
6- and 8-Channel Low Capacitance ESD Arrays
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any partic ...
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any partic ...
IGC36T120T8L IGBT4 Low Power Chip
... approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended ...
... approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended ...
Sensitivity of narrow- and wideband LNA performance to individual transistor
... emitter degenerated LNA since its design relies on leveraging the transistor characteristics. In the LC-ladder and capacitive feedback case these were, however, less important as its design relies more on the passive components in the ladder filter and feedback network. The series resistance paramet ...
... emitter degenerated LNA since its design relies on leveraging the transistor characteristics. In the LC-ladder and capacitive feedback case these were, however, less important as its design relies more on the passive components in the ladder filter and feedback network. The series resistance paramet ...
R.M.A. Dawson, Z. Shen, D.A. Furst, S. Connor, J. Hsu, M.G.Kane, R.G. Stewart, M.H. Lu, A. Ipri, J.C. Sturm, et al, "A Polysilicon Active Matrix Organic Light Emitting Diode Display with Integrated Drivers," SID Symposium Digest 30, 438 (1999).
... cycle begins. The select signal now has two pulses, one to turn off the pixel to allow the OLED voltage to decay and a second pulse, one row time later, to program the row of pixels. A side effect of this mode of operation is that the select pulses are not identical for each row time, so odd and eve ...
... cycle begins. The select signal now has two pulses, one to turn off the pixel to allow the OLED voltage to decay and a second pulse, one row time later, to program the row of pixels. A side effect of this mode of operation is that the select pulses are not identical for each row time, so odd and eve ...
IGC70T120T8RQ High Speed IGBT in Trench and Fieldstop Technology
... The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disc ...
... The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disc ...
EC_-_I_IMPORTANT_QUESTIONS_86623 - e
... 1. What is meant by small signal? 2. What is the physical meaning of small signal parameter ro? 3. Write the equation for small signal condition that must be satisfied for linear amplifiers. 4. Draw the small signal equivalent circuit common source NMOS. 5. What is another name for common drain ampl ...
... 1. What is meant by small signal? 2. What is the physical meaning of small signal parameter ro? 3. Write the equation for small signal condition that must be satisfied for linear amplifiers. 4. Draw the small signal equivalent circuit common source NMOS. 5. What is another name for common drain ampl ...
How it works
... transistors and their commensurate steady doubling on a chip about every two years, has been the source of a 50-year technical and economic revolution. Whether this scaling paradigm lasts for five more years or 15, it will eventually come to an end. The emphasis in electronics design will have to sh ...
... transistors and their commensurate steady doubling on a chip about every two years, has been the source of a 50-year technical and economic revolution. Whether this scaling paradigm lasts for five more years or 15, it will eventually come to an end. The emphasis in electronics design will have to sh ...
PAM8006A Description Pin Assignments
... The internal 2.5V bias generator (V2P5) provides the internal bias for the preamplifier stage. The external input capacitors and this internal reference allow the inputs to be biased within the optimal common-mode range of the input preamplifiers. The selection of the capacitor value on the V2P5 ter ...
... The internal 2.5V bias generator (V2P5) provides the internal bias for the preamplifier stage. The external input capacitors and this internal reference allow the inputs to be biased within the optimal common-mode range of the input preamplifiers. The selection of the capacitor value on the V2P5 ter ...
Study of the Radiation-Hardness of VCSEL and PIN
... recovery is logarithmic like and hence slow, but the arrays ...
... recovery is logarithmic like and hence slow, but the arrays ...
RITTER paper.p65
... overall component board-mounting costs that in many cases are significantly higher than the cost of the passive component itself2! Additional space saving and component count reduction can be achieved when the capacitor and resistor elements are integrated into the same package. Component manufactur ...
... overall component board-mounting costs that in many cases are significantly higher than the cost of the passive component itself2! Additional space saving and component count reduction can be achieved when the capacitor and resistor elements are integrated into the same package. Component manufactur ...
Keysight Technologies B1505A Power Device Analyzer/Curve Tracer
... are becoming increasingly important as electronic switches for a variety of applications. Characterization of large breakdown voltages (up to 10 kV), high currents (hundreds of amps), gate charge, junction capacitances under high voltage DC biases (up to 3000 V), device temperature dependency and th ...
