Download QS5U28

QS5U28
Transistor
2.5V Drive Pch+SBD MOS FET
QS5U28
zStructure
Silicon P-channel MOS FET
Schottky Barrier DIODE
zExternal dimensions (Unit : mm)
TSMT5
1.0MAX
2.9
1.9
0.95 0.95
(5)
(4)
(2)
(3)
0.7
1.6
2.8
zFeatures
1) The QS5U28 combines Pch MOS FET with
a Schottky barrier diode in TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
0.85
0.4
0~0.1
0.3~0.6
(1)
0.16
Each lead has same dimensions
Abbreviated symbol : U28
zApplications
Load switch, DC/DC conversion
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
zEquivalent circuit
Taping
(5)
(4)
TR
3000
∗2
QS5U28
∗1
(1)
∗1 ESD protection diode
∗2 Body diode
(2)
(3)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
∗ A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Rev.A
1/4
QS5U28
Transistor
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Channel temperature
Power dispation
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Tch
PD ∗3
Limits
−20
±12
±2.0
±8.0
−1.0
−8.0
150
0.9
Unit
V
V
A
A
A
A
°C
W /ELEMENT
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Symbol
VRM
VR
IF
IFSM ∗2
Tj
Limits
25
20
1.0
3.0
150
Unit
V
V
A
A
°C
0.7
W /ELEMENT
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
<Di >
PD
Power dispation
∗3
<MOSFET AND Di >
Parameter
Symbol
PD ∗3
Tstg
Total power dispation
Range of strage temperature
Limits
Unit
1.25
−55 to +150
W / TOTAL
°C
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz • 1cyc. ∗3 Mounted on a ceramic board.
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min.
Gate-source leakage
−
IGSS
Drain-source breakdown voltage V(BR) DSS −20
Zero gate voltage drain current
−
IDSS
Gate threshold voltage
VGS (th) −0.7
−
Static drain-source on-starte
∗
−
RDS (on)
resistance
−
Forward transfer admittance
Yfs ∗ 1.6
Input capacitance
Ciss
−
Output capacitance
−
Coss
Reverse transfer capacitance
−
Crss
Turn-on delay time
−
td (on) ∗
Rise time
tr ∗
−
Turn-off delay time
−
td (off) ∗
Fall time
−
tf ∗
Total gate charge
Qg
∗
−
4.8
−
nC
Gate-source charge
Qgs
∗
−
1.0
−
nC
∗
−
1.3
−
nC
Conditions
VGS= ±12V, VDS= 0V
ID= −1mA, VGS= 0V
VDS= −20V, VGS= 0V
VDS= −10V, ID= −1mA
ID= −2A, VGS= −4.5V
ID= −2A, VGS= −4.0V
ID= −1A, VGS= −2.5V
VDS= −10V, ID= −1A
VDS= −10V
VGS= 0V
f=1MHz
VDD −15V
VGS= −4.5V
ID= −1A
RL= 15Ω
RG= 10Ω
VDD −15V
VGS= −4.5V
ID= −2A
RL= 7.5Ω
RG= 10Ω
Symbol
VSD
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
IS= −1.0V , VGS= 0V
Symbol
VF
Min.
−
Typ.
−
Max.
0.45
Unit
V
IF= −1.0V
IR
−
−
200
µA
VR= 20V
Gate-drain charge
Qgd
Typ.
−
−
−
−
90
97
175
−
450
70
52
10
16
32
15
Max.
±10
−
−1
−2.0
125
135
245
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
∗ Pulsed
<MOSFET> Body diode (Source-drain)
Parameter
Forward voltage
<Di>
Parameter
Forward voltage
Reverse current
Conditions
Rev.A
2/4
QS5U28
Transistor
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VDS= −10V
Pulsed
1
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS= −4.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
100
10
0.01
1
VGS= −4V
Pulsed
Ta=125°C
75°C
25°C
−25°C
100
10
0.01
10
0.1
1
10
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (Ι)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙ)
VGS= −2.5V
Pulsed
100
Ta=125°C
75°C
25°C
−25°C
10
0.01
0.1
1
500
400
300
200
100
0
10
0
0
0.2
0.4
0.6 0.8
1.0
1.2
1.4
6
1000
CAPACITANCE : C (pF)
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
4
8
10
12
Ta=25°C
Pulsed
100
VGS=−2.5V
−4.0V
−4.5V
10
0.01
1.6
100
Coss
Crss
10
0.01
0.1
1
10
100
1
10
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
1000
Ta=25°C
f=1MHZ
VGS=0V
Ciss
0.1
DRAIN CURRENT : −ID (A)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
VGS=0V
Pulsed
1
2
1000
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙΙ)
10
Ta=25°C
Pulsed
ID= −1A
ID= −2A
SWITCHING TIME : t (ns)
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : −ID (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
REVERCE DRAIN CURRENT : −IDR (A)
0.1
1000
GATE-SOURCE VOLTAGE : −VGS (V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : −ID (A)
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
zElectrical characteristic curves
Ta=25°C
VDD= −15V
VGS= −4.5V
RG=10Ω
Pulsed
tf
100
td(off)
td(on)
10
tr
1
0.01
0.1
1
10
SOURCE-DRAIN VOLTAGE : −VSD (V)
DRAIN-SOURCE VOLTAGE : −VDS (V)
DRAIN CURRENT : −ID (A)
Fig.7 Reverse Drain Current vs.
Source-Drain Voltage
Fig.8 Typical Capacitance vs.
Drain-Source Voltage
Fig.9 Switching Characteristics
Rev.A
3/4
QS5U28
GATE-SOURCE VOLTAGE : −VGS (V)
Transistor
8
Ta=25°C
VDD= −15V
ID= −2A
RG=10Ω
Pulsed
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Dynamic Input Characteristics
zMeasurement circuits
Pulse Width
VGS
ID
VDS
VGS
10%
50%
90%
RL
D.U.T.
50%
10%
10%
RG
VDD
VDS
90%
td(on)
tr
ton
Fig.11 Switching Time Measurement Circuit
90%
td(off)
tr
toff
Fig.12 Switching Waveforms
VG
VGS
ID
VDS
RL
IG(Const)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.13 Gate Charge Measurement Circuit
Fig.14 Gate Charge Waveforms
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1