Download TGA4532-SM 数据资料DataSheet下载

Applications
•
•
Point-to-Point Radio
K-band Sat-Com
QFN 4x4 mm 20L
Product Features
•
•
•
•
•
•
•
•
Functional Block Diagram
Frequency Range: 17.7 – 19.7 GHz
Power: 32.5 dBm Psat, 31 dBm P1dB
Gain: 23 dB
TOI: 41 dBm at 20 dBm/tone
NF: 7 dB
Integrated Power Detector
Bias: Vd = 6 V, Idq = 900 mA, Vg = -0.68 V
Typical
Package Dimensions: 4.0 x 4.0 x 0.85 mm
20
18
17
16
1
15
2
14
3
13
4
12
5
11
6
General Description
19
7
8
9
10
Pin Configuration
The TriQuint TGA4532-SM is a K-Band Power
Amplifier. The TGA4532-SM operates from 17.7 - 19.7
GHz and is designed using TriQuint’s power pHEMT
production process.
Pin #
Symbol
1, 3, 4, 5, 6, 10, 11, 13,
14, 20
2
7, 19
8, 18
12
9, 17
15
16
The TGA4532-SM typically provides 32.5 dBm of
saturated output power with small signal gain of 23 dB.
The TGA4532-SM is available in a low-cost, surface
mount 20 lead 4x4 QFN package and is ideally suited for
Point-to-Point Radio.
N/C
RF IN
Vg
GND
RF OUT
Vd
Vdet
Vref
Lead-free and RoHS compliant
V
Evaluation Boards are available upon request.
Ordering Information
Part No.
TGA4532-SM
ECCN
3A001.b.2.c
Description
K-Band Power Amplifier
Standard T/R size = 1000 pieces on a 7” reel.
Preliminary Data Sheet: Rev E
04/27/2012
Disclaimer: Subject to change without notice
www.BDTIC.com/TriQuint/
© 2012 TriQuint Semiconductor, Inc.
`
- 1 of 13 -
Connecting the Digital World to the Global Network®
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Drain Voltage,Vd
Gate Voltage,Vg
Drain to Gate Voltage, Vd – Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, T = 25ºC
Channel Temperature, Tch
Mounting Temperature (30
Seconds)
Storage Temperature
+6.5 V
-4 to 0 V
10 V
1960 mA
-8.2 to 113 mA
12.7 W
26 dBm
200 oC
260 oC
Vd
Idq
Id_drive (Under RF
Drive)
Vg
Min
Typical
Max Units
6
900
V
mA
1200
mA
-0.68
V
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
-40 to 150 oC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Idq = 900 mA, Vg = -0.68 V Typical.
Parameter
Min
Operational Frequency Range
Gain
Input Return Loss
Output Return Loss
Output Power @ Saturation
Output Power @ 1dB Gain Compression
Output TOI
Noise Figure
Gain Temperature Coefficient
Power Temperature Coefficient
17.7
19
10
10
Preliminary Data Sheet: Rev E
04/27/2012
- 2 of 13 -
23
12
15
32.5
31
41
7
-0.023
-0.005
Max
Units
19.7
GHz
dB
dB
dB
dBm
dBm
dBm
dB
dB/°C
dB/°C
Disclaimer: Subject to change without notice
www.BDTIC.com/TriQuint/
© 2012 TriQuint Semiconductor, Inc.
`
29.5
38
Typical
Connecting the Digital World to the Global Network®
Specifications (cont.)
Thermal and Reliability Information
Parameter
Condition
Rating
Thermal Resistance, θJC, measured to back of package
Tbase = 85 °C
Tbase = 85 °C, Vd = 6 V, Idq = 900
mA, Pdiss = 5.4 W
Tbase = 85 °C, Vd = 6 V, Id = 1200
mA, Pout = 32.5 dBm, Pdiss = 5.4 W
θJC = 8.51 °C/W
Tch = 131 °C
Tm = 9.5 E+6 Hours
Tch = 131 °C
Tm = 9.5 E+6 Hours
Channel Temperature (Tch), and Median Lifetime (Tm)
Channel Temperature (Tch), and Median Lifetime (Tm)
Under RF Drive
Median Lifetime (Hours)
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
FET5
1.E+04
25
50
75
100
125
150
175
200
Channel Temperature (°C)
Preliminary Data Sheet: Rev E
04/27/2012
Disclaimer: Subject to change without notice
www.BDTIC.com/TriQuint/
© 2012 TriQuint Semiconductor, Inc.