... are becoming increasingly important as electronic switches for a variety of applications. Characterization of large breakdown voltages (up to 10 kV), high currents (hundreds of amps), gate charge, junction capacitances under high voltage DC biases (up to 3000 V), device temperature dependency and th ...
Application Note 7533 A Revised MOSFET Model With Dynamic Temperature Compensation Abstract
... model the exponential relationship of drain current and gate-tosource voltage in the ©2003 Fairchild Semiconductor Corporation ...
... model the exponential relationship of drain current and gate-tosource voltage in the ©2003 Fairchild Semiconductor Corporation ...
CAT3649AGEVB CAT3649 Evaluation Board User's Manual EVAL BOARD USER’S MANUAL
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/ ...
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/ ...
FSA1208 Low-Power, Eight-Port, High-Speed Isolation Switch FSA1208 — Low-Power, Eight-Port, Features
... switch. This part is configured as a single-pole, singlethrow switch and is optimized for isolating a high-speed source, such as a DDR memory bus. The FSA1208 features an extremely low on capacitance (CON) of 6pF. Superior channel-to-channel crosstalk minimizes interference. ...
... switch. This part is configured as a single-pole, singlethrow switch and is optimized for isolating a high-speed source, such as a DDR memory bus. The FSA1208 features an extremely low on capacitance (CON) of 6pF. Superior channel-to-channel crosstalk minimizes interference. ...
NCP803 Very Low Supply Current 3−Pin Microprocessor Reset
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any partic ...
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any partic ...
PAM8408
... volume change, or hold down to ramp several volume changes. The delay is optimally configured for push button volume control. If either the UP or DOWN pin remains low after the first volume transition the volume will change again, but this time after 10 cycles. The followed transition occurs at 4 cy ...
... volume change, or hold down to ramp several volume changes. The delay is optimally configured for push button volume control. If either the UP or DOWN pin remains low after the first volume transition the volume will change again, but this time after 10 cycles. The followed transition occurs at 4 cy ...
Theoretical Study on Electronic, Optical Properties and
... been done on the optical and electronic properties of α-ZnP2 to investigate its applications. Neither CdP2 nor ZnP2 are ultrahard materials, but high pressure has an important effect on the hardness of materials. Studying the mechanism of the influence of high pressure on the hardness of materials i ...
... been done on the optical and electronic properties of α-ZnP2 to investigate its applications. Neither CdP2 nor ZnP2 are ultrahard materials, but high pressure has an important effect on the hardness of materials. Studying the mechanism of the influence of high pressure on the hardness of materials i ...
AP5726 WHITE LED STEP-UP CONVERTER Description
... Feedback Pin. Reference voltage is 0.31V. Connect cathode of lowest LED and a sense resister here. Calculate resistor value according to the formula: RSET = 0.31V / ILED Converter On/Off Control Input. A high input at EN turns the converter On, and a low input turns it off. If On/Off control is not ...
... Feedback Pin. Reference voltage is 0.31V. Connect cathode of lowest LED and a sense resister here. Calculate resistor value according to the formula: RSET = 0.31V / ILED Converter On/Off Control Input. A high input at EN turns the converter On, and a low input turns it off. If On/Off control is not ...
project - Electrical and Computer Engineering
... Each cell of a CCD contains a metal oxide semiconductor (MOS), the same device that forms the gate of a MOS field effect transistor (FET). Although both surface channel and buried channel MOS capacitors have been utilized in CCD construction, virtually all CCDs manufactured today are of the buried c ...
... Each cell of a CCD contains a metal oxide semiconductor (MOS), the same device that forms the gate of a MOS field effect transistor (FET). Although both surface channel and buried channel MOS capacitors have been utilized in CCD construction, virtually all CCDs manufactured today are of the buried c ...
AP5725 WHITE LED STEP-UP CONVERTER Description
... Feedback Pin. Reference voltage is 0.25V. Connect cathode of lowest LED and a sense resister here. Calculate resistor value according to the formula: RSET = 0.25V / ILED Converter On/Off Control Input. A high input at EN turns the converter On, and a low input turns it off. If On/Off control is not ...
... Feedback Pin. Reference voltage is 0.25V. Connect cathode of lowest LED and a sense resister here. Calculate resistor value according to the formula: RSET = 0.25V / ILED Converter On/Off Control Input. A high input at EN turns the converter On, and a low input turns it off. If On/Off control is not ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.