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InSitu Reduction of Charge Noise in GaAs=Al xGa1АxAs Schottky
InSitu Reduction of Charge Noise in GaAs=Al xGa1АxAs Schottky

... dominated by a few active charge traps in the vicinity of the QPC. Via BC we can operate the device at lower VG , leading to systematically reduced noise levels, similar to the case when using Vtop . Around VG  0:4 V the noise level could not be lowered further. Again, the remaining noise is predo ...
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... sampled and held in U1 and U3. The sample and hold function is performed in order to keep input data constant during the conversion process. The stabilized signals coming out of U1 and U3 feed a higher output voltage to U2A than U2B, assuming that pressure is applied to the sensor. Therefore, the ra ...
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... Freescale’s embedded motion control series 3-Phase BLDC/PMSM Low Voltage Power Stage is an 8 V–50 V, 10 Amps, surface-mounted power stage. In combination with one of the embedded motion control series controller boards, it provides a software development platform that allows algorithms to be written ...
IGC28T65QE High Speed IGBT3 Chip
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... IGC39T65QE High Speed IGBT3 Chip Features:  650V Trench & Field Stop technology  high speed switching series third generation  low VCE(sat)  low EMI  low turn-off losses  positive temperature coefficient  qualified according to JEDEC for target applications ...
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... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
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... that is greater than the voltage present at the Vin pin. This flexibility makes the AP1186 ideal for applications where dual inputs are available such as a computer motherboard with an ATX style power supply that provides 5V and 3.3V to the board. One such application is the new graphic chip sets th ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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