
PDF: 44.7MB
... expected to enhance IPM growth in two directions: 1. Growth toward a high power/ high performance region where the IPM would feature further performance enhancement of their integrated power elements. ...
... expected to enhance IPM growth in two directions: 1. Growth toward a high power/ high performance region where the IPM would feature further performance enhancement of their integrated power elements. ...
PAM2306 Description Pin Assignments
... excellent stability and transient response. To ensure the longest battery life in portable applications, the PAM2306 provides a power saving Pulse-Skipping Modulation (PSM) mode to reduce quiescent current under light load operation. The PAM2306 supports a range of input voltages from 2.5V to 5.5V, ...
... excellent stability and transient response. To ensure the longest battery life in portable applications, the PAM2306 provides a power saving Pulse-Skipping Modulation (PSM) mode to reduce quiescent current under light load operation. The PAM2306 supports a range of input voltages from 2.5V to 5.5V, ...
Design of Analog Circuits in 28nm CMOS Technology for Physics
... improve further, but many new challenges have been introduced for analog designers. In fact, for the digital circuits CMOS scaling-down leads to several benefits: speed improvement, reduced power consumption, high integration and complexity level. The analog circuits, instead, strongly suffers from ...
... improve further, but many new challenges have been introduced for analog designers. In fact, for the digital circuits CMOS scaling-down leads to several benefits: speed improvement, reduced power consumption, high integration and complexity level. The analog circuits, instead, strongly suffers from ...
PAM2401 Description Pin Assignments
... current limiting. The device includes one 0.10Ω N-channel MOSFET switch and one 0.15Ω P-channel synchronous rectifier. This product has the ability to simply program the output voltage from 2.5V to ...
... current limiting. The device includes one 0.10Ω N-channel MOSFET switch and one 0.15Ω P-channel synchronous rectifier. This product has the ability to simply program the output voltage from 2.5V to ...
A Novel High Speed Differential Ultra Low-Voltage
... low power version. The master latches presented are different from previously published ULV Flip-Flops [9] in several aspects. The inputs to the Flip-Flops are used to control the recharge transistors and are used to reduce the static power consumption. By adding transistors to increase the control ...
... low power version. The master latches presented are different from previously published ULV Flip-Flops [9] in several aspects. The inputs to the Flip-Flops are used to control the recharge transistors and are used to reduce the static power consumption. By adding transistors to increase the control ...
DC and AC Motor Drives
... armature current Ia for a separately excited motor. • In forward motoring (quadrant I), Va, Eg, and Ia are all positive. The torque and speed are also positive in this quadrant. • During forward braking (quadrant II), the motor runs in the forward direction and the induced emf Eg continues to be pos ...
... armature current Ia for a separately excited motor. • In forward motoring (quadrant I), Va, Eg, and Ia are all positive. The torque and speed are also positive in this quadrant. • During forward braking (quadrant II), the motor runs in the forward direction and the induced emf Eg continues to be pos ...
Chapter 1 Power Electronic Devices (Part I)
... Fast recovery diode Reverse recovery time and charge specified. trr is usually less than 1μs, for many less than 100 ns —— ultra-fast recovery diode. ...
... Fast recovery diode Reverse recovery time and charge specified. trr is usually less than 1μs, for many less than 100 ns —— ultra-fast recovery diode. ...
AL9910/ AL9910A/ AL9910-5/ AL9910A-5 Description Pin Assignments
... both - depending on the application. Pulling the PWM_D pin to ground will turn off the AL9910. When disabled, the AL9910’s quiescent current is typically 0.5mA (0.65 for AL9910A). Reducing the LD voltage will reduce the LED current but it will not entirely turn off the external power transistor and ...
... both - depending on the application. Pulling the PWM_D pin to ground will turn off the AL9910. When disabled, the AL9910’s quiescent current is typically 0.5mA (0.65 for AL9910A). Reducing the LD voltage will reduce the LED current but it will not entirely turn off the external power transistor and ...
Calculating Power Losses in an IGBT Module
... The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discha ...
... The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discha ...
NTB75N03R, NTP75N03R Power MOSFET 75 Amps, 25 Volts N
... Figure 6. Drain−to−Source Leakage Current versus Voltage ...
... Figure 6. Drain−to−Source Leakage Current versus Voltage ...
Datasheet - GaN Systems
... HEMT in the on-state is similar to that of a silicon MOSFET, with the I-V curve symmetrical about the origin and it exhibits a channel resistance, RDS(on), similar to forward conduction operation. Off-state condition (VGS ≤ 0 V): The reverse characteristics in the off-sate are different from silicon ...
... HEMT in the on-state is similar to that of a silicon MOSFET, with the I-V curve symmetrical about the origin and it exhibits a channel resistance, RDS(on), similar to forward conduction operation. Off-state condition (VGS ≤ 0 V): The reverse characteristics in the off-sate are different from silicon ...
