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2013` Professional Plastics Semiconductor Materials Brochure
2013` Professional Plastics Semiconductor Materials Brochure

lecture13&14
lecture13&14

ZABG6002
ZABG6002

... Drain voltages of amplifier stages are set at 2.0V and mixer stages at 0.3V. The drain supplies are current limited to approximately 5% above the operating currents set by their associated Rcal resistors. As an additional feature the Rcal pins can also be used as logic inputs to disable pairs of FET ...
Lamellar K2Co3(P2O7)2·2H2O nanocrystal whiskers_ High
Lamellar K2Co3(P2O7)2·2H2O nanocrystal whiskers_ High

http://kth.diva
http://kth.diva

AL8805 Description Pin Assignments
AL8805 Description Pin Assignments

... A value of 1μF will reduce the supply ripple current by a factor three (approx.). Proportionally lower ripple can be achieved with higher capacitor values. Note that the capacitor will not affect operating frequency or efficiency, but it will increase start-up delay, by reducing the rate of rise of ...
NB7N017MEVB NB7N017M Evaluation Board User's Manual •
NB7N017MEVB NB7N017M Evaluation Board User's Manual •

... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any partic ...
AP3154A
AP3154A

... Lead Free Finish / RoHS Compliant (Note 1) ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)

In-System Programming (ISP)
In-System Programming (ISP)

... Low-power flash devices support on-chip charge pumps, and therefore require only a single 3.3 V programming voltage for the VPUMP pin during programming. When the device is not being programmed, the VPUMP pin can be left floating or can be tied (pulled up) to any voltage between 0 V and 3.6 V2. Duri ...
FSQ0565RS/RQ Green-Mode Fairchild Power Switch (FPS™) for Quasi-Resonant Operation -
FSQ0565RS/RQ Green-Mode Fairchild Power Switch (FPS™) for Quasi-Resonant Operation -

... Pin Definitions Pin # ...
AP7365  600mA, LOW QUIESCENT CURRENT, FAST TRANSIENT LOW DROPOUT LINEAR REGULATOR
AP7365 600mA, LOW QUIESCENT CURRENT, FAST TRANSIENT LOW DROPOUT LINEAR REGULATOR

... Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the heat dissipation of the regulator, protecting it from damage due to overheating. ...
Chapter 2 Thyristor
Chapter 2 Thyristor

... p-layer under the gate. Some of these electrons do not recombine and escape to the underlying n-region (step 2). This in turn lowers the potential of the n-region, acting as the base of a pnp transistor which switches on (turning the transistor on without directly lowering the base potential is call ...
SIGC39T60E
SIGC39T60E

... warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information ...
Monolithic Microwave Integrated Circuits (MMIC)
Monolithic Microwave Integrated Circuits (MMIC)

... existing products, but also, importantly, allows the creation of completely new products and new markets. • Microengineering is already established in the sensor market, providing large volumes of low cost sensors to the automotive industry, and low volume high performance, small and light weight se ...
Cryogenic Power Electronics
Cryogenic Power Electronics

... • For turn on and turn off it must require  A low gate drive power tending to 0  A low gate drive voltage tending to 0  A low gate drive current tending to 0 • Both turn-on and turn-off must be controllable. Thus, it must turn on with a gate signal and must turn off with another gate signal • For ...
PIN, Limiter, Schottky, Varactor Diodes
PIN, Limiter, Schottky, Varactor Diodes

Interface Protection for HDMI
Interface Protection for HDMI

IGC89T170S8RM
IGC89T170S8RM

... approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended ...
AN-3004 - Fairchild
AN-3004 - Fairchild

... Once triggered, the detector stays latched in the "on state" until the current flow through the detector drops below the holding current (IH) which is typically 100 µA. At this time, the detector reverts to the "off" (non-conducting) state. The detector may be triggered "on" not only by IFT but also ...
Digital Systems Topic 2:  Logic Gates and Families: Definitions and Characteristics
Digital Systems Topic 2: Logic Gates and Families: Definitions and Characteristics

FAN25800 500 mA, Low-I , Low-Noise, LDO Regulator
FAN25800 500 mA, Low-I , Low-Noise, LDO Regulator

... Capacitors should be placed as close to the IC as possible. All power and ground pins should be routed to their capacitors using top copper. The copper area connecting to the IC should be maximized to improve thermal performance. ...
Discretes – Explanations – Thyristors / Diodes
Discretes – Explanations – Thyristors / Diodes

... Over-current and short circuit protection If short circuit protection is required for the diodes [thyristors], (ultra fast) semiconductor fuses are used. These are to be dimensioned on the basis of the forward current and i2t value. Other types of protection for high current circuits are, for exampl ...
Integrated 50-GHz SiGe Sub-Harmonic Mixer/Downconverter Quadrature Ring An with
Integrated 50-GHz SiGe Sub-Harmonic Mixer/Downconverter Quadrature Ring An with

... mixer is the use of anti-parallel diode pairs [4]. Unfortunately, this technique does not provide any conversion gain. At millimeterwave frequencies, high gain is difficult to obtain and hence a passive mixer can reduce the sensitivity of the receiver. One technique to obtain sub-harmonic mixing wit ...
High-speed optical modulation based on carrier depletion in a
High-speed optical modulation based on carrier depletion in a

... growth process and is used for pn junction formation and electrical contact. The p-doping concentration is ~1.5x1017 cm-3, and the n-doping concentration varies from ~3x1018 cm-3 near the top of the cap layer to ~1.5x1017 cm-3 at the pn junction. To insure good Ohmic contact between silicon and meta ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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