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PDF: 44.7MB
PDF: 44.7MB

... expected to enhance IPM growth in two directions: 1. Growth toward a high power/ high performance region where the IPM would feature further performance enhancement of their integrated power elements. ...
AND8125/D Evaluating the Power Capability of NCP101X
AND8125/D Evaluating the Power Capability of NCP101X

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Design of Analog Circuits in 28nm CMOS Technology for Physics
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... improve further, but many new challenges have been introduced for analog designers. In fact, for the digital circuits CMOS scaling-down leads to several benefits: speed improvement, reduced power consumption, high integration and complexity level. The analog circuits, instead, strongly suffers from ...
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... current limiting. The device includes one 0.10Ω N-channel MOSFET switch and one 0.15Ω P-channel synchronous rectifier. This product has the ability to simply program the output voltage from 2.5V to ...
A Novel High Speed Differential Ultra Low-Voltage
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PDF:2.06MB

... The printed circuit board utilizes a low inductive interface between the on board DC-link snubber (only one piece is populated) capacitors and the high voltage supply of the IGBTs. All power connections for the DC-link electrolytic capacitors and the 3 phase outputs are utilizing solid terminal bloc ...
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... To enable this IC to turn a device on quickly, a local high-frequency bypass capacitor CBYP with low ESR and ESL should be connected between the VDD and GND pins with minimal trace length. This capacitor is in addition to bulk electrolytic capacitance of 10µF to 47µF commonly found on driver and con ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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