`
- 3 of 13 -
Connecting the Digital World to the Global Network®
Typical Performance
26
Gain vs. Frequency
IRL, ORL vs Frequency
Vd = 6 V, Idq = 900 mA, Vg = -0.68 V, +25 oC
Vd = 6 V, Idq = 900 mA, Vg = -0.68 V, +25 oC
0
5
Return Loss (dB)
24
23
22
10
15
ORL
20
IRL
25
21
30
14
15
16
17
18
19
20
21
22
14
15
Frequency (GHz)
18
19
20
21
22
Output Power vs. Frequency
Power, Gain, Id vs. Input Power
Vd = 6 V, Idq = 900 mA, Vg = -0.68 V, +25 oC
Vd = 6 V, Idq = 900 mA, Vg = -0.68 V, +25 oC
33
Output Power (dBm)
17
Frequency (GHz)
Output Power (dBm), Gain (dB)
34
16
32
31
Psat
30
P1dB
29
28
27
35
30
1300
25
1100
20
Power
16
17
18
19
20
700
Id
500
-10 -8 -6 -4 -2
21
0
2
4
6
8
10 12
Input Power (dBm)
Frequency (GHz)
OTOI vs. Frequency vs. Pout/ Tone
IM3 vs. Pout/Tone vs. Frequency
Vd = 6 V, Idq = 900 mA, Vg = - 0.68 V, +25 oC
43
900
Gain
15
10
26
1500
@ 18.5 GHz
Id (mA)
Gain (dB)
25
-20
Vd = 6 V, Idq = 900 mA, Vg = -0.68 V, 25 oC
-25
42
41
IM3 (dBc)
OTOI (dBm)
17.5 GHz
-30
19.00 dBm/Tone
40
20.00 dBm/Tone
39
21.00 dBm/Tone
19.5 GHz
-40
-45
38
-50
16
17
18
19
20
21
15 16 17 18 19 20 21 22 23 24 25 26 27
Frequency (GHz)
Preliminary Data Sheet: Rev E
04/27/2012
Pout/Tone (dBm)
- 4 of 13 -
Disclaimer: Subject to change without notice
www.BDTIC.com/TriQuint/
© 2012 TriQuint Semiconductor, Inc.
`
18.5 GHz
-35
Connecting the Digital World to the Global Network®
TGA4532-SM
K-Band Power Amplifier
Typical Performance (cont.)
Gain vs. Frequency vs. Bias
Noise Figure vs. Frequency
Vd = 6 V, Idq = 900 mA, Vg = -0.68 V,+25 oC
7.5
25
Gain (dB)
7.0
NF (dB)
Vd = 5 - 6 V, Idq = 816 - 980 mA, +25 oC
26
6.5
6.0
24
6V, 980mA
6V, 900mA
6V, 816mA
5V, 816mA
23
22
5.5
21
16
17
18
19
Frequency (GHz)
20
21
14
P1dB vs. Frequency vs. Bias
Saturated Power (dBm)
P1dB (dBm)
30
6V, 980mA
6V, 900mA
6V, 816mA
28
22
31
6V, 980mA
6V, 900mA
6V, 816mA
5V, 816mA
30
29
28
27
16
17
18
19
Frequency (GHz)
20
16
21
Vd = 5 - 6 V, Idq = 816 - 980 mA, +25 oC
45
@ 20 dBm/Tone
IM3 (dBc)
43
41
6V, 980mA
39
6V, 900mA
6V, 816mA
37
5V, 816mA
35
16
17
18
19
Frequency (GHz)
Preliminary Data Sheet: Rev E
20
04/27/2012
17
18
19
Frequency (GHz)
20
21
IM3 vs. Pout/Tone vs. Bias
OTOI vs. Frequency vs. Bias
OTOI (dBm)
21
32
5V, 816mA
21
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
Vd = 5 - 6 V, Idq = 816 - 980 mA, @ 18.5 GHz, +25oC
6V, 980mA
6V, 900mA
6V, 816mA
5V, 816mA
14
16
18
20
22
24
26
28
Pout/Tone (dBm)
- 5 of 13 -
Disclaimer: Subject to change without notice
www.BDTIC.com/TriQuint/
© 2012 TriQuint Semiconductor, Inc.
