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Proposal Title
SiC epitaxy of thick epitaxial layers by CVD method.
Proposals Acronym
EPISiC
Thematic Priority: nanosciences_nanotechnologies_materials_and_new_production_technologies
Sub-thematic Priority: nanosciences_and_nanotechnologies
Thematic Priority 1: nanosciences_nanotechnologies_materials_and_new_production_technologies
Sub-thematic Priority 1: materials
Proposal Abstract
Wide band gap semiconductors, such as SiC are attracting much attention because of the increasing
need for high power, high frequency electronic devices. Conventional and modified CVD is the most
commonly used epitaxial growth technique. SiC-based electronic devices and sensors are used in
automotives and modern aircrafts to control engines and monitor emissions in harsh environmental
conditions. Thick epitaxial layers with very low defects densities and good electronic properties are
needed for fabricating high-voltage devices. The development of epi-growth technology enabling
production of SiC epi-layers with thickness of 100 microns is the main aim of the project.
Proposal Description
Epi-Lab at ITME is nvolved in reserach and development of SiC CVD technique applying the new episystem made by Epigress company. Epi-structures of SiC will be used for device fabrication also at
ITME. In the next years this R&D topic will be one of the most important for ITME.
Proposal Objectives
The main aim is to study on SiC CVD growth of thick epi-layers enabling the applications in microelectronics. Modifications of epi-reactor and growth conditions will be needed in order to develope of
material free of characteristic for thick layers structural defects.
Proposed Method
Growth parameters including the type of precursors, growth conditions, reactor innovations, etc will be
examined versus structural quality and electrical parameters of thick SiC epi-layers. Material
characterisation will be realised using the most advanced characterisation tools as well as device
measurements.
Proposal Added Value
SiC epi-structures are very modern material for micro-electronics. New research results help to
understand of process of SiC crystalisation and to develope production of this attractive product.
Proposal Impact
Application of SiC is very attractive for human being because of possible decreasing in power
consumption. Leading industrial companies are located mainly in USA. Development of SiC
technology will enable to take high profit from industrial production of SiC elements in Europe and in
Poland.
Role: partner
Research Group Resources Description
Research team involved in SiC epitaxy includes 4 senior scientists (PhD), 4 PhD students and 2
techniciens. The Epigress new epi-system for epitaxy of SiC is applied located in high-class clean
room laboratory fully equipped with pheripherals suitable for semiconductor nano-technology.