Download NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor August 1996

August 1996
NDT014L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology.This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes.Thesedevices are particularly suited for low voltage
applications such as DC motor control and DC/DC
conversion where fast switching, low in-line power loss, and
resistance to transients are needed.
2.8 A, 60 V. RDS(ON) = 0.2 Ω @ VGS = 4.5 V
RDS(ON) = 0.16 Ω @ VGS = 10 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
_________________________________________________________________________________
D
D
G
Absolute Maximum Ratings
D
G
S
S
T A = 25°C unless otherwise noted
Symbol
Parameter
NDT014L
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
± 2.8
A
- Continuous
(Note 1a)
- Pulsed
PD
TJ,TSTG
Maximum Power Dissipation
± 10
(Note 1a)
3
(Note 1b)
1.3
(Note 1c)
1.1
Operating and Storage Temperature Range
W
-65 to 150
°C
(Note 1a)
42
°C/W
(Note 1)
12
°C/W
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
© 1997 Fairchild Semiconductor Corporation
NDT014L Rev.D
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
60
V
TJ = 55°C
25
µA
250
µA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
-100
nA
3
V
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS= 4.5 V, ID = 2.8 A
1
TJ = 125°C
0.8
TJ = 125°C
VGS = 10 V, ID = 3.4 A
ID(on)
GFS
On-State Drain Current
Forward Transconductance
VGS = 4.5 V , VDS = 5 V
5
VGS = 10 V, VDS = 5 V
10
1.5
1.1
2
0.17
0.2
0.22
0.36
0.12
0.16
Ω
A
VGS = 5 V, ID = 2.8 A
4.2
S
VDS = 30 V, VGS = 0 V,
f = 1.0 MHz
214
pF
70
pF
27
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 3 A,
VGEN = 10 V, RGEN = 12 Ω
VDS = 10 V,
ID = 2.8 A, VGS = 4.5 V
6
12
ns
14
25
ns
15
28
ns
10
18
ns
3.6
5
nC
0.8
nC
1.4
nC
NDT014L Rev.D
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
2.3
A
1.3
V
140
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.3 A (Note 2)
trr
Reverse Recovery Time
VGS = 0 V, IF = 2.3 A dIF/dt = 100 A/µs
0.85
Notes:
1.
T J −T A
T J −T A
= R θJC+R
= I 2D(t) × R DS(ON)@T J RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the
R θJA(t)
θCA (t)
solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment, typical
RθJA is found to be:
a. 42oC/W with 1 in2 of 2 oz copper mounting pad.
b. 95oC/W with 0.066 in2 of 2 oz copper mounting pad.
c. 110oC/W with 0.0123 in2 of 2 oz copper mounting pad.
PD (t) =
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT014L Rev.D
Typical Electrical Characteristics
2
10
5.0
4.5
6.0
6
R DS(on) , NORMALIZED
4.0
8
3.5
4
D
DRAIN-SOURCE ON-RESISTANCE
, DRAIN-SOURCE CURRENT (A)
VGS = 10V
3.0
2
I
2.5
0
0
1
2
3
VDS, DRAIN-SOURCE VOLTAGE (V)
4
4.5
5.0
6.0
10
0.75
0
2
4
6
I , DRAIN CURRENT (A)
D
= 2.8A
R DS(on) , NORMALIZED
V GS = 4.5V
1.25
1
0.75
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
125
V
GS
TJ = 125°C
1.5
1.25
25°C
1
-55°C
0.75
0.5
150
0
2
4
6
I , DRAIN CURRENT (A)
25°C
VGS(th) , NORMALIZED
I D , DRAIN CURRENT (A)
8
125°C
6
4
2
2
V
GS
3
4
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
6
GATE-SOURCE THRESHOLD VOLTAGE
T = -55°C
J
1
10
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
10
VDS = 5V
8
D
Figure 3. On-Resistance Variation with
Temperature.
0
10
= 4.5V
1.75
J
0
8
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
4.0
1
2
I
DRAIN-SOURCE ON-RESISTANCE
3.5
1.25
D
1.75
0.5
-50
VGS =3.0V
1.5
0.5
5
Figure 1. On-Region Characteristics.
1.5
1.75
1.2
VDS = VGS
I D = 250µA
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
125
150
J
Figure 6. Gate Threshold Variation with
Temperature.
NDT014L Rev.D
Typical Electrical Characteristics
10
V GS = 0V
I D = 250µA
I , REVERSE DRAIN CURRENT (A)
1.08
1.04
1
0.96
1
T J = 125°C
0.1
25°C
0.01
-55°C
0.001
S
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.12
0.92
-50
-25
0
25
50
75
100
T J , JUNCTION TEMPERATURE (°C)
125
0.0001
0.2
150
700
10
, GATE-SOURCE VOLTAGE (V)
Ciss
200
Coss
100
50
Crss
0.2
GS
f = 1 MHz
V GS = 0V
6
4
2
0.5
V
1
2
5
10
, DRAIN TO SOURCE VOLTAGE (V)
20
40
60
0
0
2
Q
DS
g
Figure 9. Capacitance Characteristics.
t d(on)
t off
tr
t d(off)
tf
90%
90%
VOUT
10%
DUT
G
10
V OUT
D
R GEN
8
t on
RL
V IN
4
6
, GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
V DD
VGS
10V
20V
8
V
CAPACITANCE (pF)
V DS = 5V
I D = 2.8A
500
10
0.1
1.2
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
Figure 7. Breakdown Voltage Variation with
Temperature.