`
17
18
19
20
Frequency (GHz)
Vd = 5 - 6 V, Idq = 816 - 980 mA, +25 oC
33
31
29
16
Saturated Power vs. Frequency vs. Bias
Vd = 5 - 6 V, Idq = 816 - 980 mA, +25 oC
32
15
Connecting the Digital World to the Global Network®
Typical Performance (cont.)
Noise Figure vs. Frequency vs. Bias
Gain vs. Frequency vs. Temperature
Vd = 5 - 6 V, Idq = 816 - 980 mA, +25 oC
7.5
Gain (dB)
NF (dB)
7.0
6.5
6V, 980mA
6V, 900mA
6.0
6V, 816mA
5V, 816mA
5.5
16
17
18
19
Frequency (GHz)
20
Vd = 6 V, Idq = 816 mA, Vg = -0.71 V
28
27
26
25
24
23
22
21
20
19
18
- 40 °C
+25 °C
+85 °C
14
21
P1dB vs. Frequency vs. Temperature
Saturated Power (dBm)
P1dB (dBm)
31
-40 °C
+25 °C
29
+85 °C
28
22
33
32
- 40 °C
31
+25 °C
+85 °C
30
17
18
19
Frequency (GHz)
20
21
16
Vd = 6 V, Idq = 816 mA, Vg = -0.71 V, @ 18.5 GHz
OTOI (dBm)
1
Vdiff -40 °C
0.1
Vdiff +25 °C
Vdiff +85 °C
0.01
0
4
8
12
16
20
24
Output Power (dBm)
Preliminary Data Sheet: Rev E
28
04/27/2012
17
18
19
Frequency (GHz)
20
Vd = 6 V, Idq = 816 mA, Vg = -0.71 V
45
44
43
42
41
40
39
38
37
36
35
@ 20 dBm/Tone
- 40 °C
+25 °C
+85 °C
16
32
17
18
19
20
21
Frequency (GHz)
- 6 of 13 -
Disclaimer: Subject to change without notice
www.BDTIC.com/TriQuint/
© 2012 TriQuint Semiconductor, Inc.
21
OTOI vs. Frequency vs. Temperature
Power Detector vs. Pout vs.Temperature
10
Vdiff (V)
21
29
16
`
17
18
19
20
Frequency (GHz)
Vd = 6 V, Idq = 816 mA, Vg = - 0.71 V
34
32
30
16
Psat vs. Frequency vs. Temperature
Vd = 6 V, Idq = 816 mA, Vg = - 0.71 V
33
15
Connecting the Digital World to the Global Network®
TGA4532-SM
K-Band Power Amplifier
Application Circuit
TGA4532-SM
Vg can be biased from either side (pin 7 or pin 19), and the non-biased side can be left open.
Vd must be biased from both sides (pin 9 and pin 17).
Bias-up Procedure
Bias-down Procedure
Vg set to -1.5 V
Vd set to +6 V
Adjust Vg more positive until quiescent Id is 900 mA.
This will be ~ Vg = -0.68 V typical
Apply RF signal to RF Input
Turn off RF supply
Reduce Vg to -1.5V. Ensure Id ~ 0 mA
Preliminary Data Sheet: Rev E
04/27/2012
Turn Vg to 0 V
- 7 of 13 -
Disclaimer: Subject to change without notice
www.BDTIC.com/TriQuint/
© 2012 TriQuint Semiconductor, Inc.
`
Turn Vd to 0 V
Connecting the Digital World to the Global Network®
Pin Description
TOP VIEW
Pin
1, 3, 4, 5, 6, 10, 11,
13, 14, 20
2
Symbol
Description
N/C
No internal connection; must be grounded on PCB
RF IN
Input, matched to 50 ohms
Gate voltage. Bias network is required; see Application Circuit on page 7 as an
example. Can be biased from either pin.
Internal grounding; can be grounded or left open on PCB
Output, matched to 50 ohms
Drain voltage. Bias network is required; see Application Circuit on page 7 as
an example. Both pins must be biased.
Detector diode output voltage. Varies with RF output power.
Reference diode output voltage.
Backside Paddle. Multiple vias should be employed to minimize inductance
and thermal resistance; see Mounting Configuration on page 11 for suggested
footprint.
7, 19
Vg
8, 18
12
GND
RF OUT
9, 17
Vd
15
16
Vdet
Vref
21
GND
Preliminary Data Sheet: Rev E
04/27/2012
Disclaimer: Subject to change without notice
www.BDTIC.com/TriQuint/
© 2012 TriQuint Semiconductor, Inc.
