InSitu Reduction of Charge Noise in GaAs=Al xGa1АxAs Schottky
... dominated by a few active charge traps in the vicinity of the QPC. Via BC we can operate the device at lower VG , leading to systematically reduced noise levels, similar to the case when using Vtop . Around VG 0:4 V the noise level could not be lowered further. Again, the remaining noise is predo ...
... dominated by a few active charge traps in the vicinity of the QPC. Via BC we can operate the device at lower VG , leading to systematically reduced noise levels, similar to the case when using Vtop . Around VG 0:4 V the noise level could not be lowered further. Again, the remaining noise is predo ...
AN1318 Interfacing Semiconductor Pressure Sensors
... sampled and held in U1 and U3. The sample and hold function is performed in order to keep input data constant during the conversion process. The stabilized signals coming out of U1 and U3 feed a higher output voltage to U2A than U2B, assuming that pressure is applied to the sensor. Therefore, the ra ...
... sampled and held in U1 and U3. The sample and hold function is performed in order to keep input data constant during the conversion process. The stabilized signals coming out of U1 and U3 feed a higher output voltage to U2A than U2B, assuming that pressure is applied to the sensor. Therefore, the ra ...
3-Phase BLDC/PMSM Low Voltage Power Stage User Manual
... Freescale’s embedded motion control series 3-Phase BLDC/PMSM Low Voltage Power Stage is an 8 V–50 V, 10 Amps, surface-mounted power stage. In combination with one of the embedded motion control series controller boards, it provides a software development platform that allows algorithms to be written ...
... Freescale’s embedded motion control series 3-Phase BLDC/PMSM Low Voltage Power Stage is an 8 V–50 V, 10 Amps, surface-mounted power stage. In combination with one of the embedded motion control series controller boards, it provides a software development platform that allows algorithms to be written ...
IGC28T65QE High Speed IGBT3 Chip
... IGC28T65QE High Speed IGBT3 Chip Features: 650V Trench & Field Stop technology high speed switching series third generation low VCE(sat) low EMI low turn-off losses positive temperature coefficient qualified according to JEDEC for target applications ...
... IGC28T65QE High Speed IGBT3 Chip Features: 650V Trench & Field Stop technology high speed switching series third generation low VCE(sat) low EMI low turn-off losses positive temperature coefficient qualified according to JEDEC for target applications ...
IGC39T65QE High Speed IGBT3 Chip
... IGC39T65QE High Speed IGBT3 Chip Features: 650V Trench & Field Stop technology high speed switching series third generation low VCE(sat) low EMI low turn-off losses positive temperature coefficient qualified according to JEDEC for target applications ...
... IGC39T65QE High Speed IGBT3 Chip Features: 650V Trench & Field Stop technology high speed switching series third generation low VCE(sat) low EMI low turn-off losses positive temperature coefficient qualified according to JEDEC for target applications ...
Review Article Review Article
... SiC single crystal is usually grown by sublimation (modified Lely method). There is a lotof remaining issues that should be solved. One is the technical problems of SiC single crystal growth process. And the other is the theoretical problem based on SiC physical properties. As the example of technic ...
... SiC single crystal is usually grown by sublimation (modified Lely method). There is a lotof remaining issues that should be solved. One is the technical problems of SiC single crystal growth process. And the other is the theoretical problem based on SiC physical properties. As the example of technic ...
Ageing Impact on a High Speed Voltage Comparator with Hysteresis
... Copyright © 2016 for the individual papers by the papers' authors. Copying permitted for private and academic purposes. This volume is published and copyrighted by its editors. ...
... Copyright © 2016 for the individual papers by the papers' authors. Copying permitted for private and academic purposes. This volume is published and copyrighted by its editors. ...
AP7333
... to cool down. When the junction temperature reduces to approximately +125°C the output circuitry is enabled again. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the heat dissipation of the regulat ...
... to cool down. When the junction temperature reduces to approximately +125°C the output circuitry is enabled again. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the heat dissipation of the regulat ...
PAM2307 Description Pin Assignments
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
Datasheet - Mouser Electronics
... or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal i ...
... or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal i ...
FPF2174 IntelliMAX™ Advanced Load Management Products FP F2
... voltage drop Schottky barrier rectifier and a zener clamp at the output. The integrated solution provides full protection to systems and loads which may encounter large current conditions in a very compact MLP 3x3 package. This device contain a 0.125 current-limited P-channel MOSFET which can operat ...
... voltage drop Schottky barrier rectifier and a zener clamp at the output. The integrated solution provides full protection to systems and loads which may encounter large current conditions in a very compact MLP 3x3 package. This device contain a 0.125 current-limited P-channel MOSFET which can operat ...
Tips and tricks for high-speed, high-voltage
... the specific application or power-converter architecture. Also, trade-offs should be evaluated for devices that require different approaches for gate-drive circuitry, controller parameters, and system-performance goals. Measuring the voltage waveforms on the drain, gate and source with sufficient ac ...
... the specific application or power-converter architecture. Also, trade-offs should be evaluated for devices that require different approaches for gate-drive circuitry, controller parameters, and system-performance goals. Measuring the voltage waveforms on the drain, gate and source with sufficient ac ...
API9221EV1 User Guide Issue 3
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
Datasheet - Diodes Incorporated
... 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in ...
... 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in ...
Silicon nitride biaxial pointing mirrors with stiffening ribs
... has become the dominant power and space consumer of fiber communication systems. All-optical switching methods will be developed to meet the demand for increased communication bandwidth. Micromechanical mirror systems are one method to obtain all-optical switching. The small nature of an optical fib ...
... has become the dominant power and space consumer of fiber communication systems. All-optical switching methods will be developed to meet the demand for increased communication bandwidth. Micromechanical mirror systems are one method to obtain all-optical switching. The small nature of an optical fib ...
1-Front-Abstract
... The third part deals with the fabrication and optimization of gate dielectrics. Here we have demonstrated organic field effect transistors (OFETs) with photo-patternable, solution processed, nanoparticle composite high-k gate dielectric layer. The dielectric layer consists of Barium Titanate (BT) n ...
... The third part deals with the fabrication and optimization of gate dielectrics. Here we have demonstrated organic field effect transistors (OFETs) with photo-patternable, solution processed, nanoparticle composite high-k gate dielectric layer. The dielectric layer consists of Barium Titanate (BT) n ...
AP6502 Description Pin Assignments
... The AP6502 is a 2A current mode control, synchronous buck regulator with built in power MOSFETs. Current mode control assures excellent ...
... The AP6502 is a 2A current mode control, synchronous buck regulator with built in power MOSFETs. Current mode control assures excellent ...
AP1186
... that is greater than the voltage present at the Vin pin. This flexibility makes the AP1186 ideal for applications where dual inputs are available such as a computer motherboard with an ATX style power supply that provides 5V and 3.3V to the board. One such application is the new graphic chip sets th ...
... that is greater than the voltage present at the Vin pin. This flexibility makes the AP1186 ideal for applications where dual inputs are available such as a computer motherboard with an ATX style power supply that provides 5V and 3.3V to the board. One such application is the new graphic chip sets th ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.