AP1084
... in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effective ...
... in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effective ...
Single Photon Avalanche Diodes: Towards the Large Bidimensional Arrays
... electrons or holes from trap levels located in the depletion layer. In order to satisfy (ii) and (iii) prescriptions, both the effects of thermal carrier generation and trapping should be minimized. A complete characterization of the SPAD device require an estimation of some important figures of mer ...
... electrons or holes from trap levels located in the depletion layer. In order to satisfy (ii) and (iii) prescriptions, both the effects of thermal carrier generation and trapping should be minimized. A complete characterization of the SPAD device require an estimation of some important figures of mer ...
PAM8610 Description Features Pin Assignments Applications
... To achieve good heat, the PCB’s copper plate should be thicker than 0.035mm and both sides of the PCB should be utilized for heat sink. The thermal pad on the bottom of the device should be soldered to the plate of the PCB, and via holes, usually 9 to 16, should be drilled in the PCB area under the ...
... To achieve good heat, the PCB’s copper plate should be thicker than 0.035mm and both sides of the PCB should be utilized for heat sink. The thermal pad on the bottom of the device should be soldered to the plate of the PCB, and via holes, usually 9 to 16, should be drilled in the PCB area under the ...
High Speed Digital Video
... ESD Protection for High Speed Digital Video Solutions (DVI & HDMI) High speed, uncompressed, digital video solutions such as Digital Visual Interface (DVI) and High Definition Multimedia Interface (HDMI) utilize small geometry CMOS processes in order to provide maximum performance in a small package ...
... ESD Protection for High Speed Digital Video Solutions (DVI & HDMI) High speed, uncompressed, digital video solutions such as Digital Visual Interface (DVI) and High Definition Multimedia Interface (HDMI) utilize small geometry CMOS processes in order to provide maximum performance in a small package ...
Chalcogenide glass microphotonics: Stepping into the spotlight
... mechanical robustness, large coefficient of thermal expansion (CTE) mismatch with semiconductor substrates, toxicity of glass constituents elements (in particular arsenic), and long-term chemical and structural stability are other common concerns. Indeed, integrated ChG photonic devices made their d ...
... mechanical robustness, large coefficient of thermal expansion (CTE) mismatch with semiconductor substrates, toxicity of glass constituents elements (in particular arsenic), and long-term chemical and structural stability are other common concerns. Indeed, integrated ChG photonic devices made their d ...
Introduction The ability to use electrical energy to do work has
... considered the top of a water tower where all the electrons have accumulated and are ready to flow down a wire. Seafloor Spreading In Have fun learning Geophysical The Atlantic Ocean ...
... considered the top of a water tower where all the electrons have accumulated and are ready to flow down a wire. Seafloor Spreading In Have fun learning Geophysical The Atlantic Ocean ...
AP7313
... to cool down. When the junction temperature reduces to approximately +125°C the output circuitry is enabled again. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the heat dissipation of the regulat ...
... to cool down. When the junction temperature reduces to approximately +125°C the output circuitry is enabled again. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off. This cycling limits the heat dissipation of the regulat ...
ZXSC410/ZXSC420/ZXSC440 Description Pin Assignments
... The choice of switching transistor has a major impact on the converter efficiency. For optimum performance, a bipolar transistor with low VCE(SAT) and high gain is required. The VCEO of the switching transistor is also an important parameter as this sees the full output voltage when the transistor i ...
... The choice of switching transistor has a major impact on the converter efficiency. For optimum performance, a bipolar transistor with low VCE(SAT) and high gain is required. The VCEO of the switching transistor is also an important parameter as this sees the full output voltage when the transistor i ...
Paper Title
... different wavelengths, namely: 473 nm (LaserCompact LCS-DTL-166QA DPSS laser doubled with a Raicol PPKTP elemnt), 532 nm (LaserCompact LCS-DTL-112QT DPSS laser), 633 nm (He-Ne laser), 946 nm (LaserCompact LCS-DTL-166QA DPSS laser), 1064 nm (LaserCompact LCS-DTL-112QT DPSS laser without a frequency d ...
... different wavelengths, namely: 473 nm (LaserCompact LCS-DTL-166QA DPSS laser doubled with a Raicol PPKTP elemnt), 532 nm (LaserCompact LCS-DTL-112QT DPSS laser), 633 nm (He-Ne laser), 946 nm (LaserCompact LCS-DTL-166QA DPSS laser), 1064 nm (LaserCompact LCS-DTL-112QT DPSS laser without a frequency d ...
PHE13005X 1. Product profile Silicon diffused power transistor
... products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Li ...
... products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Li ...
ML145170 - Lansdale Semiconductor
... • Operating Temperature Range: TA = –40º to +85º C • Maximum Operating Frequency: 185 MHz @ Vin = 500 mVpp, 4.5 V Minimum Supply 100 MHz @ Vin = 500 mVpp, 3.0 V Minimum Supply • Operating Supply Current: ...