`
- 8 of 13 -
Connecting the Digital World to the Global Network®
TGA4532-SM
K-Band Power Amplifier
Applications Information
PC Board Layout
Top RF layer is 0.008” thick Rogers RO4003, єr = 3.38. Metal layers are 0.5-oz copper.
Microstrip 50 Ω line detail: width = 0.0175”.
The pad pattern shown has been developed and tested for optimized assembly at TriQuint
Semiconductor. The PCB land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary from company to company, careful
process development is recommended.
For further technical information, refer to the TGA4532-SM Product Information page.
C5
C1
C2
C3
C6
C4
R1
C7
Bill of Material
Ref Des
Value
C1, C2, C3, C4 100 pF
C5, C6, C7
1 uF
R1
15 Ohms
Preliminary Data Sheet: Rev E
Description
Manufacturer
Cap, 0402, 50V, 5%, NPO
Cap, 0603, 50V, 5%, COG
Res, 0402, 1/16W, 5%, SMD
various
various
various
04/27/2012
Disclaimer: Subject to change without notice
www.BDTIC.com/TriQuint/
© 2012 TriQuint Semiconductor, Inc.
`
- 9 of 13 -
Part Number
Connecting the Digital World to the Global Network®
Mechanical Information
Package Information and Dimensions
ll dimensions are in millimeters.
4532
YYWW
XXXX
This package is lead-free/RoHS-compliant. The package base is copper alloy and the plating material on the leads is NiPdAu It
is compatible with both lead-free (maximum 260 °C reflow temperature) and tin-lead (maximum 245 °C reflow temperature)
soldering processes.
The TGA4532-SM will be marked with the “4532” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “XXXX” is an
generated number.
Preliminary Data Sheet: Rev E
04/27/2012
Disclaimer: Subject to change without notice
www.BDTIC.com/TriQuint/
© 2012 TriQuint Semiconductor, Inc.
`
- 10 of 13 -
Connecting the Digital World to the Global Network®
Mechanical Information (cont.)
Mounting Configuration
All dimensions are in millimeters (inches).
Notes:
1. A heatsink underneath the area of the PCB for the mounted device
is recommended for proper thermal operation.
2. Ground / thermal vias are critical for the proper performance of
this device. Vias have a final plated thru diameter of 0.254 mm
(0.010”).
0.440
(0.017")
0.880
(0.034")
0.254
(0.010")
0.508
(0.020")
Tape and Reel Information
Tape and reel specifications for this part are also available on the TriQuint website in the “Application Notes” section.
Standard T/R size = 1000 pieces on a 7 x 0.5” reel.
CARRIER AND COVER TAPE DIMENSIONS
Part
Feature
Cavity
Length
Width
Depth
Pitch
Cavity to Perforation
Length Direction
Cavity to Perforation
Width Direction
Width
Width
Distance Between Centerline
Cover Tape
Carrier Tape
Preliminary Data Sheet: Rev E
04/27/2012
Size (in)
Size (mm)
A0
B0
K0
P1
0.171
0.171
0.043
0.315
4.35
4.35
1.1
8.0
P2
0.079
2.0
F
0.217
5.5
C
W
0.374
0.472
9.5
12.0
Disclaimer: Subject to change without notice
www.BDTIC.com/TriQuint/
© 2012 TriQuint Semiconductor, Inc.
`
- 11 of 13 -
Symbol
Connecting the Digital World to the Global Network®
Product Compliance Information
Solderability
ESD Information
Compatible with the latest version of J-STD-020, Lead
free solder, 260°
ESD Rating:
Value:
Test:
Standard:
Class 1A
≥ 250V and ≤ 500V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating
Level 1 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 1 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
ECCN
US Department of Commerce 3A001.b.2.c
Recommended Soldering Temperature Profile
Preliminary Data Sheet: Rev E
04/27/2012
Disclaimer: Subject to change without notice
www.BDTIC.com/TriQuint/
© 2012 TriQuint Semiconductor, Inc.
`
- 12 of 13 -
Connecting the Digital World to the Global Network®
TGA4532-SM
K-Band Power Amplifier
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com
Email: [email protected]
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: [email protected]
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Copyright © 2012 TriQuint Semiconductor, Inc. All rights reserved.
Preliminary Data Sheet: Rev E
04/27/2012
Disclaimer: Subject to change without notice
www.BDTIC.com/TriQuint/
© 2012 TriQuint Semiconductor, Inc.
`
- 13 of 13 -
Connecting the Digital World to the Global Network®