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Applications • • Point-to-Point Radio K-band Sat-Com QFN 4x4 mm 20L Product Features • • • • • • • • Functional Block Diagram Frequency Range: 17.7 – 19.7 GHz Power: 32.5 dBm Psat, 31 dBm P1dB Gain: 23 dB TOI: 41 dBm at 20 dBm/tone NF: 7 dB Integrated Power Detector Bias: Vd = 6 V, Idq = 900 mA, Vg = -0.68 V Typical Package Dimensions: 4.0 x 4.0 x 0.85 mm 20 18 17 16 1 15 2 14 3 13 4 12 5 11 6 General Description 19 7 8 9 10 Pin Configuration The TriQuint TGA4532-SM is a K-Band Power Amplifier. The TGA4532-SM operates from 17.7 - 19.7 GHz and is designed using TriQuint’s power pHEMT production process. Pin # Symbol 1, 3, 4, 5, 6, 10, 11, 13, 14, 20 2 7, 19 8, 18 12 9, 17 15 16 The TGA4532-SM typically provides 32.5 dBm of saturated output power with small signal gain of 23 dB. The TGA4532-SM is available in a low-cost, surface mount 20 lead 4x4 QFN package and is ideally suited for Point-to-Point Radio. N/C RF IN Vg GND RF OUT Vd Vdet Vref Lead-free and RoHS compliant V Evaluation Boards are available upon request. Ordering Information Part No. TGA4532-SM ECCN 3A001.b.2.c Description K-Band Power Amplifier Standard T/R size = 1000 pieces on a 7” reel. Preliminary Data Sheet: Rev E 04/27/2012 Disclaimer: Subject to change without notice www.BDTIC.com/TriQuint/ © 2012 TriQuint Semiconductor, Inc. ` - 1 of 13 - Connecting the Digital World to the Global Network® Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Drain Voltage,Vd Gate Voltage,Vg Drain to Gate Voltage, Vd – Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW, T = 25ºC Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature +6.5 V -4 to 0 V 10 V 1960 mA -8.2 to 113 mA 12.7 W 26 dBm 200 oC 260 oC Vd Idq Id_drive (Under RF Drive) Vg Min Typical Max Units 6 900 V mA 1200 mA -0.68 V Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. -40 to 150 oC Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Idq = 900 mA, Vg = -0.68 V Typical. Parameter Min Operational Frequency Range Gain Input Return Loss Output Return Loss Output Power @ Saturation Output Power @ 1dB Gain Compression Output TOI Noise Figure Gain Temperature Coefficient Power Temperature Coefficient 17.7 19 10 10 Preliminary Data Sheet: Rev E 04/27/2012 - 2 of 13 - 23 12 15 32.5 31 41 7 -0.023 -0.005 Max Units 19.7 GHz dB dB dB dBm dBm dBm dB dB/°C dB/°C Disclaimer: Subject to change without notice www.BDTIC.com/TriQuint/ © 2012 TriQuint Semiconductor, Inc. ` 29.5 38 Typical Connecting the Digital World to the Global Network® Specifications (cont.) Thermal and Reliability Information Parameter Condition Rating Thermal Resistance, θJC, measured to back of package Tbase = 85 °C Tbase = 85 °C, Vd = 6 V, Idq = 900 mA, Pdiss = 5.4 W Tbase = 85 °C, Vd = 6 V, Id = 1200 mA, Pout = 32.5 dBm, Pdiss = 5.4 W θJC = 8.51 °C/W Tch = 131 °C Tm = 9.5 E+6 Hours Tch = 131 °C Tm = 9.5 E+6 Hours Channel Temperature (Tch), and Median Lifetime (Tm) Channel Temperature (Tch), and Median Lifetime (Tm) Under RF Drive Median Lifetime (Hours) 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 FET5 1.E+04 25 50 75 100 125 150 175 200 Channel Temperature (°C) Preliminary Data Sheet: Rev E 04/27/2012 Disclaimer: Subject to