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Technologies for Seventh Generation High Performance, High Ruggedness Power Chips
Technologies for Seventh Generation High Performance, High Ruggedness Power Chips

... essential to enhance the performance of Insulate Gate Bipolar Transistors (IGBTs) and diodes, both mounted on the power modules. Since the late 1980s, Mitsubishi Electric has been developing low-loss structures for IGBTs such as by fine pattern processing and the CSTBTTM(1-2). Diode performance has ...
BDTIC
BDTIC

... For ESD protection in RF application it is mandatory to keep the ESD diode capacitance as small as possible. This avoids a de-tuning of input matching structure and the protection device will create less harmonic distortion.The principle of minimizing the ESD diode´s capacitance is explained for a u ...
Lab #11 Diodes - Northern Arizona University
Lab #11 Diodes - Northern Arizona University

... Light emitting diodes (LED) are diodes that emit light when they reach their turn-on voltage. Perform the same procedure to determine the anode and cathode terminals of an LED and the turn-on voltage. 1. Obtain any color LED. Note that the turn-on voltage (generally 1.5 to 2.2 V) is higher than befo ...
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XRD and FT-IR Studies on Lead (II) Nitrate doped Histidine Picrate
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... CMOS and TTL logic circuits. The chart below briefly compares the capabilities of the TTL and CMOS families of IC. Correct interfacing will ensure successful completion of your practical project if it involves these families of logic gates. ...
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... directional diode will start to clip the signal which leads to additional losses and harmonic generation. Nevertheless, unidirectional diodes clamp positive and negative ESD strikes as well as bidirectional diodes. Bi-directional and symmetric TVS diodes have nearly symmetric working voltage for bot ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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