Implantable Microimagers
... 2.1. On-chip In-vivo Microimagers We first proposed and demonstrated in vivo imaging inside the mouse brain using a microimager in our previous work [39]. The immediate application for invasive imagers is to study the dynamics of chemical reactions inside the brain. Although the level of detail offe ...
... 2.1. On-chip In-vivo Microimagers We first proposed and demonstrated in vivo imaging inside the mouse brain using a microimager in our previous work [39]. The immediate application for invasive imagers is to study the dynamics of chemical reactions inside the brain. Although the level of detail offe ...
Bourns® Rectifier Diodes
... voltage and low VF rectifier diodes have less power dissipation in the forward direction to save energy. Reverse Leakage Current (IR) is the diode's reverse leakage current, and low IR rectifier diodes have less power dissipation in the reverse direction for power reduction. Junction Capacitance (CJ ...
... voltage and low VF rectifier diodes have less power dissipation in the forward direction to save energy. Reverse Leakage Current (IR) is the diode's reverse leakage current, and low IR rectifier diodes have less power dissipation in the reverse direction for power reduction. Junction Capacitance (CJ ...
Current-voltage model of LED light sources - VBN
... lamps, using heated metal filaments to generate light, or fluorescent lamps, that use electrically excited mercury gas and phosphor to down-convert the ultraviolet radiation into visible light, are gradually being replaced by light-emitting diodes. The invention of LEDs is more than a century old, b ...
... lamps, using heated metal filaments to generate light, or fluorescent lamps, that use electrically excited mercury gas and phosphor to down-convert the ultraviolet radiation into visible light, are gradually being replaced by light-emitting diodes. The invention of LEDs is more than a century old, b ...
SIGC54T65R3E
... approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended ...
... approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended ...
Document
... The semiconductive materials used in LEDs are gallium arsenide(GaAs), galium arsenide phosphide (GaAsP), and Gallium phosphide (GaP) Silicon and Germanium are not used because they are very poor at producing light GaAs LEDs emit infrared (IR) radiation GaAsP produces either red or yellow visible lig ...
... The semiconductive materials used in LEDs are gallium arsenide(GaAs), galium arsenide phosphide (GaAsP), and Gallium phosphide (GaP) Silicon and Germanium are not used because they are very poor at producing light GaAs LEDs emit infrared (IR) radiation GaAsP produces either red or yellow visible lig ...
FAN5234 Dual Mobile-Friendly PWM / PFM Controller FA
... The synchronous buck converter can operate from an unregulated DC source (such as a notebook battery), with voltage ranging from 2V to 24V, or from a regulated system rail. In either case, the IC is biased from a +5V source. The PWM modulator uses an average-currentmode control with input voltage fe ...
... The synchronous buck converter can operate from an unregulated DC source (such as a notebook battery), with voltage ranging from 2V to 24V, or from a regulated system rail. In either case, the IC is biased from a +5V source. The PWM modulator uses an average-currentmode control with input voltage fe ...
AP7311
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
PBSS5160U 1. Product profile 60 V, 1 A PNP low V
... therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use ...
... therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use ...
AP8802 1A LED STEP-DOWN CONVERTER Description
... The AP8802 has by default open LED protection. If the LEDs should become open circuit the AP8802 will stop oscillating; the SET pin will rise to VIN and the SW pin will then fall to GND. No excessive voltages will be seen by the AP8802. If the LEDs should become shorted together the AP8802 will cont ...
... The AP8802 has by default open LED protection. If the LEDs should become open circuit the AP8802 will stop oscillating; the SET pin will rise to VIN and the SW pin will then fall to GND. No excessive voltages will be seen by the AP8802. If the LEDs should become shorted together the AP8802 will cont ...
PBSS8110Z 1. Product profile 100 V, 1 A NPN low V
... such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without fu ...
... such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without fu ...
"Super" Junction Transistors with Current Gains of 88 and Ultra-fast
... Abstract: 1200 V-Class Super-High Current Gain Transistors or SJTs developed by GeneSiC are distinguished by low leakage currents of < 100 µA at 325 °C operating temperature, turn-on and turn-off switching transients of < 15 ns at 250 °C, maximum Common Source current gains of 88 and low on-resistan ...
... Abstract: 1200 V-Class Super-High Current Gain Transistors or SJTs developed by GeneSiC are distinguished by low leakage currents of < 100 µA at 325 °C operating temperature, turn-on and turn-off switching transients of < 15 ns at 250 °C, maximum Common Source current gains of 88 and low on-resistan ...
display - Edge - Rochester Institute of Technology
... MSP430BT5190 + PAN1325) that fit specs for both cost and size. The PAN1315 was also available, however it did not come with its own antenna, and the tuning network would need to have been designed and optimized. The control circuitry was designed based on the datasheets given. Alert System The alert ...