change without notice www.BDTIC.com/TriQuint/ © 2012 TriQuint Semiconductor, Inc. ` - 3 of 13 - Connecting the Digital World to the Global Network® Typical Performance 26 Gain vs. Frequency IRL, ORL vs Frequency Vd = 6 V, Idq = 900 mA, Vg = -0.68 V, +25 oC Vd = 6 V, Idq = 900 mA, Vg = -0.68 V, +25 oC 0 5 Return Loss (dB) 24 23 22 10 15 ORL 20 IRL 25 21 30 14 15 16 17 18 19 20 21 22 14 15 Frequency (GHz) 18 19 20 21 22 Output Power vs. Frequency Power, Gain, Id vs. Input Power Vd = 6 V, Idq = 900 mA, Vg = -0.68 V, +25 oC Vd = 6 V, Idq = 900 mA, Vg = -0.68 V, +25 oC 33 Output Power (dBm) 17 Frequency (GHz) Output Power (dBm), Gain (dB) 34 16 32 31 Psat 30 P1dB 29 28 27 35 30 1300 25 1100 20 Power 16 17 18 19 20 700 Id 500 -10 -8 -6 -4 -2 21 0 2 4 6 8 10 12 Input Power (dBm) Frequency (GHz) OTOI vs. Frequency vs. Pout/ Tone IM3 vs. Pout/Tone vs. Frequency Vd = 6 V, Idq = 900 mA, Vg = - 0.68 V, +25 oC 43 900 Gain 15 10 26 1500 @ 18.5 GHz Id (mA) Gain (dB) 25 -20 Vd = 6 V, Idq = 900 mA, Vg = -0.68 V, 25 oC -25 42 41 IM3 (dBc) OTOI (dBm) 17.5 GHz -30 19.00 dBm/Tone 40 20.00 dBm/Tone 39 21.00 dBm/Tone 19.5 GHz -40 -45 38 -50 16 17 18 19 20 21 15 16 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) Preliminary Data Sheet: Rev E 04/27/2012 Pout/Tone (dBm) - 4 of 13 - Disclaimer: Subject to change without notice www.BDTIC.com/TriQuint/ © 2012 TriQuint Semiconductor, Inc. ` 18.5 GHz -35 Connecting the Digital World to the Global Network® TGA4532-SM K-Band Power Amplifier Typical Performance (cont.) Gain vs. Frequency vs. Bias Noise Figure vs. Frequency Vd = 6 V, Idq = 900 mA, Vg = -0.68 V,+25 oC 7.5 25 Gain (dB) 7.0 NF (dB) Vd = 5 - 6 V, Idq = 816 - 980 mA, +25 oC 26 6.5 6.0 24 6V, 980mA 6V, 900mA 6V, 816mA 5V, 816mA 23 22 5.5 21 16 17 18 19 Frequency (GHz) 20 21 14 P1dB vs. Frequency vs. Bias Saturated Power (dBm) P1dB (dBm) 30 6V, 980mA 6V, 900mA 6V, 816mA 28 22 31 6V, 980mA 6V, 900mA 6V, 816mA 5V, 816mA 30 29 28 27 16 17 18 19 Frequency (GHz) 20 16 21 Vd = 5 - 6 V, Idq = 816 - 980 mA, +25 oC 45 @ 20 dBm/Tone IM3 (dBc) 43 41 6V, 980mA 39 6V, 900mA 6V, 816mA 37 5V, 816mA 35 16 17 18 19 Frequency (GHz) Preliminary Data Sheet: Rev E 20 04/27/2012 17 18 19 Frequency (GHz) 20 21 IM3 vs. Pout/Tone vs. Bias OTOI vs. Frequency vs. Bias OTOI (dBm) 21 32 5V, 816mA 21 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 Vd = 5 - 6 V, Idq = 816 - 980 mA, @ 18.5 GHz, +25oC 6V, 980mA 6V, 900mA 6V, 816mA 5V, 816mA 14 16 18 20 22 24 26 28 Pout/Tone (dBm) - 5 of 13 - Disclaimer: Subject to change without notice www.BDTIC.com/TriQuint/ © 2012 TriQuint Semiconductor, Inc. ` 17 18 19 20 Frequency (GHz) Vd = 5 - 6 V, Idq = 816 - 980 mA, +25 oC 33 31 29 16 Saturated Power vs. Frequency vs. Bias Vd = 5 - 6 V, Idq = 816 - 980 mA, +25 oC 32 15 Connecting the Digital World to the Global Network® Typical Performance (cont.) Noise Figure vs. Frequency vs. Bias Gain vs. Frequency vs. Temperature Vd = 5 - 6 V, Idq = 816 - 980 mA, +25 oC 7.5 Gain (dB) NF (dB) 7.0 6.5 6V, 980mA 6V, 900mA 6.0 6V, 816mA 5V, 816mA 5.5 16 17 18 19 Frequency (GHz) 20 Vd = 6 V, Idq = 816 mA, Vg = -0.71 V 28 27 26 25 24 23 22 21 20 19 18 - 40 °C +25 °C +85 °C 14 21 P1dB vs. Frequency vs. Temperature Saturated Power (dBm) P1dB (dBm) 