Specification Status: Released PolyZen GENERAL DESCRIPTION
... was selected due to its relatively flat voltage vs current response. This helps improve output voltage clamping, even when input voltage is high and diode currents are large. An advanced feature of the PolyZen micro-assembly is that the Zener diode is thermally coupled to a resistively nonlinear, po ...
... was selected due to its relatively flat voltage vs current response. This helps improve output voltage clamping, even when input voltage is high and diode currents are large. An advanced feature of the PolyZen micro-assembly is that the Zener diode is thermally coupled to a resistively nonlinear, po ...
ECE3030 Physical Foundations of Computer Engineering, Fall 2015
... Please note that, for example, < is different than ≤; e.g., if x ≤ 5 and y ≥ 5, then it is possible that x = 5 = y. On the other hand, if x < 5 and y > 5, then x and y never have the same value. You must use proper versions of <, ≤, ≥ or > in your answer to receive full credit for this problem. 4) ( ...
... Please note that, for example, < is different than ≤; e.g., if x ≤ 5 and y ≥ 5, then it is possible that x = 5 = y. On the other hand, if x < 5 and y > 5, then x and y never have the same value. You must use proper versions of <, ≤, ≥ or > in your answer to receive full credit for this problem. 4) ( ...
DT1240-04LP Features & Applications Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure
... At present there is considerable interest in high power microwave devices based on GaN–AlGaN heterojunctions. Impressive powers in the range of 5–10 W/mm have already been demonstrated at operation frequencies ranging from 2 to 10 GHz.1 However, two key problems still remain. First, the gate leakage ...
... At present there is considerable interest in high power microwave devices based on GaN–AlGaN heterojunctions. Impressive powers in the range of 5–10 W/mm have already been demonstrated at operation frequencies ranging from 2 to 10 GHz.1 However, two key problems still remain. First, the gate leakage ...
AP8803 Description Pin Assignments
... RSET, L1, the LEDs and the schottky diode D1, and back to the supply rail, but it decays, with the rate of decay determined by the forward voltage drop of the LEDs and the schottky diode. This decaying current produces a falling voltage at RSET, which is sensed by the AP8803. A voltage proportional ...
... RSET, L1, the LEDs and the schottky diode D1, and back to the supply rail, but it decays, with the rate of decay determined by the forward voltage drop of the LEDs and the schottky diode. This decaying current produces a falling voltage at RSET, which is sensed by the AP8803. A voltage proportional ...
A 1-V CMOS Current Reference With Temperature and Process
... , is calculated in order to obthe proper resistor ratio, and ...
... , is calculated in order to obthe proper resistor ratio, and ...
NCV7680-NCV3136EVB NCV7680-NCV3163 Evaluation Board User's Manual
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/ ...
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/ ...
Sommar Lighting
... You are asked to design and develop either a freestanding lamp, a wall lamp or a hanging lamp suitable for either indoor or outdoor (patio/garden) use. The lamp should utilise LEDs and a USB or solar cell power source. We are particularly keen to see ideas which explore different ways of controlling ...
... You are asked to design and develop either a freestanding lamp, a wall lamp or a hanging lamp suitable for either indoor or outdoor (patio/garden) use. The lamp should utilise LEDs and a USB or solar cell power source. We are particularly keen to see ideas which explore different ways of controlling ...
Description PIN CONNECTIONS Features TYPICAL OPERATING
... Supply Input. Connect a 0.1μF ceramic capacitor close to the device from IN to GND. Feedback Input. Regulates to 600mV nominal. Output. Connect a capacitor close to device between OUT and GND. See the Applications Information section. ...
... Supply Input. Connect a 0.1μF ceramic capacitor close to the device from IN to GND. Feedback Input. Regulates to 600mV nominal. Output. Connect a capacitor close to device between OUT and GND. See the Applications Information section. ...
Special OFFERS | Cialis Prices Mexico
... these devices could play an important role in future electronic systems.1-4 Previous theoretical studies of nanotube devices have mostly focused on two terminal devices, such as PN junctions and Schottky diodes,5-7 but from an application point of view, the transistor is the most interesting. To dat ...
... these devices could play an important role in future electronic systems.1-4 Previous theoretical studies of nanotube devices have mostly focused on two terminal devices, such as PN junctions and Schottky diodes,5-7 but from an application point of view, the transistor is the most interesting. To dat ...
BFP405F
... the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ...
... the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ...
Class 6
... The piezoelectric effect is described in terms of piezoelectric charge coefficients, dij, which relate the static voltage, electric field, or surface charge in the i direction to displacement, applied force, or stress in the j direction. The convention for describing piezoelectrics is that the direc ...
... The piezoelectric effect is described in terms of piezoelectric charge coefficients, dij, which relate the static voltage, electric field, or surface charge in the i direction to displacement, applied force, or stress in the j direction. The convention for describing piezoelectrics is that the direc ...
NCN5150NGEVB NCN5150 Evaluation Board User's Manual
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/ ...
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/ ...
1 - Electrical and Computer Engineering
... Light emitting diodes (LED) are used extensively in displays, remote controls and sensor systems (intruder alarms, etc. ...). You may be surprised to know that any pn diode emits light when biased, but only the LEDs are optimized to generate a lot of light and to allow this light to escape from the ...
... Light emitting diodes (LED) are used extensively in displays, remote controls and sensor systems (intruder alarms, etc. ...). You may be surprised to know that any pn diode emits light when biased, but only the LEDs are optimized to generate a lot of light and to allow this light to escape from the ...
AL8812 Description Pin Assignments
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
Polymer Dispersed Liquid Crystal
... light at high intensity directly back to the source of the light. FRC robots use cameras surrounded by high intensity LEDs to detect the apparently very bright retroreflective tape and turn towards it. Techniques used for locating retroreflective tape are very similar to those used in detecting glar ...
... light at high intensity directly back to the source of the light. FRC robots use cameras surrounded by high intensity LEDs to detect the apparently very bright retroreflective tape and turn towards it. Techniques used for locating retroreflective tape are very similar to those used in detecting glar ...
Terahertz Detector Utilizing Two-dimensional Electronic Fluid
... rather than a 2D-electron gas (2DEG) [3], [4]. This electronic fluid is described by the same equations as water in a shallow channel. Wave propagation in the electronic fluid can be used as the basis for a new generation of millimeter and submillimeter-wave devices—a FET emitting far infrared radia ...
... rather than a 2D-electron gas (2DEG) [3], [4]. This electronic fluid is described by the same equations as water in a shallow channel. Wave propagation in the electronic fluid can be used as the basis for a new generation of millimeter and submillimeter-wave devices—a FET emitting far infrared radia ...
RADMON-Concept-V1.1
... The measurement technique exploits the change of the threshold voltage (voltage needed at the gate of the transistor to achieve conduction) due to irradiation in p-MOS transitors. The radiation induced electrons and holes have different mobilities in the oxide and while electrons are collected by th ...
... The measurement technique exploits the change of the threshold voltage (voltage needed at the gate of the transistor to achieve conduction) due to irradiation in p-MOS transitors. The radiation induced electrons and holes have different mobilities in the oxide and while electrons are collected by th ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.