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DATA  SHEET PMBTA13; PMBTA14 NPN Darlington transistors
DATA SHEET PMBTA13; PMBTA14 NPN Darlington transistors

... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
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... GaAs is a direct band gap semiconductor, which means that the minimum of theConduction band is directly over the maximum of the valance band (For undoped GaAs, the energy band gap at room temperature is 1.42 eV[Nayak et al. , (2006); Chiang, 1975].Transitions between the valance band and the conduc ...
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... switches can be used for controlling high power devices such as motors, solenoids or lamps, but they can also be used in digital electronics and logic gate circuits. While there are limitations as to what we can switch on and off, transistor switches offer speed, lower cost and substantial reliabili ...
Study The Effect Of Sulfur Atoms On The Electronic Structure
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... GaAs is a direct band gap semiconductor, which means that the minimum of theConduction band is directly over the maximum of the valance band (For undoped GaAs, the energy band gap at room temperature is 1.42 eV[Nayak et al. , (2006); Chiang, 1975].Transitions between the valance band and the conduc ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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