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AP3776 N E W P R O D U C T Description Features Pin
AP3776 N E W P R O D U C T Description Features Pin

... Pulse Frequency Modulation (PFM) method to build discontinuous conduction mode (DCM) flyback power supplies. ...
Safer Electro Play ELECTRICAL TERMS
Safer Electro Play ELECTRICAL TERMS

FMA4A
FMA4A

... No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products" ...
Lecture 1
Lecture 1

Slide 1
Slide 1

... through three times, at an angle 35.26 away from normal, and spread out 120 on the azimuth. The resulting criss-cross holes below the surface of the slab produces a full three dimensional FCC structure. The drilling can be done by a real drill bit for microwave work, or by reactive ion etching to cr ...
IGC168T170S8RH
IGC168T170S8RH

... approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended ...
A photonic band gap (PBG)
A photonic band gap (PBG)

... through three times, at an angle 35.26 away from normal, and spread out 120 on the azimuth. The resulting criss-cross holes below the surface of the slab produces a full three dimensional FCC structure. The drilling can be done by a real drill bit for microwave work, or by reactive ion etching to cr ...
Photonic Band Gap Crystals
Photonic Band Gap Crystals

... through three times, at an angle 35.26 away from normal, and spread out 120 on the azimuth. The resulting criss-cross holes below the surface of the slab produces a full three dimensional FCC structure. The drilling can be done by a real drill bit for microwave work, or by reactive ion etching to cr ...
Design for Testability Guidelines
Design for Testability Guidelines

First xSi cell results using selective emitters formed with diffusion
First xSi cell results using selective emitters formed with diffusion

... A simple and robust selective emitter process is described which uses a selectively screen-printed diffusion barrier layer, deposited before phosphorus diffusion. The method enables an efficiency increase with more than 0.4%, and is suitable for large scale production processes. Introduction The sel ...
The development of a light sensitive matrix for computer graphics.
The development of a light sensitive matrix for computer graphics.

FDS6982AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET
FDS6982AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET

... unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated ...
CAPACITOR VARABILITY
CAPACITOR VARABILITY

... Voltage Modulation MOS • The capacitance varies only slightly as the MOS capacitor goes into reverse-bias • The capacitance goes less than 20% and holds as a forward-bias voltage is applied • The capacitance will restore at higher bias if source and drain are connected to the ...
IGC168T170S8RM
IGC168T170S8RM

... approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended ...
microelectronics
microelectronics

Progress in high-power high-efficiency VCSEL arrays [7229-2]
Progress in high-power high-efficiency VCSEL arrays [7229-2]

... is used for the N-contact of the arrays. Then, an AlGaAs N-type high-reflectivity distributed Bragg reflector (DBR) follows. The active region consists of InAlGaAs strained quantum wells designed for 808nm emission, and is followed by P-type DBR output mirror, whose reflectivity is optimized for max ...
Implementation of Ternary Logic Circuits
Implementation of Ternary Logic Circuits

... However, theory also predicts several disadvantages of using MVL circuits. 1) For fixed values of the highest and the lowest voltages, the tolerances of the MVL circuits with more logic levels will be more critical than the binary circuits. 2) To realize low-output impedance, additional sources of p ...
IOSR Journal of Applied Physics (IOSR-JAP)
IOSR Journal of Applied Physics (IOSR-JAP)

MC145026, MC145027, MC145028
MC145026, MC145027, MC145028

Crystal Oscillator Design And Negative Resistance
Crystal Oscillator Design And Negative Resistance

AP1694A Description Features
AP1694A Description Features

... When the output is shorted, the output voltage will be clamped at 0. At this condition, VCC will drop down without auxiliary winding for power supply. And the VCC will drop to UVLO threshold voltage, the IC will shut down and restart a new operating cycle, and the V CC is charged by startup resistan ...
1-Wire Protocol
1-Wire Protocol

...  each 1-Wire slave has stored in ROM a unique 64-bit serial number that acts as its node address  device to be individually selected from among many that can be connected to the same bus wire o This globally unique address is composed of eight bytes divided into three main sections. Starting with ...
AP7332
AP7332

... the baseband circuitry into standby mode in between transmit cycles. In baseband circuits, the load often transitions virtually instantaneously from 100µA to 100mA. To meet this load requirement, the LDO must react very quickly without a large voltage drop or overshoot — a requirement that cannot be ...
FSA66 Low-Voltage UHS Single SPST Normally Open Analog Switch FSA66  Low-V
FSA66 Low-Voltage UHS Single SPST Normally Open Analog Switch FSA66 Low-V

... ■ Space-saving SOT23 or SC70 5-lead package ...
Deney2
Deney2

... the current in the diode and the voltage applied to diode is called the i-v characteristics of diode and graph of i-v characteristics of pn junction diode is shown in Fig.1b.The pn junction diode’s i-v characteristics is not linear as seen from its graph. As the voltage increases above zero, the cur ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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