20
0.4
0.6
0.8
1
V SD , BODY DIODE FORWARD VOLTAGE (V)
10%
INVERTED
90%
S
V IN
50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDT014L Rev.D
Typical Thermal Characteristics
3.5
gFS, TRANSCONDUCTANCE (SIEMENS)
8
STEADY-STATE POWER DISSIPATION (W)
VDS = 5V
T = -55°C
J
6
25°C
4
125°C
2
0
0
2
4
6
I , DRAIN CURRENT (A)
8
1a
3
2.5
2
1.5
1b
1c
1
4.5"x5" FR-4 Board
o
TA = 2 5 C
Still Air
0.5
0
10
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in 2 )
1
D
Figure 14. SOT-223 Maximum Steady- State
Power Dissipation versus Copper
Mounting Pad Area.
Figure 13. Transconductance Variation with Drain
Current and Temperature.
20
10
5
3
1a
I D , DRAIN CURRENT (A)
ID , STEADY-STATE DRAIN CURRENT (A)
4
1b
2
1c
4 .5"x5" FR-4 Board
1
T
A
GS
0.1
1s
10s
VGS = 4.5V
0.1
SINGLE PULSE
R θJA =See Note1c
T A = 25°C
s
us
ms
0m
s
DC
= 4.5V
0
0
10
10
0.5
Still Air
V
100
1
0.05
= 25 o C
10u
IT
IM
)L
ON
S(
RD
0.2
0.3
0.4
2
2oz COPPER MOUNTING PAD AREA (in )
0.01
0.1
0.5
Figure 15. Maximum Steady- State Drain
Current versus Copper Mounting Pad
Area.
0.5
1
2
5
10
VDS , DRAIN-SOURCE VOLTAGE (V)
30
50
80
Figure 16. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.01
R JA (t) = r(t) * R JA
θ
θ
R JA = See Note 1 c
θ
P(pk)
0.01
t1
0.005
Single Pulse
0.002
0.001
0.0001
t2
TJ - TA = P * R
(t)
θJA
Duty Cycle, D = t 1 / t 2
0.001
0.01
0.1
1
10
100
300
t 1 , TIME (sec)
Figure 17. Typical Transient Thermal Impedance Curve.
Remark: Thermal characterization performed under the conditions of Note 1c. Should better thermal design employs, RθJA will be
lower and reach thermal equivalent sooner.
NDT014L Rev.D
SOT-223 Tape and Reel Data and Package Dimensions
SOT-223 Packaging
Configuration: Figure 1.0
Customized Label
Packaging Description:
F63TNR Label
Antistatic Cover Tape
SOT-223 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F852
014
F852
014
F852
014
F852
014
SOT-223 Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Standard
(no flow code)
TNR
2,500
D84Z
SOT-223 Unit Orientation
TNR
500
13" Dia
7" Dia
343x64x343
184x187x47
Max qty per Box
5,000
1,000
Weight per unit (gm)
0.1246
0.1246
Weight per Reel (kg)
0.7250
0.1532
343mm x 342mm x 64mm
Intermediate box for Standard
F63TNR Label
Note/Comments
F63TNR Label
F63TNR Label sample
184mm x 184mm x 47mm
Pizza Box for D84Z Option
SOT-223 Tape Leader and Trailer
Configuration: Figure 2.0
LOT: CBVK741B019
QTY: 3000
FSID: PN2222A
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Carrier Tape
Cover Tape
Components
Trailer Tape
300mm minimum or
38 empty pockets
Leader Tape
500mm minimum or
62 empty pockets
September 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
SOT-223
(12mm)
A0
6.83
+/-0.10
B0
7.42
+/-0.10
W
12.0
+/-0.3
D0
D1
1.55
+/-0.05
1.50
+/-0.10
E1
E2
1.75
+/-0.10
F
10.25
min
P1
5.50
+/-0.05
P0
8.0
+/-0.1
4.0
+/-0.1
K0
1.88
+/-0.10
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
T
Wc
0.292
+/0.0130
9.5
+/-0.025
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SOT-223 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
W3
13" Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
5.906
150
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
7" Dia
7.00
177.8
12mm
13" Dia
13.00
330
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
July 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 (FS PKG Code 47)
1:1
Scale 1:1 on letter size paper
Part Weight per unit (gram): 0.1246
September 1999, Rev. C
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.