implied, including the implied warranty or condition of quality, merchantability or fitness for a particular purpose, and such implied warranties, if any, are limited in duration to the term of this warranty. Some states do not allow limitations on how long an implied warranty lasts, so the above li ...
... implied, including the implied warranty or condition of quality, merchantability or fitness for a particular purpose, and such implied warranties, if any, are limited in duration to the term of this warranty. Some states do not allow limitations on how long an implied warranty lasts, so the above li ...
Power MOSFET Models Including Quasi-Saturation Effect
... Fig. 3 shows the simulated drain current results obtained with the standard power MOSFET model in comparison to the measurements. The standard power MOSFET model cannot simulate the high gate bias conditions. On the other hand, Fig. 5 shows the simulated, with the proposed model, and the measured ou ...
... Fig. 3 shows the simulated drain current results obtained with the standard power MOSFET model in comparison to the measurements. The standard power MOSFET model cannot simulate the high gate bias conditions. On the other hand, Fig. 5 shows the simulated, with the proposed model, and the measured ou ...
FSB70625 Motion SPM 7 Series ®
... 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 7 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 2. tON and tOFF include the p ...
... 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 7 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 2. tON and tOFF include the p ...
AL8806Q Description Pin Assignments
... LED current can be adjusted digitally, by applying a low frequency Pulse Width Modulated (PWM) logic signal to the CTRL pin to turn the device on and off. This will produce an average output current proportional to the duty cycle of the control signal. In particular, a PWM signal with a max resoluti ...
... LED current can be adjusted digitally, by applying a low frequency Pulse Width Modulated (PWM) logic signal to the CTRL pin to turn the device on and off. This will produce an average output current proportional to the duty cycle of the control signal. In particular, a PWM signal with a max resoluti ...
FSGM0565RB Green-Mode Fairchild Power Switch (FPS™) FSGM
... comparator (VFB*), as shown in Figure 18. Assuming that the 210μA current source flows only through the internal resistor (3R + R =11.6kΩ), the cathode voltage of diode D2 is about 2.4V. Since D1 is blocked when the feedback voltage (VFB) exceeds 2.4V, the maximum voltage of the cathode of D2 is cla ...
... comparator (VFB*), as shown in Figure 18. Assuming that the 210μA current source flows only through the internal resistor (3R + R =11.6kΩ), the cathode voltage of diode D2 is about 2.4V. Since D1 is blocked when the feedback voltage (VFB) exceeds 2.4V, the maximum voltage of the cathode of D2 is cla ...
Electromagnetic Transients Simulation Models for Accurate
... represent the current and voltage variations are very important; these functions should not only follow the desired variations within the applicable region, but also facilitate the analytical integration of the voltage-current product to arrive at the formula for Wrec; and be amenable to extraction ...
... represent the current and voltage variations are very important; these functions should not only follow the desired variations within the applicable region, but also facilitate the analytical integration of the voltage-current product to arrive at the formula for Wrec; and be amenable to extraction ...
PDF w - Research Laboratory of Electronics
... 1090 °C in inert environment,21 and a surface free of dangling bonds. On the other hand, the weak interlayer Van der Waal’s force allows single- or few-layer MoS2 thin films to be created through micromechanical cleavage technique22 and through anisotropic 2D growth by chemical vapor deposition.23,24 ...
... 1090 °C in inert environment,21 and a surface free of dangling bonds. On the other hand, the weak interlayer Van der Waal’s force allows single- or few-layer MoS2 thin films to be created through micromechanical cleavage technique22 and through anisotropic 2D growth by chemical vapor deposition.23,24 ...
FEBFL7701_L31H008A 7.8 W LED Ballast Using FL7701 Featured Fairchild Product:
... Replace components on the Evaluation Board only with those parts shown on the parts list (or Bill of Materials) in the Users’ Guide. Contact an authorized Fairchild representative with any questions. This board is intended to be used by certified professionals, in a lab environment, following proper ...
... Replace components on the Evaluation Board only with those parts shown on the parts list (or Bill of Materials) in the Users’ Guide. Contact an authorized Fairchild representative with any questions. This board is intended to be used by certified professionals, in a lab environment, following proper ...
Tunable supercurrent in superconductor/normal metal
... Thus, a possible way to influence the total supercurrent in a SNS junction is to change the electron energydistribution function f (E). This is done by using a sample geometry in which the normal region of the SNS junction is also coupled to two large electron reservoirs (see Figs 2 and 5). By apply ...
... Thus, a possible way to influence the total supercurrent in a SNS junction is to change the electron energydistribution function f (E). This is done by using a sample geometry in which the normal region of the SNS junction is also coupled to two large electron reservoirs (see Figs 2 and 5). By apply ...
AP1520
... the duty ratio linearly from 0 up to 100%. This converter also contains an error amplifier circuit. An enable function, an over current protection and a short circuit protection are built inside, and when OCP or SCP happens, the operation frequency will be reduced from 300kHz to 30kHz. Also, an inte ...
... the duty ratio linearly from 0 up to 100%. This converter also contains an error amplifier circuit. An enable function, an over current protection and a short circuit protection are built inside, and when OCP or SCP happens, the operation frequency will be reduced from 300kHz to 30kHz. Also, an inte ...
A Static Model for Electrolyte-Gated Organic Field-Effect Transistors Linköping University Post Print
... P(VPA-AA), the overall capacitance is actually limited by the smallest electric double layer located at the polyelectrolyte -semiconductor interface. At this interface, the electrolyte is divided into two zones: a compact layer constituted of the first monolayer of polyanions in contact with the sem ...
... P(VPA-AA), the overall capacitance is actually limited by the smallest electric double layer located at the polyelectrolyte -semiconductor interface. At this interface, the electrolyte is divided into two zones: a compact layer constituted of the first monolayer of polyanions in contact with the sem ...
a = b = c
... through by a common number in order to simplify them by, for example, removing a common factor. This operation of multiplication simply generates a parallel plane which is at a different distance from the origin of the particular unit cell being considered. e.g. (200) is transformed to (100) by divi ...
... through by a common number in order to simplify them by, for example, removing a common factor. This operation of multiplication simply generates a parallel plane which is at a different distance from the origin of the particular unit cell being considered. e.g. (200) is transformed to (100) by divi ...
DATA SHEET PMBD7100 High-speed double diode
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result i ...
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result i ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.