IEEE NANO 2007 Paper
... resistance between its two states (low resistance in parallel P state and high resistance in anti-parallel AP state). The ratio between these two resistance values, named Tunnel MagnetoResistance (TMR) [2] is an important factor for design of the reading circuit. TMR as high as 230% has been obtaine ...
... resistance between its two states (low resistance in parallel P state and high resistance in anti-parallel AP state). The ratio between these two resistance values, named Tunnel MagnetoResistance (TMR) [2] is an important factor for design of the reading circuit. TMR as high as 230% has been obtaine ...
DATA SHEET BF620; BF622 NPN high-voltage transistors
... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
Power Amplifiers - University of Michigan
... There is not a ‘universal’ amplifier suitable for all applications. Design in general, and amplifier design in particular, involves tradeoffs between different aspects of amplifier operation, emphasizing performance in some of these aspects at the expense of performance in others. These notes are an ...
... There is not a ‘universal’ amplifier suitable for all applications. Design in general, and amplifier design in particular, involves tradeoffs between different aspects of amplifier operation, emphasizing performance in some of these aspects at the expense of performance in others. These notes are an ...
Features Pin Configuration Description Pin Description
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
Low Capacitance ESD Protection for High Speed Video Interface
... Figure 6. Diagram of ESD Clamping Voltage Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. ...
... Figure 6. Diagram of ESD Clamping Voltage Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. ...
Data sheet - NXP Semiconductors
... Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of ...
... Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of ...
Application Note 7534 A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs Abstract
... Many power MOSFET models available today are based on an ideal lateral MOSFET device. They offer poor correlation between simulated and actual circuit performance in several areas. They have low and high current inaccuracies that could mislead power circuit designers. This situation is further compl ...
... Many power MOSFET models available today are based on an ideal lateral MOSFET device. They offer poor correlation between simulated and actual circuit performance in several areas. They have low and high current inaccuracies that could mislead power circuit designers. This situation is further compl ...
FMS6364A Four-Channel Standard
... Since the interior of systems such as set-top boxes, TVs, and DVD players are at +70ºC; consideration must be given to providing an adequate heat sink for the device package for maximum heat dissipation. When designing a system board, determine how much power each device dissipates. Ensure that devi ...
... Since the interior of systems such as set-top boxes, TVs, and DVD players are at +70ºC; consideration must be given to providing an adequate heat sink for the device package for maximum heat dissipation. When designing a system board, determine how much power each device dissipates. Ensure that devi ...
KV5x High Speed ADC Design Reference Manual
... liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in d ...
... liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in d ...
AP7335A 300mA, LOW QUIESCENT CURRENT, FAST TRANSIENT LOW DROPOUT LINEAR REGULATOR
... indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be ...
... indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be ...
Oregon_SOI3D
... • First detector test with electronics integrated with float zone silicon I believe that we would be ready to proceed to full-sized fully functional devices in either SOI or 3D. Both the circuit design and chip/sensor ...
... • First detector test with electronics integrated with float zone silicon I believe that we would be ready to proceed to full-sized fully functional devices in either SOI or 3D. Both the circuit design and chip/sensor ...
diodes applications special purpose diodes
... Audio Oscillator and CRO. THEORY Clampers are circuits which change the reference voltage of an ac waveform. Alternatively, clampers are also said to be those circuits which add a dc level to an ac waveform. The essential components are a capacitor, a diode and a resistor. Positive Clamper: Consider ...
... Audio Oscillator and CRO. THEORY Clampers are circuits which change the reference voltage of an ac waveform. Alternatively, clampers are also said to be those circuits which add a dc level to an ac waveform. The essential components are a capacitor, a diode and a resistor. Positive Clamper: Consider ...
Reversible Current Power Supply for Fast-Field
... have maximum precision, in terms of value, and also regarding the time duration of the polarization and detection pulses, the devices used are switching electronic systems, and a magnet, into which the sample is placed. The power source should provide the magnet with current values proportional to t ...
... have maximum precision, in terms of value, and also regarding the time duration of the polarization and detection pulses, the devices used are switching electronic systems, and a magnet, into which the sample is placed. The power source should provide the magnet with current values proportional to t ...
FAN5341 Series Boost LED Driver with Integrated Schottky Diode and
... The boost regulator employs a cycle-by-cycle peak inductor current limit of ~750mA. ...
... The boost regulator employs a cycle-by-cycle peak inductor current limit of ~750mA. ...
EMI EMC Considerations for Energy Meters Application Note
... LCD interfaces are susceptible to EMI because of the LCD glass capacitance and the increased number of bias voltages. The voltage difference between back planes and front planes becomes more prone to noise and produces incorrect results. Segmented LCDs may have 20 to 30 lines running in parallel fro ...
... LCD interfaces are susceptible to EMI because of the LCD glass capacitance and the increased number of bias voltages. The voltage difference between back planes and front planes becomes more prone to noise and produces incorrect results. Segmented LCDs may have 20 to 30 lines running in parallel fro ...
PDF
... exhibits a high defect density, and remains incompatible with CMOS processing. Silicon, with its native oxide interface, enables a very high index contrast that greatly simplifies WDM multiplexing with compact microring-resonator-based filters. Further, whether silicon photonics are directly integra ...
... exhibits a high defect density, and remains incompatible with CMOS processing. Silicon, with its native oxide interface, enables a very high index contrast that greatly simplifies WDM multiplexing with compact microring-resonator-based filters. Further, whether silicon photonics are directly integra ...
Evaluates: MAX1966/MAX1967 MAX1966 Evaluation Kit General Description Features
... The MAX1966 evaluation kit (EV kit) is a fully assembled and tested circuit board that contains two independent step-down DC-to-DC converter circuits. The MAX1966 circuit is optimized for a 3V to 5.5V input range and delivers 1.8V at 2A. The MAX1967 circuit is optimized for a 4.9V to 20V input range ...
... The MAX1966 evaluation kit (EV kit) is a fully assembled and tested circuit board that contains two independent step-down DC-to-DC converter circuits. The MAX1966 circuit is optimized for a 3V to 5.5V input range and delivers 1.8V at 2A. The MAX1967 circuit is optimized for a 4.9V to 20V input range ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.