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FAN3268 2A Low-Voltage PMOS-NMOS Bridge Driver FAN3268 —2A Low-Voltage PMOS-NMOS Bridge Driver Features
FAN3268 2A Low-Voltage PMOS-NMOS Bridge Driver FAN3268 —2A Low-Voltage PMOS-NMOS Bridge Driver Features

... To enable this IC to turn a device on quickly, a local high-frequency bypass capacitor CBYP with low ESR and ESL should be connected between the VDD and GND pins with minimal trace length. This capacitor is in addition to bulk electrolytic capacitance of 10µF to 47µF commonly found on driver and con ...
Basic Analog Models for CMOS Technology
Basic Analog Models for CMOS Technology

... (back gate, bulk) - B. The body B, is biased so that negligible current flows through it. The basic operating principle is that a voltage is applied between the gate and the source in order to control the conducting channel between the source and drain regions. If the device is fabricated so that th ...
LM741 Data Sheet
LM741 Data Sheet

... other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement thereof. ...
1 Failure Analysis of Electrostatic Discharge and
1 Failure Analysis of Electrostatic Discharge and

series rated combinations
series rated combinations

... Note that there is no difference with regard to circuit protection and continuity when comparing series rated and fully rated systems. Although the upstream and downstream devices have different interrupting ratings, they both have the same time-current trip characteristic. Whether the downstream de ...
Datasheet
Datasheet

... The HMC587LC4B is a wideband GaAs InGaP Voltage Controlled Oscillator which incorporates the resonator, negative resistance device, and varactor diode. Output power and phase noise performance are excellent over temperature due to the oscillator’s monolithic construction. The Vtune port accepts an a ...
PAM2301 Description Pin Assignments
PAM2301 Description Pin Assignments

... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
PAM2846 Description Pin Assignments
PAM2846 Description Pin Assignments

... The PAM2846 is a high-efficiency boost type LED driver. It is designed for large LCD panel that employs an array of LEDs as back light source. The PAM2846 employs a current-mode step-up converter that drives six parallel strings of LEDs connected in multiple series. This built-in string current-cont ...
AP5724 Description Pin Assignments
AP5724 Description Pin Assignments

... Schottky diodes, with their low forward voltage drop and fast reverse recovery, are the ideal choices for AP5724 applications. The forward voltage drop of a Schottky diode represents the conduction losses in the diode, while the diode capacitance (CT or CD) represents the switching losses. For diode ...
PROTECTING RECHARGEABLE LI-ION AND LI-POLYMER BATTERIES in Consumer Portable Electronics
PROTECTING RECHARGEABLE LI-ION AND LI-POLYMER BATTERIES in Consumer Portable Electronics

... PolySwitch strap products offered by TE Circuit Protection include the SRP, LR4, VTP, VLR, VLP, MGP and MXP families. Strap devices, which come in a flat, tab-like form factor, can be incorporated into cylindrical based packs, prismatic cells or even pouch packs and can be applied to specific batter ...
VISHAY TCLT1 datasheet
VISHAY TCLT1 datasheet

CIRCUIT FUNCTION AND BENEFITS
CIRCUIT FUNCTION AND BENEFITS

... 16-bit bipolar simultaneously sampling SAR ADCs with onchip overvoltage protection greatly simplifies signal conditioning circuitry and reduces the overall parts count, board real estate, and cost of the measurement and protection board. Even with its high level of integration, each AD7606 requires ...
Electron Emission - Talking Electronics
Electron Emission - Talking Electronics

... The process of electron emission from a metal surface by supplying thermal energy to it is known as thermionic emission. At ordinary temperatures, the energy possessed by free electrons in the metal is inadequate to cause them to escape from the surface. When heat is applied to the metal, some of he ...
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Background Statement for SEMI Draft Document #4773
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... Nominal Voltages and Full Load Currents at a Typical Facility. NOTICE: This related information is not an official part of SEMI S22 and was derived from the work of the global Environmental, Health & Safety Committee. This related information was approved for publication by full letter ballot. R3-1 ...
Wulff construction and grain boundary in HCP crystals
Wulff construction and grain boundary in HCP crystals

... and approximates them (if necessary) to the nearest orientation from its original bonds. The approximation is being done by calculating the projection of the original bonds on each of the existing bond between one crystal to itself and between the two crystals. If the biggest projection is bigger th ...
Solving Parallel Circuits. - CatherineNorth Electronics
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... You can see that the tops of the resistors are connected together, and the bottoms of the resistors are connected together. This means that the resistors are beside each other, and in parallel. ...
Synchronous vs. Aynchronous Buck Regulators - Digi
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... w.r.t. its lower end, the diode is forward biased and therefore conducts current. If the forward resistance of the diode is assumed to be zero (in practice, however, a small resistance exists) the input voltage during the positive half-cycles is directly applied to the load resistance R L, making it ...
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... products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Li ...
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Modeling of six-pulse rectifier operating under

IGC136T170S8RH2
IGC136T170S8RH2

... approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended ...
GENERAL DESCRIPTION FEATURES
GENERAL DESCRIPTION FEATURES

... interchangeable option. Using this connection scheme and the recommended layout provides a solution, which requires no hardware modifications. Only one device should be used at a time, and both layouts should be located very close together if the recommended layout is not used. The DS32kHz ICC and I ...
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... onetechnology generation to the next, the minimal cost point allows doubling the number of transistor every two to three years. This trend has been sustained and is expected to be maintained well into first 20 years of this century. With the dramatic increase in chip complexity ULSI (Ultra Large Sca ...
batch1337733627 capacitors
batch1337733627 capacitors

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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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