AP5101 1.5A Step-Down Converter with 1.4MHz Switching Frequency
... The AP5101 is a current mode step-down converter with a built-in power MOSFET to enable smallest solution size power conversion. ...
... The AP5101 is a current mode step-down converter with a built-in power MOSFET to enable smallest solution size power conversion. ...
IOSR Journal of Applied Physics (IOSR-JAP)
... where G is called the memductance (for memory conductance). Properties of memristors Memristive devices are passive for all R>0. A memristive system can‘t store energy, like a capacitor or an inductor. This is quite obvious from the fact that V= 0 whenever I = 0 , and vice versa. The most important ...
... where G is called the memductance (for memory conductance). Properties of memristors Memristive devices are passive for all R>0. A memristive system can‘t store energy, like a capacitor or an inductor. This is quite obvious from the fact that V= 0 whenever I = 0 , and vice versa. The most important ...
5V and 3.3V Hot Swap Controller Reference Design
... LogiBuilder source is distributed across the three different interfaces; sequencer, exceptions, and supervisory logic as shown in Listings 1-3. The main sequence is responsible for startup and shutdown by monitoring the VMONs and timers. The Input and Board VMONs use the Window Mode to provide an OK ...
... LogiBuilder source is distributed across the three different interfaces; sequencer, exceptions, and supervisory logic as shown in Listings 1-3. The main sequence is responsible for startup and shutdown by monitoring the VMONs and timers. The Input and Board VMONs use the Window Mode to provide an OK ...
AP8800A Description Pin Assignments
... supply. A minimum value of 1μF is acceptable if the DC input source is close to the device, but higher values will improve performance at lower input voltages, especially when the source impedance is high. The input capacitor should be placed as close as possible to the IC. For AC input sources a bi ...
... supply. A minimum value of 1μF is acceptable if the DC input source is close to the device, but higher values will improve performance at lower input voltages, especially when the source impedance is high. The input capacitor should be placed as close as possible to the IC. For AC input sources a bi ...
Analogue Electronic Circuit - Federal University Oye
... Tell the operational differences between the Common-Emitter amplifier, CommonBase amplifier, and Common-Collector amplifier as well as identify the similarities between the operations of the following pairs of amplifiers: Common-Emitter & Common Source amplifiers, Common-Collector and Common-Drain ...
... Tell the operational differences between the Common-Emitter amplifier, CommonBase amplifier, and Common-Collector amplifier as well as identify the similarities between the operations of the following pairs of amplifiers: Common-Emitter & Common Source amplifiers, Common-Collector and Common-Drain ...
AP2552/ AP2553/ AP2552A/ AP2553A Description Pin Assignments
... An internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an overcurrent condition is detected, AP2552/53 maintains a constant output current and reduces the output voltage acco ...
... An internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an overcurrent condition is detected, AP2552/53 maintains a constant output current and reduces the output voltage acco ...
BY34462465
... During the evaluation phase; there are two possibilities for the dynamic-node voltage. If the input combination is one that corresponds to a low output, the dynamic-node voltage must be maintained at the supply voltage, VDD. On the other hand, if the input combination is one that corresponds to a hi ...
... During the evaluation phase; there are two possibilities for the dynamic-node voltage. If the input combination is one that corresponds to a low output, the dynamic-node voltage must be maintained at the supply voltage, VDD. On the other hand, if the input combination is one that corresponds to a hi ...
Latest Technology PT IGBTs vs. Power MOSFETs
... MOSFETs and IGBTs to minimize the turn-on switching loss. Just as for power MOSFETs, a negative voltage gate drive is not necessary for turn-off. Although initial turn-off may be sped up, a negative gate drive does not affect the IGBT tail current. The main reason for using a negative gate drive is ...
... MOSFETs and IGBTs to minimize the turn-on switching loss. Just as for power MOSFETs, a negative voltage gate drive is not necessary for turn-off. Although initial turn-off may be sped up, a negative gate drive does not affect the IGBT tail current. The main reason for using a negative gate drive is ...
Hot Socketing and Power-On Reset in Stratix IV Devices
... When power is applied to a Stratix IV device, a POR event occurs if the power supply reaches the recommended operating range within the maximum power supply ramp time (tR AMP). If tRAMP is not met, the device I/O pins and programming registers remain tri-stated, during which device configuration cou ...
