Download PDF: 44.7MB

MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
FEATURED PRODUCTS TECHNOLOGY AND TREND
Featured Products Technology and Trend
The IGBT and IPM products in this
data book feature the 3rd Generation H-Series IGBT chip and a new
generation free-wheel diode. A
brief description of this technology
and trend follows.
Third Generation H-series IGBT
Figure I.1 Comparison of Cell Dimensions (Normalized) and
IGBT Cell Cross Section
Mitsubishi Electric through a process of continuous improvement
and new development strategy designed to meet existing and future
customer requirements developed
and introduced the H-Series IGBT
to the market in the 4th quarter
of 1992.
The Mitsubishi third generation
IGBT module realizes significantly
improved switching and conduction losses over
second generation (E-Series)
devices. The on-state voltage was
lowered by using advanced
processing techniques such as
shallow diffusion, reduced cell
size, and optimized layout. A new
cell pattern was developed in order to maintain the same short circuit durability as E-Series devices.
Figure I.1 is a comparison of the
second and third generation IGBT
cell dimensions. Figure I.2 shows
the newly developed cell pattern.
The improved saturation voltage
versus fall time characteristic of
the new device is shown in
Figure I.3.
value exhibited by the E-Series
diode. The recovery time (trr) and
peak recovery current (Irr) have
been cut in half.
H-Series IGBT in hard switching
applications. The total reverse
recovery charge (Qrr) of the new
diode is less than one fourth of the
Emitter
Gate
RMOS
p
RJFE
n+
Lch
Lch
Lpb
Lp-p
Lp-p/2
LpB/2
Type-1
Conventional
1.0
1.0
1.0
Type-2
New Generation
0.3
0.5
1.4
Rdrift
n–
n+
p+
Collector
Figure I.2 New Pattern for Cell Surface Region
Poly-Si
I-I Cross-Section
I
I
II
II
n+
n+
P
A
II-II Cross-Section
In order to further reduce switching
losses, a new free-wheel diode
was developed for the H-Series
IGBT module. The new diode is a
fast, soft recovery device
optimized for operation with the
P+ Region
B
n+
P+
P
n+ Emitter
Sep.1998
MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
FEATURED PRODUCTS TECHNOLOGY AND TREND
The H-Series IGBT family featured
in this publication is the 3rd
Generation of IGBT development.
It is now in widespread use as the
preferred IGBT product on the
market. However, the fine pattern
and shallow surface diffusion
technologies responsible for the
features that make the H-Series
a market leading technology are
now near their limit.
A new IGBT architecture in which
the MOS transistor is formed on
the wall of a deep, narrow trench
is expected to achieve the next
performance breakthrough.
Figure I.4 provides a glance at
the output characteristics of the
trench IGBT.
The trench IGBT output characteristics approach those of a diode
and offer the promise of on-state
loss reduction providing ample
potential for future miniaturization.
Figure I.3 Improved Saturation Voltage vs. Fall Time Characteristics
3.0
SECOND GENERATION IGBT
VCE(sat), (V) (IC= 100A,Tj = 25°C)
IGBT Module Future Trend
2.5
NEW H-SERIES IGBT
2.0
1.5
100
200
300
400
600
Figure I.4 Output Characteristics of a Trench IGBT,
Planar IGBTs and a Diode
400
DIODE
TRENCH IGBT
Vg = +15V
Tj = 25°C
PLANAR IGBT
(3rd GEN.)
JC (A/cm2)
For the first time 250V IGBT
modules using this new
structure are presented in
this data book. The new IGBTs
have an on-state voltage of
1.2V at rated current.
500
tf, (ns)
(RESISTIVE LOAD IC = 100A, VGE = ± 15V, Tj = 25°C)
200
PLANAR IGBT
(2nd GEN.)
100
0
VCE
500mV/div
Sep.1998
MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
FEATURED PRODUCTS TECHNOLOGY AND TREND
IPM Future Trend
In the future, the IPM is expected
to grow extensively covering a very
wide portion of the power and
function integration plane as
shown in Figure I.5. However, in
order to achieve this expansion,
we must have future advancement
in IPM support technologies. Areas
such as the trench IGBT power
chip, the IC including the LSI,
processing, packaging, system
simulation, testing and software
need addressed. Advancement
of these core technologies is
expected to enhance IPM growth
in two directions:
1. Growth toward a high power/
high performance region where
the IPM would feature further
performance enhancement
of their integrated power
elements.
2. Growth toward a high volume
low-power/multi-functionality
region, where the increased
use of inverters is expected
to become essential, as a
growing need for energy
conservation is required.
In the high power area, the IPM
technology is expected to grow
extensively by combining MOS
gated switches (primarily IGBT)
with a dedicated control and
protection system. This will allow
for extracting the optimum performance from the MOS gated
switch.
Figure I.5 Power vs. Integrated Function for Various Devices
LOW POWER SYSTEM INTEGRATED IPM (2nd GEN.)
LOW POWER APPLICATION SPECIFIC IPM (1st GEN.)
IPM (PRESENT)
CONVERTER
INVERTER
DISCRETE POWER DEVICES
SENSE
ac
M
1000
SENSOR
NEW GEN.
HIGH POWER IPMs
APPLICATIONS SYSTEM RATING (kW)
100
DRIVE &
PROTECTION
PRESENT GEN. IPMs
CONTROL
SUPPLY
10
1
ISOLATION
CONTROL CIRCUIT
(CPU, GATE ARRAY, etc.)
SYSTEM INTEGRATED IPMs
FOR LOW POWER RANGE
0.1
0.01
SMALL
SIGNAL
TRANSISTOR
IC
LSI
SWITCHING
FUNCTION
ANALOG
FUNCTION
DIGITAL
FUNCTION
0.001
FUNCTION (INTEGRATION LEVEL)
Sep.1998
MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
FEATURED PRODUCTS TECHNOLOGY AND TREND
Figure I.6 shows a proposed
concept for future high power
IPMs. This proposed concept
would employ new technologies
to allow IPMs to be applied in
applications currently served by
large capacity devices such as
GTOs and thyristors.
Figure I.6 Proposed Concept for Future High Power IPM (1500 - 4500V, 200 - 1200A)
C
SUPPLY
FAILURE
DETECT
VCC
lc
OV DETECT
& CLAMPING
CONT. SUPPLY
DRIVE
INTERFACING
& FAULT DIAGNOSIS
COM
ON/OFF
CONTROL
REAL TIME
SC CONTROL
COMP
REF
TEMP.
SENSE
le
E
EMITTER CONTACT
METAL
OXIDE
E
GATE
POLYSILICON
C
CANCELLING
MUTUAL EFFECT
p BASE
MULTI-LAYER PCB
MOUNTING CONTROL CIRCUIT
WITH PROPER SHEILDING
POWER ELECTRODE ORIENTATION
FOR MINIMIZING LEAKAGE
INDUCTANCE
n COLLECTOR
n BUFFER
p COLLECTOR
COLLECTOR METAL
HIGH VOLTAGE IGBT ELEMENT
CELL CROSS-SECTION
Sep.1998