Download Specification Status: Released PolyZen GENERAL DESCRIPTION

PRODUCT: ZEN059V130A24LS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
DOCUMENT: SCD27818
REV LETTER: C
REV DATE: APRIL 26, 2016
PAGE NO.: 1 OF 8
Specification Status: Released
GENERAL DESCRIPTION
TE PolyZen devices are
polymer-enhanced precision
Zener diode micro-assemblies.
They offer resettable protection
against multi-Watt fault events
and spare the need for large
heavy heat sinks.
A unique feature of the PolyZen
micro-assembly is that the
Zener diode is thermally
coupled to a resistively nonlinear, polymer PTC (Positive Temperature Coefficient) layer.
This PTC layer is fully integrated into the device, and is
electrically in series between VIN and the diode clamped VOUT.
BENEFITS
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FEATURES
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This polymer PTC layer responds to either extended diode
heating or overcurrent events by transitioning from a low to
high resistance state, also known as ”tripping”. A tripped PTC
will limit current and generate voltage drop. It helps to protect
both the Zener diode and the follow-on electronics and
effectively increases the diode’s power handling capability.
The Zener diode used for voltage clamping in a PolyZen
micro-assembly was selected due to its relatively flat voltage
vs current response. This helps improve output voltage
clamping, even when input voltage is high and diode current
is large.
Stable Zener diode helps shield downstream
electronics from overvoltage and reverse bias
PTC trip events help to protect the Zener diode
and extend its power handling capability
Analog nature of trip events minimizes
upstream inductive spikes
Minimal power dissipation requirements
Single component placement
Meets USB Suspend Mode current requirement
- 500μA (typ) @ 5.0V
Overvoltage transient suppression
Stable VZ vs fault current
Time delayed, overvoltage and reverse bias trip
Multi-Watt power handling capability
Integrated device construction
RoHS Compliant and Halogen Free
TARGET APPLICATIONS
The polymer-enhanced Zener diode helps protect sensitive
portable electronics from damage caused by inductive
voltage spikes, voltage transients, improper power supplies,
and reverse bias conditions. The PolyZen
ZEN059V130A24LS device is particularly useful for USB
2.0/3.0 powered devices; typically, it draws only 500μA of
operating current in USB Suspend Mode.
TYPICAL USB 2.0/3.0 APPLICATION BLOCK DIAGRAM
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USB 2.0/3.0 powered consumer electronics,
external hard disk drives and solid state
devices
DC power port protection in systems using
barrel jacks for power input
DC power port protection in portable
electronics and navigation devices
DC output voltage regulation
USB 3.0 hubs and adapter cards
Laptops and Desktop PCs
PRODUCT: ZEN059V130A24LS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
DOCUMENT: SCD27818
REV LETTER: C
REV DATE: APRIL 26, 2016
PAGE NO.: 2 OF 8
CONFIGURATION INFORMATION
Pin Configuration (Top View)
2
VIN
Recommended Pad Dimensions
0.94 mm
(0.037”)
GND
2.21 mm
(0.087”)
1
3
0.33 mm
(0.013”)
0.94 mm
(0.037”)
VOUT
0.56 mm
(0.022”)
2.88 mm
(0.1135”)
0.56 mm
(0.022”)
PIN DESCRIPTION
Pin Number
1
2
3
Pin Name
VIN
GND
VOUT
Pin Function
VIN. Protected input to Zener diode.
GND
VOUT. Zener regulated voltage output
BLOCK DIAGRAM
Polymer PTC
VIN
VOUT
Zener
Diode
GND
DEFINITION of TERMS
IPTC
IFLT
IOUT
Trip Event
Trip
Endurance
Current flowing through the PTC portion of the
circuit
RMS fault current flowing through the diode
Current flowing out the VOUT pin of the device
A condition where the PTC transitions to a high
resistance state, thereby significantly limiting I PTC
and related currents, and significantly increasing
the voltage drop between VIN and VOUT.
Time the PTC portion of the device remains both
powered and in a tripped state.
