Download 2SK3018

2SK3018
Transistor
2.5V Drive Nch MOS FET
2SK3018
zExternal dimensions (Unit : mm)
zStructure
Silicon N-channel
MOSFET
UMT3
2.0
0.9
0.2
0.3
0.7
1.25
(1)
(2)
0.1Min.
zApplications
Interfacing, switching (30V, 100mA)
2.1
(3)
0.65 0.65
1.3
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Source
Each lead has same dimensions
(2) Gate
Abbreviated symbol : KN
(3) Drain
zPackaging specifications
Package
Type
0.15
zEquivalent circuit
Taping
Code
T106
Basic ordering unit
(pieces)
3000
Drain
2SK3018
Gate
∗ Gate
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Parameter
Drain current
Continuous
ID
±100
Pulsed
IDP∗1
±400
mA
PD∗2
200
mW
Total power dissipation
Protection
Diode
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
mA
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
Source
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
zThermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ∗
Limits
Unit
625
°C / W
∗ With each pin mounted on the recommended lands.
Rev.B
1/3
2SK3018
Transistor
zElectrical characteristics (Ta=25°C)
Parameter
Min.
Typ.
Max.
Unit
IGSS
−
−
±1
µA
VGS = ±20V, VDS = 0V
V(BR)DSS
30
−
−
V
ID = 10µA, VGS = 0V
Symbol
Gate-source leakage
Drain-source breakdown voltage
Conditions
IDSS
−
−
1
µA
VDS = 30V, VGS = 0V
Gate threshold voltage
VGS(th)
0.8
−
1.5
V
VDS = 3V, ID = 100µA
Static drain-source on-state
resistance
RDS(on)
−
5
8
Ω
ID = 10mA, VGS = 4V
RDS(on)
−
7
13
Ω
ID = 1mA, VGS = 2.5V
Forward transfer admittance
|Yfs |
20
−
−
mS
VDS = 3V, ID = 10mA
Input capacitance
Ciss
−
13
−
pF
VDS = 5V
Output capacitance
Coss
−
9
−
pF
VGS = 0V
Reverse transfer capacitance
Crss
−
4
−
pF
f = 1MHz
Turn-on delay time
td(on)
−
15
−
ns
ID = 10mA, VDD
tr
−
35
−
ns
VGS = 5V
td(off)
−
80
−
ns
RL = 500Ω
tf
−
80
−
ns
RG = 10Ω
Zero gate voltage drain current
Rise time
Turn-off delay time
Fall time
5V
0.15
200m
Ta=25°C
Pulsed
3.5V
50m
0.1
2.5V
0.05
2V
1
2
20m
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
1m
0.5m
0.2m
VGS=1.5V
0
0
VDS=3V
Pulsed
100m
3
4
0.1m
0
5
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical output characteristics
20
10
50
VGS=4V
Pulsed
Ta=125°C
75°C
25°C
−25°C
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current ( Ι )
3
2
4
1.5
1
0.5
0
−50 −25
0.5
20
10
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
DRAIN CURRENT : ID (A)
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
0
25
50
75
100
125 150
Fig.3 Gate threshold voltage vs.
channel temperature
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
VDS=3V
ID=0.1mA
Pulsed
CHANNEL TEMPERATURE : Tch (°C)
Fig.2 Typical transfer characteristics
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
50
1
2
GATE-SOURCE VOLTAGE : VGS (V)
0.5
15
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
3V
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
4V
GATE THRESHOLD VOLTAGE : VGS(th) (V)
zElectrical characteristic curves
Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
Rev.B
2/3
2SK3018
Transistor
0.5
VDS=3V
Pulsed
0.2
ID=100mA
6
ID=50mA
5
4
3
2
Ta=−25°C
25°C
75°C
125°C
0.1
0.05
0.02
0.01
0.005
1
0.002
0
−50 −25
0.001
0.0001 0.0002
0
25
50
75
100 125
150
20m
0V
5m
2m
5m
2m
1m
0.5m
0.2m
0.1m
0
1m
0.5m
10
Coss
Crss
2
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Ciss
5
Ta=125°C
75°C
25°C
−25°C
10m
0.5
Fig.9 Reverse drain current vs.
source-drain voltage ( Ι )
1000
Ta=25°C
f=1MHZ
VGS=0V
20
50m
CAPACITANCE : C (pF)
REVERSE DRAIN CURRENT : IDR (A)
50
Ta=25°C
Pulsed
VGS=4V
50m
Fig.8 Forward transfer
admittance vs. drain current
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
100m
0.05 0.1 0.2
0.005 0.01 0.02
VGS=0V
Pulsed
20m
DRAIN CURRENT : ID (A)
CHANNEL TEMPERATURE : Tch (°C)
200m
0.0005 0.001 0.002
200m
100m
1
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
Pulsed
tf
500
SWITCHING TIME : t (ns)
7
10m
REVERSE DRAIN CURRENT : IDR (A)
VGS=4V
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
9
8
td(off)
200
100
50
20
tr
td(on)
10
5
0.2m
0.5
0.1
0.1m
0
0.5
1
1.5
0.2
0.5
1
2
5
10
20
50
2
0.1 0.2
DRAIN-SOURCE VOLTAGE : VDS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.11 Typical capacitance vs.
drain-source voltage
Fig.10 Reverse drain current vs.
source-drain voltage ( ΙΙ )
0.5
1
2
5
10
20
50
100
DRAIN CURRENT : ID (mA)
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
zSwitching characteristics measurement circuit
Pulse width
VGS
RG
VGS
ID
D.U.T.
VDS
RL
50%
10%
VDS
VDD
10%
90%
90%
tr
td(on)
ton
Fig.13 Switching time measurement circuit
90%
50%
10%
td(off)
tf
toff
Fig.14 Switching time waveforms
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1