The Fundamentals of Thermoelectrics
... T2 − T1 , maintained by the local temperatures T1 and T2 . The two thermovoltages established within each conductor produce a net thermovoltage, VAB . ...
... T2 − T1 , maintained by the local temperatures T1 and T2 . The two thermovoltages established within each conductor produce a net thermovoltage, VAB . ...
Efficient Power Conversion Corporation
... Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein. Engineering devices, designated with an ENG* suffix at point of purchase, are first article products that EPC is preparing for production release. Specifications may change ...
... Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein. Engineering devices, designated with an ENG* suffix at point of purchase, are first article products that EPC is preparing for production release. Specifications may change ...
Electronic Components
... orientation. Observe pin 1 location on sockets or circuits. Treat all ICs as if they are very susceptible to ESD damage (very many actually are), so rigorous precautions should be taken. Leads generally should not be bent. LSU 06/04/2007 ...
... orientation. Observe pin 1 location on sockets or circuits. Treat all ICs as if they are very susceptible to ESD damage (very many actually are), so rigorous precautions should be taken. Leads generally should not be bent. LSU 06/04/2007 ...
Electronic Components
... orientation. Observe pin 1 location on sockets or circuits. Treat all ICs as if they are very susceptible to ESD damage (very many actually are), so rigorous precautions should be taken. Leads generally should not be bent. LSU 08/11/2004 ...
... orientation. Observe pin 1 location on sockets or circuits. Treat all ICs as if they are very susceptible to ESD damage (very many actually are), so rigorous precautions should be taken. Leads generally should not be bent. LSU 08/11/2004 ...
DATA SHEET BZA800AVL series Quadruple low capacitance ESD suppressor
... All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No ...
... All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No ...
PBSS306PX 1. Product profile 100 V, 3.7 A PNP low V
... therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use ...
... therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use ...
Diode Clipping Circuits
... shown, then both the positive and negative half cycles would be clipped as diode D1 clips the positive half cycle of the sinusoidal input waveform while diode D2 clips the negative half cycle. Then diode clipping circuits can be used to clip the positive half cycle, the negative half cycle or both. ...
... shown, then both the positive and negative half cycles would be clipped as diode D1 clips the positive half cycle of the sinusoidal input waveform while diode D2 clips the negative half cycle. Then diode clipping circuits can be used to clip the positive half cycle, the negative half cycle or both. ...
2SAR562F3
... the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages aris ...
... the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages aris ...
The Basic Principles of Electrical Overstress (EOS)
... and power-off transients, inrush current, and excessive voltages or currents (in the case of LEDs, this is commonly known as overdriving). ESD – which we are going to consider as a subset of EOS – has electrostatic sources mostly limited to the manufacturing, packaging, and handling of electronic co ...
... and power-off transients, inrush current, and excessive voltages or currents (in the case of LEDs, this is commonly known as overdriving). ESD – which we are going to consider as a subset of EOS – has electrostatic sources mostly limited to the manufacturing, packaging, and handling of electronic co ...
This application note explains the benefits of using the voltage-identification technique to reduce power consumption and system costs.
... allow the voltage level to be set. This feature is sometimes used in production to set each supply rail to the level required for normal operation. However, when only fixed output power supplies are used, a different solution for the VCCINT and VCCBRAM supplies should be considered. In most cases, V ...
... allow the voltage level to be set. This feature is sometimes used in production to set each supply rail to the level required for normal operation. However, when only fixed output power supplies are used, a different solution for the VCCINT and VCCBRAM supplies should be considered. In most cases, V ...
Frequently Asked Questions Solid-State Relays Frequently Asked
... A: For some battery powered applications and telecom applications, low turn-on current and slow speed are sufficient. Moderate speed performances are required where power consumption is critical. When every second is essential like in instrumentation applications, high-speed performance as a result ...
... A: For some battery powered applications and telecom applications, low turn-on current and slow speed are sufficient. Moderate speed performances are required where power consumption is critical. When every second is essential like in instrumentation applications, high-speed performance as a result ...