... MSP430BT5190 + PAN1325) that fit specs for both cost and size. The PAN1315 was also available, however it did not come with its own antenna, and the tuning network would need to have been designed and optimized. The control circuitry was designed based on the datasheets given. Alert System The alert ...
FDS6994S Dual SyncFet
... MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6994S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. ...
... MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6994S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. ...
Characterization of Gallium Antimonide Grown on Semi
... refer to the variety of different structural imperfections that may be present in the crystal structure of the semiconductor material. These defects vary in type from the absence of entire rows of atoms to the presence of atoms in between lattice points in the crystal structure of the material. Imp ...
... refer to the variety of different structural imperfections that may be present in the crystal structure of the semiconductor material. These defects vary in type from the absence of entire rows of atoms to the presence of atoms in between lattice points in the crystal structure of the material. Imp ...
PAM2845
... running the sensing traces near SW Pin. 5) Place the VIN pin bypass capacitor as close to the device as possible. The ground connection of the VIN bypass capacitor should be connected directly to GND pins with a wide trace. 6) Minimize the size of the SW node while keeping it wide and short. Keep th ...
... running the sensing traces near SW Pin. 5) Place the VIN pin bypass capacitor as close to the device as possible. The ground connection of the VIN bypass capacitor should be connected directly to GND pins with a wide trace. 6) Minimize the size of the SW node while keeping it wide and short. Keep th ...
charge-coupled devices - Electrical and Computer Engineering
... One cell of a CCD would just be a MOS capacitor if its function were to just pass along the analog charges by bucket-brigade. The more general cell would be a MOS capacitor that is also light sensitive as in a photodiode (PD). As an element of a CCD the single cell would, in general, be capable of: ...
... One cell of a CCD would just be a MOS capacitor if its function were to just pass along the analog charges by bucket-brigade. The more general cell would be a MOS capacitor that is also light sensitive as in a photodiode (PD). As an element of a CCD the single cell would, in general, be capable of: ...
0563.PDF
... that the crack is mainly vertical and the added complications of crack closure and load sharing when e > 0° are not a concern. The crystals at the crack tip experience a shear stress, iz, arising from the force loading the top of the cavity and, at a slightly greater radius, an equal but opposite fo ...
... that the crack is mainly vertical and the added complications of crack closure and load sharing when e > 0° are not a concern. The crystals at the crack tip experience a shear stress, iz, arising from the force loading the top of the cavity and, at a slightly greater radius, an equal but opposite fo ...
Ideal two-dimensional electron systems with a giant Rashba
... room temperature applications since the latter require a significantly larger spin-splitting. Lately found systems that demonstrate a large spin-splitting of 2D-electron states (αR is about one order of magnitude greater than in the semiconductor 2D systems) are noble metal based Bi-surface alloys ...
... room temperature applications since the latter require a significantly larger spin-splitting. Lately found systems that demonstrate a large spin-splitting of 2D-electron states (αR is about one order of magnitude greater than in the semiconductor 2D systems) are noble metal based Bi-surface alloys ...
AP1539
... whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products ...
... whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products ...
The presence of different oxidation states of cations in optical hosts
... (d) of Co:SLGO (2 mol.%) single crystal after c-irradiation with a dose of 105 –106 Gy (b), annealing in the air for 16 h and additional annealing of the same sample in oxygen for subsequent 16 h (c) and irradiation with 1 MeV electrons with a fluency of 1017 el/cm2 (d). All these treatments were per ...
... (d) of Co:SLGO (2 mol.%) single crystal after c-irradiation with a dose of 105 –106 Gy (b), annealing in the air for 16 h and additional annealing of the same sample in oxygen for subsequent 16 h (c) and irradiation with 1 MeV electrons with a fluency of 1017 el/cm2 (d). All these treatments were per ...
G43064245
... Keywords: Fulladder, Footed diode domino logic, Pseudo dynamic logic, Ripple carry adder, Stacking effect ...
... Keywords: Fulladder, Footed diode domino logic, Pseudo dynamic logic, Ripple carry adder, Stacking effect ...
Crystal structure, electronic structure and - Research Online
... sulphide. Here, we fabricated an n-type tetradymite BiSbSTe2 by solid state reaction. The crystal structure was found to be rhombohedral, and the thermoelectric properties were measured for the temperature range of 50-390 K. A high Seebeck coefficient of -190 µV/K was achieved at 385 K. The electron ...
... sulphide. Here, we fabricated an n-type tetradymite BiSbSTe2 by solid state reaction. The crystal structure was found to be rhombohedral, and the thermoelectric properties were measured for the temperature range of 50-390 K. A high Seebeck coefficient of -190 µV/K was achieved at 385 K. The electron ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.