... • Operating Temperature Range: TA = –40º to +85º C • Maximum Operating Frequency: 185 MHz @ Vin = 500 mVpp, 4.5 V Minimum Supply 100 MHz @ Vin = 500 mVpp, 3.0 V Minimum Supply • Operating Supply Current: ...
NCP139 - 1 A, Very Low Dropout Bias Rail CMOS Voltage
... in the specified range. In applications where no low input supplies impedance available (PCB inductance in VIN and/or VBIAS inputs as example), the recommended CIN = 1 mF and CBIAS = 0.1 mF or greater. Ceramic capacitors are recommended. For the best performance all the capacitors should be connecte ...
... in the specified range. In applications where no low input supplies impedance available (PCB inductance in VIN and/or VBIAS inputs as example), the recommended CIN = 1 mF and CBIAS = 0.1 mF or greater. Ceramic capacitors are recommended. For the best performance all the capacitors should be connecte ...
TGA4532-SM 数据资料DataSheet下载
... herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for ...
... herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for ...
AP6508 500kHz 21V 3A SYNCHRONOUS DC/DC BUCK CONVERTER Description
... should be less than 200mΩ. Use a larger inductance for improved efficiency under light load conditions. ...
... should be less than 200mΩ. Use a larger inductance for improved efficiency under light load conditions. ...
UNIT 4 BASIC CIRCUIT DESIGN CONCEPTS
... Inverter formed by T1 and T2 is turned on and thus the gate of T3 is pulled down to 0V but T4 is turned on and the output is pulled down ...
... Inverter formed by T1 and T2 is turned on and thus the gate of T3 is pulled down to 0V but T4 is turned on and the output is pulled down ...
AP6503A Description Pin Assignments
... The AP6503A is a 3A current mode control, synchronous buck regulator with built in power MOSFETs. Current mode control assures excellent line and load regulation and a wide loop bandwidth for fast response to load transients. Figure 3 depicts the functional block diagram of AP6503A. The operation of ...
... The AP6503A is a 3A current mode control, synchronous buck regulator with built in power MOSFETs. Current mode control assures excellent line and load regulation and a wide loop bandwidth for fast response to load transients. Figure 3 depicts the functional block diagram of AP6503A. The operation of ...
2016 C.. - CS ManTech
... indicates the presence of a vertical contribution to leakage current across device isolation at high voltage, confirming previous results in literature [11]. A barrier height of 1.5-1.9 eV could be extracted for wafers lots A and B from this linear relationship. However, it is not clear what this ba ...
... indicates the presence of a vertical contribution to leakage current across device isolation at high voltage, confirming previous results in literature [11]. A barrier height of 1.5-1.9 eV could be extracted for wafers lots A and B from this linear relationship. However, it is not clear what this ba ...
Episode 102 - Teaching Advanced Physics
... Electric charge can be picked up and carried by a spoon, just as if it were sugar or milk. Fix a metal spoon to an insulating handle, touch it onto the terminal of a high voltage supply, and carry the spoon across to a charge-measuring instrument, onto which the charge is dumped. Repeat the action: ...
... Electric charge can be picked up and carried by a spoon, just as if it were sugar or milk. Fix a metal spoon to an insulating handle, touch it onto the terminal of a high voltage supply, and carry the spoon across to a charge-measuring instrument, onto which the charge is dumped. Repeat the action: ...
AN-7012 FPF2100/7 Evaluation Board User’s Guide Contents
... This test has been designed to measure the load switch’s response time while the output is loaded by a small resistor, 2.2Ω to GND (moderate short). Figure 7 shows response when the input voltage is connected to 3.3V and a moderate short is applied to the output while the ON pin is triggered HI. Fro ...
... This test has been designed to measure the load switch’s response time while the output is loaded by a small resistor, 2.2Ω to GND (moderate short). Figure 7 shows response when the input voltage is connected to 3.3V and a moderate short is applied to the output while the ON pin is triggered HI. Fro ...
Time-Base Oscillator for RTC ICs
... Load Capacitance For a parallel resonant calibrated crystal, the crystal manufacturer specifies the load capacitance at which the crystal will “parallel” resonate at the nominal frequency. As the graph in Figure 3 displays, increasing the effective load capacitance by hanging additional capacitors o ...
... Load Capacitance For a parallel resonant calibrated crystal, the crystal manufacturer specifies the load capacitance at which the crystal will “parallel” resonate at the nominal frequency. As the graph in Figure 3 displays, increasing the effective load capacitance by hanging additional capacitors o ...
neuromorphic system with novel electronic synapses based
... systems based on principles obtained from biological nervous systems. In a nervous system, nerve cells, also known as neurons, are inter-connected and form neural circuits and networks [2]. The connections between neurons are called synapses, which have different weights and modulate inter-neuron si ...
... systems based on principles obtained from biological nervous systems. In a nervous system, nerve cells, also known as neurons, are inter-connected and form neural circuits and networks [2]. The connections between neurons are called synapses, which have different weights and modulate inter-neuron si ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.