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Specification Status: Released  PolyZen GENERAL DESCRIPTION
Specification Status: Released PolyZen GENERAL DESCRIPTION

... was selected due to its relatively flat voltage vs current response. This helps improve output voltage clamping, even when input voltage is high and diode currents are large. An advanced feature of the PolyZen micro-assembly is that the Zener diode is thermally coupled to a resistively nonlinear, po ...
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ECE3030 Physical Foundations of Computer Engineering, Fall 2015
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... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure
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... At present there is considerable interest in high power microwave devices based on GaN–AlGaN heterojunctions. Impressive powers in the range of 5–10 W/mm have already been demonstrated at operation frequencies ranging from 2 to 10 GHz.1 However, two key problems still remain. First, the gate leakage ...
AP8803 Description Pin Assignments
AP8803 Description Pin Assignments

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... rather than a 2D-electron gas (2DEG) [3], [4]. This electronic fluid is described by the same equations as water in a shallow channel. Wave propagation in the electronic fluid can be used as the basis for a new generation of millimeter and submillimeter-wave devices—a FET emitting far infrared radia ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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