Real-Time
... (a) Depletion Vth >VG > 0. (b) Inversion VG >Vth > 0. a) Depletion Inversion Fig. 2. Charging diagrams of the n-channelb) MOSFET ...
... (a) Depletion Vth >VG > 0. (b) Inversion VG >Vth > 0. a) Depletion Inversion Fig. 2. Charging diagrams of the n-channelb) MOSFET ...
SPF-2000 数据资料DataSheet下载
... infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time with ...
... infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time with ...
IGC06R60DE TRENCHSTOP RC-Series for hard switching applications
... approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended ...
... approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended ...
ZXLD1322
... The ZXLD1322 is an inductive DC-DC converter, with an internal switch, designed for driving single or multiple LEDs in series up to a total of 700mA output current. Applications cover input voltages ranging from 2.5V to 15V. Depending upon supply voltage and external components, this can provide up ...
... The ZXLD1322 is an inductive DC-DC converter, with an internal switch, designed for driving single or multiple LEDs in series up to a total of 700mA output current. Applications cover input voltages ranging from 2.5V to 15V. Depending upon supply voltage and external components, this can provide up ...
chapter 18-electricity
... As electrons approach the ground, positive charges quickly flow upward, making an electric connection between the cloud and the ground. You see this electric discharge as lightning. ...
... As electrons approach the ground, positive charges quickly flow upward, making an electric connection between the cloud and the ground. You see this electric discharge as lightning. ...
AP3105NA/NV/NL/NR Description Pin Assignments
... application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of s ...
... application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of s ...
PAM8603A
... needed to couple in low frequencies without severe attenuation. But in many cases the speakers used in portable systems, whether internal or external, have little ability to reproduce signals below 100Hz to 150Hz. Thus, using a large input capacitor may not increase actual system performance. In thi ...
... needed to couple in low frequencies without severe attenuation. But in many cases the speakers used in portable systems, whether internal or external, have little ability to reproduce signals below 100Hz to 150Hz. Thus, using a large input capacitor may not increase actual system performance. In thi ...
SIGC16T120C IGBT Chip in NPT-technology
... warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ...
... warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ...
SIGC25T120C IGBT Chip in NPT-technology
... warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ...
... warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ...
Zener Diode
... increases, drawing more current away from the Zener. Less current burning through the Zener, bringing it closer to the knee of its I-V curve. ...
... increases, drawing more current away from the Zener. Less current burning through the Zener, bringing it closer to the knee of its I-V curve. ...
ELECTRIC CURRENT
... 1. Observing Describe the galvanometer reading when the leads were brought in contact with the coins. What happened when the leads were reversed? 2. Predicting What do you think would happen if a number of these dime-and-penny cells were connected in series? (That is, placed end to end with dimes to ...
... 1. Observing Describe the galvanometer reading when the leads were brought in contact with the coins. What happened when the leads were reversed? 2. Predicting What do you think would happen if a number of these dime-and-penny cells were connected in series? (That is, placed end to end with dimes to ...
A BICMOS logic circuit with a CML output
... (Vcc - VBE) for a logic high voltage, and (Vcc 2VBE) for a logic low voltage, where VBE is the forward biased base-emitter diode voltage drop of a corresponding bipolar transistor. In order to provide the logic high voltage (Vcc - VBE), however, an extra transistor is necessary. A similar type of lo ...
... (Vcc - VBE) for a logic high voltage, and (Vcc 2VBE) for a logic low voltage, where VBE is the forward biased base-emitter diode voltage drop of a corresponding bipolar transistor. In order to provide the logic high voltage (Vcc - VBE), however, an extra transistor is necessary. A similar type of lo ...
AZV331 Description Pin Assignments
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
ppt - EC - Unit 1 - Transistor, UJT, SCR
... rises, which in turn causes collector current to increase. This may lead to more power dissipation & further increase in temperature & subsequent increase in collector current. If this cycle continues, it may result in permanent damage to the transistor. This phenomenon is known as “Thermal Runaway” ...
... rises, which in turn causes collector current to increase. This may lead to more power dissipation & further increase in temperature & subsequent increase in collector current. If this cycle continues, it may result in permanent damage to the transistor. This phenomenon is known as “Thermal Runaway” ...
AP7175 Description Pin Assignments
... stability, a bypass capacitor can be connected in parallel with R1. (optional in typical application circuit) ...
... stability, a bypass capacitor can be connected in parallel with R1. (optional in typical application circuit) ...
IM34 Converters
... The IM34 will convert a 2, 3 or 4-wire RTD, mV signal, or T/C in a hazardous area, to an analog 4/20 mA signal in a non-hazardous area. This pushbutton or software (FDT/DTM, free shareware) configurable unit is simple to use and saves time and money on installations. This diverse unit allows several ...
... The IM34 will convert a 2, 3 or 4-wire RTD, mV signal, or T/C in a hazardous area, to an analog 4/20 mA signal in a non-hazardous area. This pushbutton or software (FDT/DTM, free shareware) configurable unit is simple to use and saves time and money on installations. This diverse unit allows several ...
IL255 Optocoupler, Phototransistor Output, AC Input, With Base
... Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use ...
... Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use ...
Guidance on RCD`s
... Portable RCDs incorporate a plug-pin portion and may have either a socket-outlet portion or may include terminals for external flexible cords, where appropriate. It should be noted that such RCDs do not form part of the fixed electrical installation. Such RCDs have a rated voltage not exceeding 250 ...
... Portable RCDs incorporate a plug-pin portion and may have either a socket-outlet portion or may include terminals for external flexible cords, where appropriate. It should be noted that such RCDs do not form part of the fixed electrical installation. Such RCDs have a rated voltage not exceeding 250 ...
R.M.A. Dawson, M.H. Lu, J.C. Sturm et al, "Impact of transient response of organic light emitting diodes on the design of active matrix OLED displays," Tech. Dig. Int. Elec. Dev. Mtg., pp. 875-878 (1998).
... When the OLED is driven in the mode shown in Fig. lA, the parallel capacitance is quickly charged and discharged by the voltage source, so it does not significantly affect the voltage level across the diode. This implies that when the OLED is first tumed on, a large current flows to charge the paral ...
... When the OLED is driven in the mode shown in Fig. lA, the parallel capacitance is quickly charged and discharged by the voltage source, so it does not significantly affect the voltage level across the diode. This implies that when the OLED is first tumed on, a large current flows to charge the paral ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.