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PAM2320 Description Pin Assignments
PAM2320 Description Pin Assignments

... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
A Zone-Casting Technique for Device Fabrication of Field
A Zone-Casting Technique for Device Fabrication of Field

... Ingo Lieberwirth, Ute Kolb, Adam Tracz, Henning Sirringhaus, Tadeusz Pakula, and Klaus Müllen* Organic semiconductors have attracted considerable interest over the last decade due to an immense improvement in the performance of electronic devices based on these materials. This attention has mainly b ...
Electrical Measurements On Nanoscale Materials
Electrical Measurements On Nanoscale Materials

... that macroscopic device can carry (unless they are super-conducting). This means that when a device is interrogated, the magnitude of a current stimulus must be carefully controlled. 2. Nanoscopic particles will not hold off as much voltage from adjacent devices as a conventional electronic compone ...
Organic Thin-Film Transistor-Driven Polymer
Organic Thin-Film Transistor-Driven Polymer

... 关DOI: 10.1063/1.1448659兴 ...
FODM611 High Noise Immunity, 5V, 10Mbit/sec Logic Gate Output (Open Collector) Optocoupler
FODM611 High Noise Immunity, 5V, 10Mbit/sec Logic Gate Output (Open Collector) Optocoupler

... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
Journal of Hazardous Materials
Journal of Hazardous Materials

... it has several drawbacks: (1) poor resolution at low total dose levels; (2) a large static gate bias requirement during exposure to reduce response fading; (3) significant temperature sensitivity; and (4) once radiation activated, it cannot be recalibrated to its initial condition. All the above-ment ...
IRF510
IRF510

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FSGM0465R Green-Mode Fairchild Power Switch (FPS™)
FSGM0465R Green-Mode Fairchild Power Switch (FPS™)

... Figure 19. Auto-Restart Protection Waveforms 4.1 Overload Protection (OLP): Overload is defined as the load current exceeding its normal level due to an unexpected abnormal event. In this situation, the protection circuit should trigger to protect the SMPS. However, even when the SMPS is in normal o ...
FIGURE 1-1 Figure text here.
FIGURE 1-1 Figure text here.

...  A voltage follower is used as a buffer between a highresistance source and a low-resistance load.  Op-amps can be used for summing and/or subtracting scaled signals in inverting and noninverting modes.  Controlled sources can be implemented with operational amplifiers and can be configured for f ...
Piecewise Linear Model and AC Analysis
Piecewise Linear Model and AC Analysis

Electronic Skin
Electronic Skin

... arms. One challenge for making these devices is that the transistors (and the semiconductors in them) that amplify weak signals must be flexible in order to act like skin. The ability of transistors to amplify signals, their gain depends on the mobility of the charge carriers in their semiconductor ...
Smart troubleshooting pinpoints rectifier failures
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... break down voltage, which the diode is not specifically designed to do, causing failure. “Now reverse the DMM leads and note the DMM reading. If the meter reads a high resistance value and no tone in either direction, you know that that the diode is bad. ...
Low Temperature SCM/AFM
Low Temperature SCM/AFM

So far we have talked about production primarily of gamma rays
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Parallel and Series Circuits - Science Education at Jefferson Lab
Parallel and Series Circuits - Science Education at Jefferson Lab

... A small box is constructed and fitted with four light emitting diodes (LED) and four toggle switches. The way in which the LEDs react to the switches depends on how the components are wired. Ideally, several of these devices would be constructed. While all of the devices would look identical, they c ...
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Chapter 2 : Operating Principles of MOS Transistors
Chapter 2 : Operating Principles of MOS Transistors

... 2.2.However, as a voltage, positive relative to the source and the substrate, is applied to the gate, an electric field is produced across the p-type substrate, This electric field attracts the electrons toward the gate and repels the holes. If the gate voltage is adequately high, the region under t ...
17524 Sample Question Paper  Scheme – G
17524 Sample Question Paper Scheme – G

... b) Draw a sketch of single turn elementary alternator and name the parts. Also state the rule which decides the direction of current in the conductor. c) State the difference between PNP and NPN transistor. Give their symbols. d) Draw standard symbols of i) LDR ii) Multi-Cell Battery iii) Dual Filam ...
PAM2306D Description Pin Assignments
PAM2306D Description Pin Assignments

... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
PAM2306 Description Features Pin Assignments Applications
PAM2306 Description Features Pin Assignments Applications

... excellent stability and transient response. To ensure the longest battery life in portable applications, the PAM2306 provides a power saving Pulse-Skipping Modulation (PSM) mode to reduce quiescent current under light load operation. The PAM2306 supports a range of input voltages from 2.5V to 5.5V, ...
DS1080CL Spread-Spectrum Crystal Multiplier General Description Features
DS1080CL Spread-Spectrum Crystal Multiplier General Description Features

... Spread-Spectrum Crystal Multiplier Crystal Selection The DS1080CL requires a parallel resonating crystal operating in the fundamental mode, with an ESR of less than 90Ω. The crystal should be placed very close to the device to minimize excessive loading due to parasitic capacitances. ...
LM123/LM323A/LM323 3-Amp, 5-Volt Positive Regulator
LM123/LM323A/LM323 3-Amp, 5-Volt Positive Regulator

... LM323. Parameters with tightened specifications include output voltage tolerance, line regulation, and load regulation. The 3 amp regulator is virtually blowout proof. Current limiting, power limiting, and thermal shutdown provide the same high level of reliability obtained with these techniques in ...
IOSR Journal of Applied Physics (IOSR-JAP)
IOSR Journal of Applied Physics (IOSR-JAP)

... functional groups in the synthesized compound. FTIR spectrum was recorded using spectrophotometer by kBr pellet technique in the region 4000-500 cm-1. For the organic molecule, the FTIR region has been divided into fractional group and fingerprint region. The fingerprint regions are those lying betw ...
Astable - godinweb
Astable - godinweb

... ◊ Disadvantages: ◊ Unstable, as the frequency will vary with temperature variations. ◊ Difficult to predict values due to the range of Vt+ and Vt- between different gates, even within the same IC package. ...
Field Devices and Wiring
Field Devices and Wiring

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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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