PAM2309 Description Pin Assignments
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
TL082
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
Design of Gate-Ground-NMOS-Based ESD
... Electrostatic discharge (ESD) damage has become the main reliability issue for deep-submicron CMOS integrated circuit products. To overcome this ESD problem, on-chip ESD protection circuits have been added around the input and output pads of CMOS ICs as shown in Fig. 1. The effectiveness of ESD prot ...
... Electrostatic discharge (ESD) damage has become the main reliability issue for deep-submicron CMOS integrated circuit products. To overcome this ESD problem, on-chip ESD protection circuits have been added around the input and output pads of CMOS ICs as shown in Fig. 1. The effectiveness of ESD prot ...
EIAJ ED-4701/001
... The original standards of EIAJ ED-4701 had been published by the Electronic Industrial Association of Japan (hereinafter abbreviated as EIAJ) in 1970's. The standards related to integrated circuits (IC121-1985 and separate volume Appendix2-1988) had been published, and the standards related to discr ...
... The original standards of EIAJ ED-4701 had been published by the Electronic Industrial Association of Japan (hereinafter abbreviated as EIAJ) in 1970's. The standards related to integrated circuits (IC121-1985 and separate volume Appendix2-1988) had been published, and the standards related to discr ...
PAM8603E Description Features Applications Pin Assignments
... Mute Operation The MUTE pin is an input for controlling the output state of the PAM8603E. A logic low on this pin diables the outputs, and a logic high on this pin enables the outputs. This pin may be used as a quick disable or enable of the outputs without a volume fade. Quiescent current is listed ...
... Mute Operation The MUTE pin is an input for controlling the output state of the PAM8603E. A logic low on this pin diables the outputs, and a logic high on this pin enables the outputs. This pin may be used as a quick disable or enable of the outputs without a volume fade. Quiescent current is listed ...
Z`JMeIIRJXy/yin/ BY W WWW
... potential levels when the input signal level is respectively base electrode 40 of the ?rst transistor 36 to apply the greater than, or less than, a predetermined threshold level. combined signal thereto. The ?rst and second transistors A threshold gate is termed a majority logic gate if the are conn ...
... potential levels when the input signal level is respectively base electrode 40 of the ?rst transistor 36 to apply the greater than, or less than, a predetermined threshold level. combined signal thereto. The ?rst and second transistors A threshold gate is termed a majority logic gate if the are conn ...
Starting Over: gm/Id-Based MOSFET Modeling as a Basis for
... various analog design texts shows that this problem is overcome largely by ignoring it – design and analysis are carried out under the assumption that the “squarelaw” is valid. Use of these assumptions has tended to not be fatal, since they actually err on the side of caution; for example, if the “s ...
... various analog design texts shows that this problem is overcome largely by ignoring it – design and analysis are carried out under the assumption that the “squarelaw” is valid. Use of these assumptions has tended to not be fatal, since they actually err on the side of caution; for example, if the “s ...
Principles of Electronic Communication Systems
... Microwave energy is applied to one port and passed to another with minor attenuation, however the signal will be greatly attenuated on its way to a third port. The primary application of a circulator is a diplexer, which allows a single antenna to be shared by a transmitter and receiver. ...
... Microwave energy is applied to one port and passed to another with minor attenuation, however the signal will be greatly attenuated on its way to a third port. The primary application of a circulator is a diplexer, which allows a single antenna to be shared by a transmitter and receiver. ...
High-/Mixed-Voltage RF and Analog CMOS Circuits Come of Age
... oxide transistors are still kept available in advanced processes to facilitate I/O communications. Thus, bringing thick‐oxide transistors, and their associated VDD,IO, into the RF and analog circuit design portfolio appears to be a handy option to increase the design flexibility. Thick‐oxi ...
... oxide transistors are still kept available in advanced processes to facilitate I/O communications. Thus, bringing thick‐oxide transistors, and their associated VDD,IO, into the RF and analog circuit design portfolio appears to be a handy option to increase the design flexibility. Thick‐oxi ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.