... When power is applied to a Stratix IV device, a POR event occurs if the power supply reaches the recommended operating range within the maximum power supply ramp time (tR AMP). If tRAMP is not met, the device I/O pins and programming registers remain tri-stated, during which device configuration cou ...
A high performance 0.18μm BiCMOS technology
... The cross section view of the SiGe HBT and simplified fabrication process are shown in Fig. 1and Fig. 2, respectively. The SiGe HBTs have a single poly-Si structure and are fabricated after CMOS module. First, a (100) p type Si substrate receives an arsenic implant to form a buried n+ collector laye ...
... The cross section view of the SiGe HBT and simplified fabrication process are shown in Fig. 1and Fig. 2, respectively. The SiGe HBTs have a single poly-Si structure and are fabricated after CMOS module. First, a (100) p type Si substrate receives an arsenic implant to form a buried n+ collector laye ...
Nanotube electronics and optoelectronics
... of tunneling and thermionic emission in the injection of carriers at the contacts, the dependence of the on-current of the transistor on CNT diameter (i.e. SB) is very strong (exponential), as shown in Fig. 444. It is this strong dependence that necessitates the precise control of the CNT diameter i ...
... of tunneling and thermionic emission in the injection of carriers at the contacts, the dependence of the on-current of the transistor on CNT diameter (i.e. SB) is very strong (exponential), as shown in Fig. 444. It is this strong dependence that necessitates the precise control of the CNT diameter i ...
FSD176MRT Green-Mode Fairchild Power Switch (FPS™) Features
... 3. Feedback Control: This device employs currentmode control, as shown in Figure 18. An opto-coupler (such as the FOD817) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the RSENSE resistor makes it ...
... 3. Feedback Control: This device employs currentmode control, as shown in Figure 18. An opto-coupler (such as the FOD817) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the RSENSE resistor makes it ...
AP5727 BIAS POWER SUPPLY FOR OLED SUB DISPLAY AND TFT-LED
... because they retain their capacitance over wider voltage and temperature ranges than other types such as X5R and X7R. A 4.7μF input capacitor and a 10μF output capacitor are sufficient for most AP5727 applications. ...
... because they retain their capacitance over wider voltage and temperature ranges than other types such as X5R and X7R. A 4.7μF input capacitor and a 10μF output capacitor are sufficient for most AP5727 applications. ...
Latch-Up,ESD,And Other Phenomena
... semiconductor manufacturer, it contains considerably more transistors and diodes than are necessary for the basic function. The additional components, such as the clamping diodes on the inputs and outputs of logic circuits, are required to ensure reliable operation under particular conditions. These ...
... semiconductor manufacturer, it contains considerably more transistors and diodes than are necessary for the basic function. The additional components, such as the clamping diodes on the inputs and outputs of logic circuits, are required to ensure reliable operation under particular conditions. These ...
Liquid Crystals
... Real name 4-cyano-4-n-pentylbiphenyl Crystalline solid below 18°C Isotropic liquid above 36°C ...
... Real name 4-cyano-4-n-pentylbiphenyl Crystalline solid below 18°C Isotropic liquid above 36°C ...
8 – The Power MOSFET 2
... The characteristic curves in Fig. 4.6b show that there are three distinct regions of operation labeled as triode region, saturation region, and cut-off-region. When used as a switching device, only triode and cut-off regions are used, whereas, when it is used as an amplifier, the MOSFET must operate ...
... The characteristic curves in Fig. 4.6b show that there are three distinct regions of operation labeled as triode region, saturation region, and cut-off-region. When used as a switching device, only triode and cut-off regions are used, whereas, when it is used as an amplifier, the MOSFET must operate ...
AP7333-12SRG-7 Datasheet
... to cool down. When the junction temperature reduces to approximately +125°C the output circuitry is enabled again. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the heat dissipation of the regulat ...
... to cool down. When the junction temperature reduces to approximately +125°C the output circuitry is enabled again. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the heat dissipation of the regulat ...
AP1533
... prevents overshoot at startup. An enable function, an over current protect function and a short circuit protect function are built inside, and when OCP or SCP happens, the operation frequency will be reduced from 300KHz to 50KHz. Also, an internal compensation block is built in to minimum external c ...
... prevents overshoot at startup. An enable function, an over current protect function and a short circuit protect function are built inside, and when OCP or SCP happens, the operation frequency will be reduced from 300KHz to 50KHz. Also, an internal compensation block is built in to minimum external c ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.