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Transcript
US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions (Unit : mm) TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. 4) Built-in Low VF schottky barrier diode. 0.2Max. 1.3 Abbreviated symbol : U02 zApplications Switching zPackaging specifications zInner circuit Package Type (5) Taping (4) TR Code Basic ordering unit (pieces) 3000 US5U2 ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Power dissipation PD Channel temperature Tch ∗2 Limits 30 20 ±1.4 ±5.6 0.6 5.6 Unit V V A A A A 0.7 W / ELEMENT 150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Rev.B 1/4 US5U2 Transistors <Di> Parameter Repetitive peak reverse voltage Reverse voltage Forward current Symbol VRM VR IF IFSM PD Forward current surge peak Power dissipation Junction temperature Limits 30 20 0.5 Unit V V A 2.0 0.5 A W / ELEMENT °C ∗1 ∗2 Tj 150 Symbol Limits Unit 1.0 −55 to +150 W / TOTAL °C ∗1 60Hz 1cycle ∗2 Mounted on ceramic board <MOSFET and Di> Parameter PD ∗1 Tstg Total power dissipation Range of storage temperature ∗1 Mounted on a ceramic board zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 30 − 1.0 − − − 1.0 − − − − − − − − − − Typ. Max. − − − − 170 250 270 − 70 15 12 6 6 13 8 1.4 0.6 0.3 10 − 1 2.5 240 350 380 − − − − − − − − 2.0 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.4A, VGS= 10V ID= 1.4A, VGS= 4.5V ID= 1.4A, VGS= 4V VDS= 10V, ID= 1.4A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.7A VGS= 10V RL= 21Ω RG=10Ω VDD 15V, VGS= 5V ID= 1.4A RL= 11Ω, RG= 10Ω Conditions Typ. − Max. 1.2 Unit V Conditions IS= 0.6A, VGS=0V Typ. − Max. 0.36 Unit V IF= 0.1A − − 0.47 V IF 0.5A − − 100 µA VR= 20V ∗Pulsed <Body diode characteristics (source-drain)> Parameter Symbol Min. Forward voltage VSD − <Di> Parameter Symbol Forward voltage VF Reverse current IR Min. − Conditions Rev.B 2/4 US5U2 Transistors zElectrical characteristics curves SWITCHING TIME : t (ns) 100 Ciss 10 Coss Crss Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed tf 100 td(off) 10 td(on) tr 0.1 1 10 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Typical Capacitance vs. Drain-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (mΩ) Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 800 25°C −25°C 100 DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 4 3 2 1 10 1 0 2 3 DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 10 VGS=0V Pulsed Ta=25°C Pulsed ID=0.7A 600 500 400 300 200 1 Ta=125°C 75°C 25°C −25°C 0.1 100 2 4 6 8 0.01 0.0 10 10000 VGS=4.5V Pulsed Ta=125°C 75°C 1000 25°C −25°C 100 10 0.01 0.1 1 DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.6 Source Current vs. Source-Drain Voltage Fig.5 Static Drain-Source On-State Resistance vs. Gate-source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 75°C 1 5 GATE-SOURCE VOLTAGE : VGS (V) VGS=10V Pulsed 0.1 6 10 ID=1.4A 0 0 4.0 Ta=125°C 10 0.01 1 700 Fig.4 Typical Transfer Characteristics 1000 0.1 900 GATE-SOURCE VOLTAGE : VGS (V) 10000 7 1000 VDS=10V Pulsed 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) 10 ID=1.4A 8 RG=10Ω Pulsed 0 1 0.01 100 Ta=25°C 9 VDD=15V SOURCE CURRENT : IS (A) 1 0.01 10 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) CAPACITANCE : C (pF) 10 1000 Ta=25°C f=1MHz VGS=0V GATE-SOURCE VOLTAGE : VGS (V) 1000 VGS=4V Pulsed Ta=125°C 75°C 1000 25°C −25°C 100 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) Rev.B 3/4 US5U2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Transistors 1000 Ta=25°C Pulsed VGS=4V VGS=4.5V VGS=10V 100 0.1 1 10 DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1
