Download FDS6994S Dual SyncFet

FDS6994S
October 2006
FDS6994S
Dual Notebook Power Supply N-Channel PowerTrench SyncFet™
General Description
Features
The FDS6994S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6994S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
•
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.2A, 30V
RDS(on) = 15 mΩ @ VGS = 10V
RDS(on) = 17.5 mΩ @ VGS = 4.5V
•
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Q1:
Optimized for low switching losses
Low gate charge (85.5 nC typical)
6.9A, 30V
RDS(on) = 21 mΩ @ VGS = 10V
RDS(on) = 26 mΩ @ VGS = 4.5V
D1
D1
4
5
D2
Q1
6
D2
3
2
7
SO-8
S2
G2
S1
G1
Absolute Maximum Ratings
Symbol
8
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
Q2
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
PD
(Note 1a)
Q1
Units
30
30
±16
8.2
30
±16
6.9
20
V
V
A
2
1.6
1
0.9
-55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
1
TA = 25°C unless otherwise noted
Parameter
VDSS
VGSS
Q2
Operating and Storage Junction Temperature Range
W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6994S
FDS6994S
13”
12mm
2500 units
2006 Fairchild Semiconductor Corporation
FDS6994S Rev C2(W)
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
On Characteristics
VGS = ±16 V, VDS = 0 V
Q2
Q1
Q2
Q1
Q2
Q1
All
30
30
V
23
24
mV/°C
500
1
±100
µA
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
RDS(on)
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 250 uA
ID = 1 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
ID(on)
On-State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 µA
ID = 1 mA, Referenced to 25°C
ID = 250 uA, Referenced to 25°C
VGS = 10 V, ID = 8.2A
VGS = 10 V, ID = 8.2 A, TJ = 125°C
VGS = 4.5 V, ID = 7.6 A
VGS = 10 V, ID = 6.9 A
VGS = 10 V, ID = 6.9 A, TJ = 125°C
VGS = 4.5 V, ID = 6.2 A
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 8.2 A
VDS = 10 V, ID = 6.9 A
Q2
Q1
Q2
Q1
Q2
1
1
Q1
Q2
Q1
Q2
Q1
1.5
1.9
–2
–5
10
15
11
16
24
19
3
3
V
mV/°C
15
24
17.5
21
33.5
26
30
20
42
41
mΩ
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
2815
800
540
205
210
90
2.844444.9
2.6
4.6
pF
pF
pF
Ω
FDS6994S Rev C2(W)
FDS6994S
Electrical Characteristics
Electrical Characteristics
Symbol
Parameter
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Type Min
Typ
Max Units
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
Q2:
VDS = 15 V, ID = 7.9 A, VGS = 5 V
Q1:
VDS = 15 V, ID = 6.5 A, VGS = 5 V
Gate-Drain Charge
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
11
11
8
7
50
27
17
4
25
8
6
3
7
3
20
20
16
14
80
43
31
8
35
12
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
tRR
Reverse Recovery Time
QRR
Reverse Recovery Charge
tRR
Reverse Recovery Time
IF = 8.2 A,
diF/dt = 300 A/µs
(Note 3)
IF = 6.9 A,
diF/dt = 100 A/µs
(Note 3)
QRR
Reverse Recovery Charge
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
(Note 2)
Q2
Q1
Q2
2.3
1.3
A
25
ns
19
nC
ns
Q2
23
Q2
Q1
10
0.4
0.53
nC
7
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
mounted on a
2
0.5in pad of 2
oz copper
b)
125°C/W when
mounted on a
2
0.02 in pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6994S Rev C2(W)
FDS6994S
Typical Characteristics for Q2
1.6
30
3.5V
4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10V
3.0V
20
2.5V
10
0
0
0.5
1
1.5
1.4
VGS = 3.0V
3.5V
1.2
4.0V
4.5V
6.0V
10V
1
0.8
2
0
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
0.035
ID = 4.1A
ID = 8.2A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
0.03
0.025
0.02
TA = 125oC
0.015
TA = 25oC
0.01
0.005
125
0
2
o
TJ, JUNCTION TEMPERATURE ( C)
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
10
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
25
ID, DRAIN CURRENT (A)
20
ID, DRAIN CURRENT (A)
20
15
TA = 125oC
10
25oC
5
-55oC
VGS = 0V
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.1
0.2
0.3
0.4
0.5
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6994S Rev C2(W)
FDS6994S
Typical Characteristics for Q2
4000
VDS = 10V
ID =8.2A
f = 1MHz
VGS = 0 V
15V
8
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
4
3000
Ciss
2000
1000
Coss
2
Crss
0
0
0
10
20
30
40
50
0
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
15
20
25
30
Figure 8. Capacitance Characteristics.
50
P(pk), PEAK TRANSIENT POWER (W)
100
RDS(ON) LIMIT
100µs
1ms
10ms
100ms
10
1s
1
10s
DC
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
0.1
TA = 25oC
0.1
1
10
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
100
0.01
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 135 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6994S Rev C2(W)
FDS6994S
Typical Characteristics for Q1
2.2
20
ID, DRAIN CURRENT (A)
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
3.5V
15
10
3.0V
5
0
2
1.8
VGS = 3.5V
1.6
1.4
4.0V
4.5V
1.2
6.0V
10V
1
0.8
0
0.5
1
1.5
2
0
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
20
0.075
ID = 6.9A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
15
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.6
-50
ID = 3.5A
0.05
TA = 125oC
0.025
TA = 25oC
0
-25
0
25
50
75
100
125
150
2
4
o
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
20
IS, REVERSE DRAIN CURRENT (A)
100
VDS = 5V
ID, DRAIN CURRENT (A)
10
ID, DRAIN CURRENT (A)
15
25oC
10
TA = 125oC
-55oC
5
0
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55°C
0.01
0.001
0.0001
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6994S Rev C2(W)
FDS6994S
Typical Characteristics Q1
1200
VDS = 10V
ID = 6.9A
15V
4
f = 1 MHz
VGS = 0 V
1000
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
20V
3
2
800
Ciss
600
400
Coss
1
200
Crss
0
0
2
4
6
8
0
10
0
5
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
20
25
30
50
P(pk), PEAK TRANSIENT POWER (W)
100µs
10
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
0.1
TA = 25oC
0.01
0.01
0.1
1
10
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
30
20
10
0
0.001
100
0.01
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
15
Figure 18. Capacitance Characteristics.
100
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
0.1
RθJA = 135oC/W
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6994S Rev C2(W)
FDS6994S
Typical Characteristics (continued)
This section copied from FDS6984S datasheet
SyncFET Schottky Body Diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
3A/DIV
IDSS, REVERSE LEAKAGE CURRENT (A)
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 22 shows the
reverse recovery characteristic of the FDS6994S.
0.1
125oC
0.01
0.001
o
25 C
0.0001
0.00001
0
10
20
30
VDS, REVERSE VOLTAGE (V)
Figure 24. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/DIV
Figure 22. FDS6994S SyncFET body diode
reverse recovery characteristic.
3A/DIV
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
0V
10nS/DIV
Figure 23. Non-SyncFET (FDS6690A) body
diode reverse recovery characteristic.
FDS6994S Rev C2(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
FRFET™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
UltraFET®
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20