31 -40 °C +25 °C 29 +85 °C 28 22 33 32 - 40 °C 31 +25 °C +85 °C 30 17 18 19 Frequency (GHz) 20 21 16 Vd = 6 V, Idq = 816 mA, Vg = -0.71 V, @ 18.5 GHz OTOI (dBm) 1 Vdiff -40 °C 0.1 Vdiff +25 °C Vdiff +85 °C 0.01 0 4 8 12 16 20 24 Output Power (dBm) Preliminary Data Sheet: Rev E 28 04/27/2012 17 18 19 Frequency (GHz) 20 Vd = 6 V, Idq = 816 mA, Vg = -0.71 V 45 44 43 42 41 40 39 38 37 36 35 @ 20 dBm/Tone - 40 °C +25 °C +85 °C 16 32 17 18 19 20 21 Frequency (GHz) - 6 of 13 - Disclaimer: Subject to change without notice www.BDTIC.com/TriQuint/ © 2012 TriQuint Semiconductor, Inc. 21 OTOI vs. Frequency vs. Temperature Power Detector vs. Pout vs.Temperature 10 Vdiff (V) 21 29 16 ` 17 18 19 20 Frequency (GHz) Vd = 6 V, Idq = 816 mA, Vg = - 0.71 V 34 32 30 16 Psat vs. Frequency vs. Temperature Vd = 6 V, Idq = 816 mA, Vg = - 0.71 V 33 15 Connecting the Digital World to the Global Network® TGA4532-SM K-Band Power Amplifier Application Circuit TGA4532-SM Vg can be biased from either side (pin 7 or pin 19), and the non-biased side can be left open. Vd must be biased from both sides (pin 9 and pin 17). Bias-up Procedure Bias-down Procedure Vg set to -1.5 V Vd set to +6 V Adjust Vg more positive until quiescent Id is 900 mA. This will be ~ Vg = -0.68 V typical Apply RF signal to RF Input Turn off RF supply Reduce Vg to -1.5V. Ensure Id ~ 0 mA Preliminary Data Sheet: Rev E 04/27/2012 Turn Vg to 0 V - 7 of 13 - Disclaimer: Subject to change without notice www.BDTIC.com/TriQuint/ © 2012 TriQuint Semiconductor, Inc. ` Turn Vd to 0 V Connecting the Digital World to the Global Network® Pin Description TOP VIEW Pin 1, 3, 4, 5, 6, 10, 11, 13, 14, 20 2 Symbol Description N/C No internal connection; must be grounded on PCB RF IN Input, matched to 50 ohms Gate voltage. Bias network is required; see Application Circuit on page 7 as an example. Can be biased from either pin. Internal grounding; can be grounded or left open on PCB Output, matched to 50 ohms Drain voltage. Bias network is required; see Application Circuit on page 7 as an example. Both pins must be biased. Detector diode output voltage. Varies with RF output power. Reference diode output voltage. Backside Paddle. Multiple vias should be employed to minimize inductance and thermal resistance; see Mounting Configuration on page 11 for suggested footprint. 7, 19 Vg 8, 18 12 GND RF OUT 9, 17 Vd 15 16 Vdet Vref 21 GND Preliminary Data Sheet: Rev E 04/27/2012 Disclaimer: Subject to change without notice www.BDTIC.com/TriQuint/ © 2012 TriQuint Semiconductor, Inc. ` - 8 of 13 - Connecting the Digital World to the Global Network® TGA4532-SM K-Band Power Amplifier Applications Information PC Board Layout Top RF layer is 0.008” thick Rogers RO4003, єr = 3.38. Metal layers are 0.5-oz copper. Microstrip 50 Ω line detail: width = 0.0175”. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, refer to the TGA4532-SM Product Information page. C5 C1 C2 C3 C6 C4 R1 C7 Bill of Material Ref Des Value C1, C2, C3, C4 100 pF C5, C6, C7 1 uF R1 15 Ohms Preliminary Data Sheet: Rev E Description Manufacturer Cap, 0402, 50V, 5%, NPO Cap, 0603, 50V, 5%, COG Res, 0402, 1/16W, 5%, SMD various various various 04/27/2012 Disclaimer: Subject to change without notice www.BDTIC.com/TriQuint/ © 2012 TriQuint Semiconductor, Inc. ` - 9 of 13 - Part Number Connecting the Digital World to the Global Network® Mechanical Information Package Information and Dimensions ll dimensions are in millimeters. 