
FAN3268 2 A Low-Voltage PMOS-NMOS Bridge Driver F AN3
... Theta_JA (ΘJA): Thermal resistance between junction and ambient, dependent on the PCB design, heat sinking, and airflow. The value given is for natural convection with no heatsink using a 2S2P board, as specified in JEDEC standards JESD51-2, JESD51-5, and JESD51-7, as appropriate. Psi_JB (ΨJB): Ther ...
... Theta_JA (ΘJA): Thermal resistance between junction and ambient, dependent on the PCB design, heat sinking, and airflow. The value given is for natural convection with no heatsink using a 2S2P board, as specified in JEDEC standards JESD51-2, JESD51-5, and JESD51-7, as appropriate. Psi_JB (ΨJB): Ther ...
PAM2305 Description Pin Assignments
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
The Joy of Precision Analog: True System-on
... As systems increase in complexity, engineers have a need to incorporate more components, both analog and digital, into a single device while maintaining the integrity of the design. New mixed-signal microcontrollers are emerging which integrate more precision analog components than previous generati ...
... As systems increase in complexity, engineers have a need to incorporate more components, both analog and digital, into a single device while maintaining the integrity of the design. New mixed-signal microcontrollers are emerging which integrate more precision analog components than previous generati ...
IGC18T120T8Q High Speed IGBT in Trench and Fieldstop Technology
... The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disc ...
... The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disc ...
FSB50825US Motion SPM 5 Series ®
... 2. RC-coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM® 5 product and MCU are useful to prevent improper input signal caused by surge-noise. 3. The voltage-drop across R3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and ...
... 2. RC-coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM® 5 product and MCU are useful to prevent improper input signal caused by surge-noise. 3. The voltage-drop across R3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and ...
AP3156
... SDI is a general purpose 1-wire digital interface designed to transport digital controls for power management ICs such as AP3156. The current levels of the six channels can be configured either together, individually or specific grouping. Up to 32 current levels are allowed. A generic system control ...
... SDI is a general purpose 1-wire digital interface designed to transport digital controls for power management ICs such as AP3156. The current levels of the six channels can be configured either together, individually or specific grouping. Up to 32 current levels are allowed. A generic system control ...
Document
... - Input resistance is very low (re). - Short circuit current gain is nearly unity (). - Like CE amplifier, it has high output resistance RC. - A very importance application of CB amplifier is current buffer. ...
... - Input resistance is very low (re). - Short circuit current gain is nearly unity (). - Like CE amplifier, it has high output resistance RC. - A very importance application of CB amplifier is current buffer. ...
AN604 - STMicroelectronics
... Junction temperature dependence For two different junction temperatures, the current versus forward voltage curves cross at a current level point Ic, depending on the diode technology. When the current is lower than Ic, the temperature coefficient αVF of the forward voltage is negative. When the cur ...
... Junction temperature dependence For two different junction temperatures, the current versus forward voltage curves cross at a current level point Ic, depending on the diode technology. When the current is lower than Ic, the temperature coefficient αVF of the forward voltage is negative. When the cur ...
Application of PIN diodes in Physics Research
... Whereas the concept of PIN diodes is very old, it was mentioned in a paper [1] by Kleinman in 1956, its application to radiation detection is more or less recent; for example, Nowotny and Reiter [2] reported low energy photon measurements in 1977. Since the proposal of the basic silicon point contac ...
... Whereas the concept of PIN diodes is very old, it was mentioned in a paper [1] by Kleinman in 1956, its application to radiation detection is more or less recent; for example, Nowotny and Reiter [2] reported low energy photon measurements in 1977. Since the proposal of the basic silicon point contac ...
Lecture 5 - web page for staff
... circuitry and provides a low impedance bypass for the anode to cathode current. This momentary loss of current through the SCR turns it off. The switching circuitry can also apply a reverse bias voltage across the SCR, which also will turn off the SCR. ...
... circuitry and provides a low impedance bypass for the anode to cathode current. This momentary loss of current through the SCR turns it off. The switching circuitry can also apply a reverse bias voltage across the SCR, which also will turn off the SCR. ...
TGA2512 数据资料DataSheet下载
... typical P1dB, while in gate-biased mode the typical P1dB is over 13dBm. The small size of 2.46mm2 allows ease of compaction into MultiChip-Modules (MCMs). The TGA2512 is 100% DC and RF tested onwafer to ensure performance compliance. ...
... typical P1dB, while in gate-biased mode the typical P1dB is over 13dBm. The small size of 2.46mm2 allows ease of compaction into MultiChip-Modules (MCMs). The TGA2512 is 100% DC and RF tested onwafer to ensure performance compliance. ...
FT7522 Reset Timer with Fixed Delay and Reset Pulse
... original HIGH state 400ms after time tREC has expired, regardless of the state of /SR0. The /RST1 output is an open-drain driver. When the count time exceeds time 7.5s, the /RST1 output pulls LOW. Short Duration (tW < 7.5s) When the /SR0 input goes LOW, the internal timer starts counting. If the /SR ...
... original HIGH state 400ms after time tREC has expired, regardless of the state of /SR0. The /RST1 output is an open-drain driver. When the count time exceeds time 7.5s, the /RST1 output pulls LOW. Short Duration (tW < 7.5s) When the /SR0 input goes LOW, the internal timer starts counting. If the /SR ...
In this discussion we cover 27MHz transmitters and receivers
... Very little is available on how these circuits work and this article will cover the "building blocks." When we use the term "building block" we mean a group of components making up a circuit that carries out a particular function and can be connected to another circuit to achieve a final result. In ...
... Very little is available on how these circuits work and this article will cover the "building blocks." When we use the term "building block" we mean a group of components making up a circuit that carries out a particular function and can be connected to another circuit to achieve a final result. In ...
Building Modern Integrated Systems: A Cross-cut Approach (The Electrical, The Optical and The Mechanical)
... Polysilicon - transistor gates, local interconnect and resistors ...
... Polysilicon - transistor gates, local interconnect and resistors ...
AZV321 Description Pin Assignments Applications Functional Block
... which has rail-to-rail output swing capability. The input common-mode voltage range includes ground. The chip exhibits excellent speedpower ratio, achieving 1MHz of bandwidth and 1V/µs of slew rate with low supply current. ...
... which has rail-to-rail output swing capability. The input common-mode voltage range includes ground. The chip exhibits excellent speedpower ratio, achieving 1MHz of bandwidth and 1V/µs of slew rate with low supply current. ...
Dual 20 V N-Channel NexFET™ Power
... ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new ...
... ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new ...
semiconductor diodes
... If the ohmmeter has drawn the symbol of the diodes on one of its domains, you will do the measurement within that domain, otherwise you will use any domain you want; Connect the rectifying diode with the anode of the (+) lead of the ohmmeter (forward bias of the diode) and then read the value; ...
... If the ohmmeter has drawn the symbol of the diodes on one of its domains, you will do the measurement within that domain, otherwise you will use any domain you want; Connect the rectifying diode with the anode of the (+) lead of the ohmmeter (forward bias of the diode) and then read the value; ...
Extending 28nm Leadership with an Expanded Portfolio Read Backgrounder
... a dependable tool flow based on the Vivado® Design Suite not only represents a major leap in productivity due to drastic improvements in design integration time and implementation results over traditional flows, but provides a consistent design environment as applications migrate across Artix-7 and ...
... a dependable tool flow based on the Vivado® Design Suite not only represents a major leap in productivity due to drastic improvements in design integration time and implementation results over traditional flows, but provides a consistent design environment as applications migrate across Artix-7 and ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.