IOUT
IPTC
VIN
VOUT
IFLT
GND
PRODUCT: ZEN059V130A24LS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
DOCUMENT: SCD27818
REV LETTER: C
REV DATE: APRIL 26, 2016
PAGE NO.: 3 OF 8
GENERAL SPECIFICATIONS
Operating Temperature
Storage Temperature
-40º to +85ºC
-40º to +85ºC
ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified)
V Z4
(V)
Izt4
(A)
Min
Typ
Max
5.8
5.9
6.0
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Note 10:
Note 11:
0.1
IHOLD5
@
Operating Current
R Typ6
(Ohms)
20ºC
(A)
1.3
VInt Max8
(V)
Test
Voltage
Max
Current
(mA)
5.0
0.65
0.12
R1Max7
(Ohms)
VINT
Max
(V)
0.15
Tripped Power
Dissipation10
IFLT Max9
Max
Test
Current
(A)
IFLT Max
(A)
Test
Voltage
(V)
Value
(W)
Test
Voltage
(V)
3
+6
-40
+24
-16
1.0
24
24
Electrical characteristics determined at 25ºC unless otherwise specified.
This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device
and may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to,
voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact TE
Connectivity Circuit Protection directly.
Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in your
application may vary.
Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request.
IHOLD : Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a trip event at the
specified temperature. Specification assumes IFLT (current flowing through the Zener diode) is sufficiently low so as to prevent
the diode from acting as a heat source. Testing is conducted with an “open” Zener.
R Typ: Resistance between VIN and VOUT pins during normal operation at room temperature.
R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after 1st trip or after reflow
soldering.
VINT Max: VINT Max relates to the voltage across the PPTC portion of the PolyZen device (V IN-VOUT). VINT Max is defined as
the voltage (VIN-VOUT) at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles
and 24hours trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max testing is conducted using a
"shorted" load (VOUT = 0V). VINT Max is a survivability rating, not a performance rating.
IFLT Max: IFLT Max relates to the stead state current flowing through the diode portion of the PolyZen device in a fault condition,
prior to a trip event. IFLT Max is defined as the current at which typical qualification devices (12 parts per lot from 3 lots)
survived 100 test cycles. RMS fault currents above IFLT Max may permanently damage the diode portion of the PolyZen
device. Testing is conducted with NO load connected to VOUT, such that IOUT = 0. “Test voltage” is defined as the voltage
between VIN to GND and includes the PolyZen Diode drop. Specification is dependent on the direction of current flow through
the diode. IFLT Max is a survivability rating, not a performance rating.
The power dissipated by the device when in the “tripped” state, as measured on TE test boards (see note 3).
Specifications based on limited qualification data and subject to change.
MECHANICAL DIMENSIONS
Length
L
Width
W
Height
H
Length
Diode
Height
Diode
Min
3.85 mm
(0.152”)
3.85 mm
(0.152”)
1.4mm
(0.055”)
Ld
-
Hd
-
Offset
O1
-
Offset
O2
-
Typical
4 mm
(0.16”)
4 mm
(0.16”)
1.7 mm
(0.067”)
3.0 mm
(0.118”)
1.0 mm
(0.039”)
0.6 mm
(0.024”)
0.7 mm
(0.028”)
Max
4.15 mm
(0.163")
4.15 mm
(0.163")
2.0 mm
(0.081”)
-
PRODUCT: ZEN059V130A24LS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
SOLDER REFLOW RECOMMENDATIONS:
Classification Reflow Profiles
Profile Feature
Average Ramp-Up Rate (Tsmax to Tp)
Preheat
• Temperature Min (Tsmin)
• Temperature Max (Tsmax)
• Time (tsmin to tsmax)
Time maintained above:
• Temperature (TL)
• Time (tL)
Peak/Classification Temperature
(Tp)
Time within 5 °C of actual Peak
Temperature (tp)
Ramp-Down Rate
Time 25 °C to Peak Temperature
Reflow Profile
Pb-Free Assembly
3° C/second max.
150 °C
200 °C
60-180 seconds
217 °C
60-150 seconds
260 °C
20-40 seconds
6 °C/second max.
