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DATA  SHEET BAL74 High-speed diode
DATA SHEET BAL74 High-speed diode

... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
Photoresistor, LED, and Transistor
Photoresistor, LED, and Transistor

... upon it. Photoresistors are used to make light-sensitive devices, and are often made from cadmium sulfide (CdS). The resistance of a CdS photoresistor varies inversely to the amount of light incident upon it. In other words, its resistance will be higher at low light levels (in the dark) and lower a ...
ESD8104 - ESD Protection Diode
ESD8104 - ESD Protection Diode

ABSTRACT - 123SeminarsOnly.com
ABSTRACT - 123SeminarsOnly.com

... This surface mount polyfuse family of polymer of polymer based resettable fuses provides reliable over current protection for a wide range of products such as computer motherboards, USB hubs and ports, CD/DVD drives , digital cameras and battery packs. Each of these polyfuse series features low volt ...
Aluminum Nitride on Sapphire Films for Surface Acoustic Wave
Aluminum Nitride on Sapphire Films for Surface Acoustic Wave

... specific chemicals. A popular approach for achieving molecular selectivity with SAW devices entails the deposition of a chemically active coating on the piezoelectric surface. 7, The proper coating selectively adsorbs or reacts with the chemical of interest, producing a net change in mass loading an ...
In perfect harmony - with Infineon® Power Stacks
In perfect harmony - with Infineon® Power Stacks

... Ready for Infineon® Power Stacks? Infineon® Power Stacks with bipolar power semiconductors are used in most varied applications in a power range from a few kilowatts up to several megawatts. The modular portfolio of our System Line covers solutions with thyristors and diodes and is optimized to the ...
FSB50660SF, FSB50660SFT Motion SPM 5 SuperFET Series
FSB50660SF, FSB50660SFT Motion SPM 5 SuperFET Series

... 2. RC-coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM® 5 product and MCU are useful to prevent improper input signal caused by surge-noise. 3. The voltage-drop across R3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and ...
Current Integrators
Current Integrators

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5-Channel ESD Protection Array

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AP7313 - Diodes Incorporated
AP7313 - Diodes Incorporated

... to cool down. When the junction temperature reduces to approximately +125°C the output circuitry is enabled again. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the heat dissipation of the regulat ...
Investigation on structural, spectral, and thermal properties of L
Investigation on structural, spectral, and thermal properties of L

... Crystals are occupying a major part in the areas of modern technology involving lasers, sensors, infrared detectors, optical components, and electrical devices. Recently, there has been a significant advancement toward the investigation and growth of new type of noncentrosymmetric crystalline materi ...
LV_Power_MOSFET - Renesas E
LV_Power_MOSFET - Renesas E

... Two failure modes exist when MOSFETs are subjected to unclamped inductive switching, UIS. These two failure mechanisms are defined as either 1) the active Mode 1 or 2) the passive Mode 2. 1.The first, or active Mode 1, results when the avalanche current actively forces the parasitic bipolar transist ...
Description ZXGD3102T8
Description ZXGD3102T8

... configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET’s Gate pin. ...
FSQ0370RNA, FSQ0370RLA Green Mode Fairchild Power Switch (FPS™) FSQ0370RNA / FSQ0370RLA
FSQ0370RNA, FSQ0370RLA Green Mode Fairchild Power Switch (FPS™) FSQ0370RNA / FSQ0370RLA

... the SenseFET when the maximum PWM duty cycle is attained. If the output consumes more than this maximum power, the output voltage (VO) decreases below its nominal voltage. This reduces the current through the optocoupler LED, which also reduces the optocoupler transistor current, thus increasing the ...
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IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)

High Efficiency NPC Multilevel Converters using Super
High Efficiency NPC Multilevel Converters using Super

... including the ability to balance losses between power devices. However, they have greater complexity, requiring six switches per phase for a three-level converter and the diode-clamped variant is therefore considered in this paper. On the other hand, the focus of this paper is to devise a relatively ...
Efficient Power Conversion Corporation
Efficient Power Conversion Corporation

... http://epc-co.com/epc/documents/gerber-files/EPC9041%20Development%20Board%20Gerbers.zip Assembly Resources at: http://epc-co.com/epc/DesignSupport/AssemblyBasics.aspx Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein. Engin ...
Switched Reluctance Motors
Switched Reluctance Motors

... liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Freescale Semiconductor data sheets and/or specifications can a ...
FDMS3602S  PowerTrench Power Stage
FDMS3602S PowerTrench Power Stage

... 6. S2 pins should be connected to the GND plane with multiple vias for a low impedance grounding. Poor grounding can create a noise transient offset voltage level between S2 and driver ground. This could lead to faulty operation of the gate driver and MOSFET. 7. Use multiple vias on each copper area ...
EPC2101 Preliminary Datasheet
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... http://epc-co.com/epc/documents/gerber-files/EPC9037%20Development%20Board%20Gerbers.zip Assembly Resources at: http://epc-co.com/epc/DesignSupport/AssemblyBasics.aspx Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein. Engin ...
I. IONIZATION OF CESIUM AT SURFACES II. THE ENERGY
I. IONIZATION OF CESIUM AT SURFACES II. THE ENERGY

... in an energy-conversion diode, the ratio of the emitter temperature to the cesium temperature strongly influences the operating properties. If this ratio exceeds 3. 2, an ionrich sheath usually forms at the emitter surface. Electrons are accelerated in the plasma space by this injection potential. A ...
dangers associated with polarity reversal
dangers associated with polarity reversal

... appliances, reverse polarity will blow the device, destroy possibly the battery, set the power house ablaze and if not careful kill the operator. Solution to reversed poalrity Polarity results from the fact that an electrical circuit has a negative and a positive pole. Direct current (DC) flows in o ...
Silicon detectors for particle physics laboratory
Silicon detectors for particle physics laboratory

... A semiconductor is a solid whose electrical conductivity can be controlled by doping; adding impurities. It has an electrical resistivity between that of a conductor and insulator. The material is characterised by an energy band diagram with an energy gap between the conduction and valance bands of ...
Anomalous Electron Transport in Field-Effect
Anomalous Electron Transport in Field-Effect

... C≈1.15×10-8 F/cm2 is the 300-nm back-gate oxide capacitance. Using VGS = 10 V and L = 8 m, QL = 2kFL = 1.1 which is the same order of magnitude as 2. The high sensitivity of the channel current to the gate voltage is difficult to explain considering that the screening length D  ( kBT / nq 2 ...
Subcircuits
Subcircuits

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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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