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MAXISS: A New Servo Duty IPM With On-Chip
MAXISS: A New Servo Duty IPM With On-Chip

... short-circuit condition is present. In the case of a severe short-circuit condition that causes the current to Figure 14 Overtemperature Sensing Circuit exceed the data sheet specified short-circuit trip level (SC) the IGBT involved will be immediately shut down. In the case of a less severe overcur ...
High-/Mixed-Voltage RF and Analog CMOS Circuits Come of Age
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... oxide transistors are still kept available in advanced processes to facilitate I/O communications. Thus, bringing  thick‐oxide transistors, and their associated VDD,IO, into the RF and analog circuit design portfolio appears to be  a  handy  option  to  increase  the  design  flexibility.  Thick‐oxi ...
Perspective for Journal of Pharmaceutical Science
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... humans (28). While acidic solutions of the base compound showed good oral pharmacokinetics, the stability of the drug in acidic solution is not consistent with a product (26). Therefore, the discovery of the salt form ensured both shelf stability and robust bioavailability performance. The salt sele ...
DT1042-04SO Features Mechanical Data
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... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
AP1184 General Description Features
AP1184 General Description Features

... out the control pin of the regulator that provides the base current to the power NPN and connecting it to a voltage that is greater than the voltage present at the Vin pin. This flexibility makes the AP1184 ideal for applications where dual inputs are available such as a computer motherboard with an ...
Intracrystalline inclusions within single crystalline
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... when intracrystalline molecules extracted from sea urchin spines were allowed to become incorporated in vitro into growing single crystals of calcite. These results demonstrated that biogenic biomolecules are indeed able to become integrated into the microstructure, thereby altering it in vitro.34 F ...
PMSM electrical parameters measurement
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... Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets a ...
RPT-34PB3F
RPT-34PB3F

... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
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IGC142T120T8RH IGBT4 High Power Chip
IGC142T120T8RH IGBT4 High Power Chip

... approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended ...
Automotive High Brightness LED Control Based on the
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AP1695 Description Features
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... When the output is shorted, the output voltage will be clamped at 0. At this condition, V CC will drop down without auxiliary winding for power supply. And the VCC will drop to UVLO threshold voltage, the IC will shut down and restart a new operating cycle, and the V CC is charged by startup resista ...
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Thermal Analysis of Power Semiconductor Converters
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... Extremely short overloads of the type that occur under surge or fault conditions, are limited to a few cycles in duration. Here the junction temperature exceeds its maximum rating and all operational parameters are severely affected. However the low transient thermal ...
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RPT-38PB3F
RPT-38PB3F

... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
RPT-37PB3F
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... Phototransistor, top view type RPT-37PB3F The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. It is possible ...
F re esca le S em ic onduc to r, I nc
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... licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the ...
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IGC142T120T8RM IGBT4 Medium Power Chip
IGC142T120T8RM IGBT4 Medium Power Chip

... approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended ...
REFURBISHMENT OF THE HOUGHTON COLLEGE SCANNING TRANSMISSION ELECTRON MICROSCOPE (STEM) By Mark Spencer
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... Thin films are also used in chemical coatings. Most cars use a thin film “wash coat” coating over a high surface area “monolith” structure inside the exhaust pipe to catalyze harmful combustion byproducts such as carbon monoxide and various nitrogen and sulfur oxides[15]. This is generally a ceramic ...
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... of each respective NPN act as pull-downs and suppress the amount of leakage that may occur from the input. The diodes connected between the output and COM pin is used to suppress the kick-back voltage from an inductive load that is excited when the NPN drivers are turned off (stop sinking) and the s ...
Zhou 2010
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... I. INTRODUCTION Organic electronics such as photovoltaic and thin film transistors 共TFTs兲 using conjugated polymers have received increasing attention because of their low cost, flexibility, and light weight.1,2 However, the performance of organic devices is limited by the low charge mobility in org ...
WP221 - 对静态功耗和采用实际节温的重要性的分析
WP221 - 对静态功耗和采用实际节温的重要性的分析

... voltage between the gate and the source at which the channel conducts current to a certain extent. Small high-speed transistors need a lower threshold voltage (influenced by oxide thickness and doping) to maintain the speed with which the transistor can be turned on and off via gate control, but thi ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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