8 minutes max.
DOCUMENT: SCD27818
REV LETTER: C
REV DATE: APRIL 26, 2016
PAGE NO.: 4 OF 8
PRODUCT: ZEN059V130A24LS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
DOCUMENT: SCD27818
REV LETTER: C
REV DATE: APRIL 26, 2016
PAGE NO.: 5 OF 8
PACKAGING
Packaging
ZENXXXVXXXAXXLS
Tape & Reel
3,000
Reel Dimensions for PolyZen Devices
Amax = 330
Nmin = 102
W1 = 8.4
W2 = 11.1
Matte Finish These Area
Nmin
Amax
Taped Component Dimensions for PolyZen Devices
Standard Box
15,000
PRODUCT: ZEN059V130A24LS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
DOCUMENT: SCD27818
REV LETTER: C
REV DATE: APRIL 26, 2016
PAGE NO.: 6 OF 8
TYPICAL CHARACTERISTICS
V (V) or I (A)
Typical Fault Response: ZEN059V130A24LS
24 V/6 A Current Limited Source (IOUT=0)
24
22
20
18
16
14
12
10
8
6
4
2
0
0.00
A
Vinin (V)
A =Vin
(V)
Vout
(V)
B =Vout
(V)
out(V)
C =I IFLT
FLT (A)
(A)
B
C
0.05
0.10
Time (sec)
0.15
PRODUCT: ZEN059V130A24LS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
DOCUMENT: SCD27818
REV LETTER: C
REV DATE: APRIL 26, 2016
PAGE NO.: 7 OF 8
Typical I-V (300 msec pulse)
Typical I-V (300 msec pulse)
10
5
6.0
Current: I FLT (A)
Voltage: V OUT (V)
7.0
5.0
4.0
ZEN059VxxxAxxLS
0
-5
-10
-15
3.0
10
1
0.1
0.01
0.001
0.0001
0.00001
ZEN059VxxxAxxLS
-20
-2
0
Current: IFLT (A)
2
4
6
8
Voltage: VOUT (V)
Vout peak vs. IFLT RMS (IOUT=0)
Time to Trip vs. IFLT RMS (IOUT=0)
7.0
100
Time to Trip (sec)
Vout Peak (V)
ZEN059V130A24LS
6.5
6.0
10
1
0.1
ZEN059V130A24LS
5.5
0.01
0
1
2
3
4
5
6
0
1
2
IFLT RMS (A)
4
5
6
Time To Trip vs. IFLT RMS (IOUT=0)
Vout Peak vs. IFLT RMS (IOUT=0)
100
-0.6
ZEN059V130A24LS
Time To Trip (sec)
ZEN059V130A24LS
-0.8
Vout Peak (V)
3
IFLT RMS (A)
-1.0
-1.2
-1.4
10
1
0.1
0.01
0.001
-40
-30
-20
IFLT RMS (A)
-10
0
-40
-30
-20
IFLT RMS (A)
-10
0
PRODUCT: ZEN059V130A24LS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Temperature Effect on RTYP
Temperature Effect on IHOLD (IFLT = 0)
0.20
2.5
ZENxxxV130A24LS
ZENxxxV130A24LS
0.18
RTYP (Ohms)
2.0
IHOLD (A)
DOCUMENT: SCD27818
REV LETTER: C
REV DATE: APRIL 26, 2016
PAGE NO.: 8 OF 8
1.5
1.0
0.5
0.16
0.14
0.12
0.0
0.10
-40
-20
0
20
40
60
80
100
20
40
o
60
o
Ambient Temperature ( C)
Ambient Temperature ( C)
Time to Trip vs. IPTC RMS (IFLT=0)
10
Time to Trip (sec)
ZENxxxV130A24LS
1
0.1
0.01
0.001
0
10
20
30
40
IPTC RMS (A)
Materials Information
ROHS Compliant
ELV Compliant
Pb-Free
Halogen Free*
HF
* Halogen Free refers to: Br≤900ppm, Cl≤900ppm, Br+Cl≤1500ppm.
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