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MWPR1516 16 KB Flash - Freescale Semiconductor
MWPR1516 16 KB Flash - Freescale Semiconductor

AP358  LOW POWER DUAL OPERATIONAL AMPLIFIERS Description
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... inputs, and remain in the linear mode with an input common-mode voltage of 0 VDC. These amplifiers operate over a wide range of power supply voltage with little change in performance characteristics. At 25°C amplifier operation is possible down to a minimum supply voltage of 2.3 VDC. Precautions sho ...
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... Drain-source on-state resistance, RDS(ON) (I). • It is one of the most important characteristics in a power MOSFET. The lower, the better. • For a given device, its on-resistance decreases with the gate voltage, at least until this voltage reaches a specific value. • Power MOSFETs typically increas ...
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... Since IB is usually much larger than ICO, hence IC  IB. The proportionality constant  is known as the large-signal current gain (or dc current gain), and is usually designated by hFE in commercial device data sheet.   hFE = IC / IB An AC signal usually swings between positive voltage and negati ...
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... Since IB is usually much larger than ICO, hence IC  IB. The proportionality constant  is known as the large-signal current gain (or dc current gain), and is usually designated by hFE in commercial device data sheet.   hFE = IC / IB An AC signal usually swings between positive voltage and negati ...
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... warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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