4532 YYWW XXXX This package is lead-free/RoHS-compliant. The package base is copper alloy and the plating material on the leads is NiPdAu It is compatible with both lead-free (maximum 260 °C reflow temperature) and tin-lead (maximum 245 °C reflow temperature) soldering processes. The TGA4532-SM will be marked with the “4532” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “XXXX” is an generated number. Preliminary Data Sheet: Rev E 04/27/2012 Disclaimer: Subject to change without notice www.BDTIC.com/TriQuint/ © 2012 TriQuint Semiconductor, Inc. ` - 10 of 13 - Connecting the Digital World to the Global Network® Mechanical Information (cont.) Mounting Configuration All dimensions are in millimeters (inches). Notes: 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. 2. Ground / thermal vias are critical for the proper performance of this device. Vias have a final plated thru diameter of 0.254 mm (0.010”). 0.440 (0.017") 0.880 (0.034") 0.254 (0.010") 0.508 (0.020") Tape and Reel Information Tape and reel specifications for this part are also available on the TriQuint website in the “Application Notes” section. Standard T/R size = 1000 pieces on a 7 x 0.5” reel. CARRIER AND COVER TAPE DIMENSIONS Part Feature Cavity Length Width Depth Pitch Cavity to Perforation Length Direction Cavity to Perforation Width Direction Width Width Distance Between Centerline Cover Tape Carrier Tape Preliminary Data Sheet: Rev E 04/27/2012 Size (in) Size (mm) A0 B0 K0 P1 0.171 0.171 0.043 0.315 4.35 4.35 1.1 8.0 P2 0.079 2.0 F 0.217 5.5 C W 0.374 0.472 9.5 12.0 Disclaimer: Subject to change without notice www.BDTIC.com/TriQuint/ © 2012 TriQuint Semiconductor, Inc. ` - 11 of 13 - Symbol Connecting the Digital World to the Global Network® Product Compliance Information Solderability ESD Information Compatible with the latest version of J-STD-020, Lead free solder, 260° ESD Rating: Value: Test: Standard: Class 1A ≥ 250V and ≤ 500V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating Level 1 at +260 °C convection reflow The part is rated Moisture Sensitivity Level 1 at 260°C per JEDEC standard IPC/JEDEC J-STD-020. This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • Antimony Free • TBBP-A (C15H12Br402) Free • PFOS Free • SVHC Free ECCN US Department of Commerce 3A001.b.2.c Recommended Soldering Temperature Profile Preliminary Data Sheet: Rev E 04/27/2012 Disclaimer: Subject to change without notice www.BDTIC.com/TriQuint/ © 2012 TriQuint Semiconductor, Inc. ` - 12 of 13 - Connecting the Digital World to the Global Network® TGA4532-SM K-Band Power Amplifier Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.972.994.8465 +1.972.994.8504 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright © 2012 TriQuint Semiconductor, Inc. All rights reserved. Preliminary Data Sheet: Rev E 04/27/2012 Disclaimer: Subject to change without notice www.BDTIC.com/TriQuint/ © 2012 TriQuint Semiconductor, Inc. ` - 13 of 13 - Connecting the Digital World to the Global Network®