SIGC185T170R2C IGBT Chip in NPT-technology
... The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disc ...
... The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disc ...
PAM2308 Description Pin Assignments
... excellent stability and transient response. To ensure the longest battery life in portable applications, the PAM2308 provides a powersaving Pulse- Skipping Modulation (PSM) mode to reduce quiescent current under light load operation. The PAM2308 supports a range of input voltages from 2.5V to 5.5V, ...
... excellent stability and transient response. To ensure the longest battery life in portable applications, the PAM2308 provides a powersaving Pulse- Skipping Modulation (PSM) mode to reduce quiescent current under light load operation. The PAM2308 supports a range of input voltages from 2.5V to 5.5V, ...
Understanding Electronics Components
... between slider and one end of pot, while decreasing the resistance between slider and the other end of pot. Coated pots are much more common. With these, resistance can be linear, logarithmic, inverse-logarithmic or other, depending upon the angle or position of the slider. Most common are linear an ...
... between slider and one end of pot, while decreasing the resistance between slider and the other end of pot. Coated pots are much more common. With these, resistance can be linear, logarithmic, inverse-logarithmic or other, depending upon the angle or position of the slider. Most common are linear an ...
PDF:2.06MB
... The printed circuit board utilizes a low inductive interface between the on board DC-link snubber (only one piece is populated) capacitors and the high voltage supply of the IGBTs. All power connections for the DC-link electrolytic capacitors and the 3 phase outputs are utilizing solid terminal bloc ...
... The printed circuit board utilizes a low inductive interface between the on board DC-link snubber (only one piece is populated) capacitors and the high voltage supply of the IGBTs. All power connections for the DC-link electrolytic capacitors and the 3 phase outputs are utilizing solid terminal bloc ...
Analog/RF circuit design techniques for nanometerscale IC
... effective gate-overdrive voltages, the current gain is about unity for L | 30 Pm . The impact of gate-leakage on matching Gate leakage is caused by quantum-mechanical tunnelling and depends on the layer-thickness and the field-strength. It therefore exhibits spread that can limit the achievable leve ...
... effective gate-overdrive voltages, the current gain is about unity for L | 30 Pm . The impact of gate-leakage on matching Gate leakage is caused by quantum-mechanical tunnelling and depends on the layer-thickness and the field-strength. It therefore exhibits spread that can limit the achievable leve ...
AN-7019 Limiting Cross-Conduction Current in Synchronous Buck Converter Designs
... status is that this topology offers designers an ease of control, a small footprint and high power conversion efficiencies at a relatively low cost. An important consideration in designing this synchronous buck converter is limiting the shoot-through or cross conduction current. Through mathematical ...
... status is that this topology offers designers an ease of control, a small footprint and high power conversion efficiencies at a relatively low cost. An important consideration in designing this synchronous buck converter is limiting the shoot-through or cross conduction current. Through mathematical ...
Characteristics of quantum well infrared photodetectors
... Due to the sophistication of physical mechanisms responsible for the QWIP operation ~transport mechanism of photoexcited electrons, mechanisms of the injection of the electrons and their capture into the QWs, the nature of the photoelectric gain, etc.! they are the research topic of high interest. T ...
... Due to the sophistication of physical mechanisms responsible for the QWIP operation ~transport mechanism of photoexcited electrons, mechanisms of the injection of the electrons and their capture into the QWs, the nature of the photoelectric gain, etc.! they are the research topic of high interest. T ...
Dummy-Gate Structure to Improve Turn
... For deep submicron complementary metal-oxide semiconductors (CMOS) technologies, the gate oxide thickness has been scaled down to increase circuit operating speed, however, its time-to-breakdown, tBD , or charge-to-breakdown, QBD , will also decrease. The ultra-thin gate oxide can not sustain the ov ...
... For deep submicron complementary metal-oxide semiconductors (CMOS) technologies, the gate oxide thickness has been scaled down to increase circuit operating speed, however, its time-to-breakdown, tBD , or charge-to-breakdown, QBD , will also decrease. The ultra-thin gate oxide can not sustain the ov ...
FAN3268 2A Low-Voltage PMOS-NMOS Bridge Driver FAN3268 —2A Low-Voltage PMOS-NMOS Bridge Driver Features
... To enable this IC to turn a device on quickly, a local high-frequency bypass capacitor CBYP with low ESR and ESL should be connected between the VDD and GND pins with minimal trace length. This capacitor is in addition to bulk electrolytic capacitance of 10µF to 47µF commonly found on driver and con ...
... To enable this IC to turn a device on quickly, a local high-frequency bypass capacitor CBYP with low ESR and ESL should be connected between the VDD and GND pins with minimal trace length. This capacitor is in addition to bulk electrolytic capacitance of 10µF to 47µF commonly found on driver and con ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.