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Transcript
AN10289
LPC900 external crystal start-up
Rev. 01 — 27 April 2004
Document information
Info
Content
Keywords
LPC900, external crystal
Abstract
LPC900 external crystal start-up
Application note
AN10289
Philips Semiconductors
LPC900 external crystal start-up
Revision history
Rev
Date
Description
01
20040427
Initial version (9397 750 13134)
Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, please send an email to: [email protected]
9397 750 13134
Application note
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 27 April 2004
2 of 12
AN10289
Philips Semiconductors
LPC900 external crystal start-up
1. Introduction
The LPC900 family high frequency crystal oscillator consists of an inverting linear
transconductance amplifier that is capable of amplifying signals from 4 MHz to 12 MHz.
Integral to the amplifier is a feedback resistor that is connected from the input to the output
of the amplifier.
1.1 Scope
This document will describe how to bias the high frequency crystal oscillator of the
LPC900 family by adding an external biasing resistor. Biasing the external crystal
oscillator will result in a more robust start-up.
This document takes a close look at the characteristics of the LPC900 high frequency
oscillator such as the DC characteristics of the LPC900 family’s high frequency oscillator
and the open circuit biasing point of the high frequency oscillator. Equations will be given
to calculate the minimum gm required with a certain shunt capacitance.
2. LPC900 family high frequency oscillator characteristics
2.1 Oscillator feedback resistor
The typical value of the feedback resistor between the in and output of the inverter range
from 1.3 M: to 1.5 M:. The feedback resistor is shown in Figure 2.
2.2 DC transfer characteristics
The buffer's DC transfer characteristics were measured for a group of parts. Figure 1
shows typical DC transfer characteristics of the high frequency oscillator on the LPC900
family. The two horizontal lines on the graph indicate the output voltage range of the buffer
in the open state. The graph indicates that the DC operating point is not in the centre of
the linear region. In fact, it is near the bottom where the gain is slightly smaller.
9397 750 13134
Application note
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 27 April 2004
3 of 12
AN10289
Philips Semiconductors
LPC900 external crystal start-up
Crystal Inverter DC transfer curve
part 1
part 2
3.5
part 3
Vout (Volts)
3
part 4
2.5
part 5
2
part 6
part 7
1.5
part 8
1
part 9
0.5
part 10
0
open circuit dc bias min
0.7
0.75
0.8
0.85
0.9
open circuit dc bias max
Vin (Volts)
Fig 1. Crystal inverter DC characteristics
2.3 Small signal output impedance
Another measurement that was made on a group of parts was the small signal output
impedance. This was done by AC coupling a signal into the output, and then measuring
the ratio of the output voltage to the input voltage. Figure 2 shows the test circuit used to
measure the output impedance and also the equation to calculate it based on the output
to input voltage.
9397 750 13134
Application note
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 27 April 2004
4 of 12
AN10289
Philips Semiconductors
LPC900 external crystal start-up
Vout
Crystal Oscillator buffer
1uF
Rout
Rin = 110
Vin
1uF
Vin
Vout
Vin
Vout
1
Vin
Rin ˜
output impedance
Fig 2. Output impedance small signal test set up
The data for this measurement ranged from 2 k: to 5 k: for the LPC900 family high
frequency oscillator.
2.4 Small signal transconductance
The small signal transconductance was measured by AC coupling a fixed load to the
output, then measuring the ratio of the output current to the input current. Figure 2 shows
the test circuit used to measure the transconductance, and the equation to calculate it
based on the output to input voltage. The measurements ranged from 0.0022 to 0.0029
when biased in the ‘open’ configuration; that is, it is not biased with external components.
9397 750 13134
Application note
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 27 April 2004
5 of 12
AN10289
Philips Semiconductors
LPC900 external crystal start-up
Crystal Oscillator buffer
Vout
1uF
Rout
Vin
1uF
Rin = 110
Vin
Transcondu ctance
Vout
110
Vin
Fig 3. Transconductance measurement set-up
2.5 Bias point adjustment
When looking at the DC transfer curves the natural bias point of the high frequency
oscillator did not provide the maximum gain for start up. The open circuit output voltage of
the buffer ranged from 0.77 V to 0.79 V. This puts the small signal gain on the shallow part
of the curve.
The DC operating point can be changed by putting a 1 M: resistor to ground on the input
side of the oscillator buffer. This resistor is a external part and is labelled as Rbias in
Figure 5.
By adding this resistor, the DC operating point of the buffer is centred in the middle of the
linear region of the buffer, by biasing the crystal oscillator to the maximum gain region it
will make start-up more robust.
9397 750 13134
Application note
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 27 April 2004
6 of 12
AN10289
Philips Semiconductors
LPC900 external crystal start-up
C rystal Inverter D C transfer C h aracteristics
p a rt 2
3
p a rt 3
p a rt 4
2 .5
p a rt 5
p a rt 6
Vout (Volts)
2
p a rt 7
1 .5
p a rt 8
p a rt 9
1
p a rt 1 0
o p e n circu it b ia s
m in
o p e n circu it b ia s
m ax
1 Mo h m b ia s lin e
0 .5
0
0 .7
0 .7 5
0 .8
0 .8 5
0 .9
V in (V olts)
Fig 4. Measured inverter DC transfer characteristics with 1 M: bias line
2.6 Minimum required transconductance
The minimum required transconductance for oscillation can be calculated from the
formula shown in Equations (1) and (2). This equation is taken from [2], application note
AN97090:
(1)
Z O2 CO2 C1 C2 1 C1 C2 1 C1
g m t RS ˜
C1C2
RP C1C2
RO C2
2
2
If C1 = C2, this equation reduces to:
(2)
g m t 4 ˜ RS ˜ Z O2 CO2 4
1
RP RO
Equations (1) and (2) - Minimum requirements with no bias resistor.
However, adding the bias resistor on the input side to ground increases the
requirements. The equation for minimum requirements with the bias resistor is shown in
Equations (3) and (4):
9397 750 13134
Application note
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 27 April 2004
7 of 12
AN10289
Philips Semiconductors
LPC900 external crystal start-up
(3)
Z O2 CO2 C1 C2 1 C1 C2 1 C1
1 C2
g m t RS ˜
C1C2
RP C1C2
RO C2 RBias C1
2
2
If C1 = C2, this equation reduces to:
(4)
g m t 4 ˜ RS ˜ Z O2 CO2 4
1
1
RP RO RBias
Equations (3) and (4) - Minimum requirements with bias resistor.
Crystal Model
L1
Ca
Rs
CO
Crystal Oscillator buffer
Rp
Ro
Rbias
C2
C1
Fig 5. Oscillator circuit
2.7 Calculated gm requirements
Using the equations shown above, Table 1 shows the minimum gm required compared to
what was measured.
Table 1:
gm calculations
F0 = 12 MHz
Rs = 3K
Rp = 1.3 M:
Co = 15 pF
Rbias = none
gm t 0.000387
gm measured min 0.0022
Rbias = 1M:
gm t 0.000388
gm measured min 0.0031
The data in Table 1 shows that the part has significantly more gain than required with the
1 M: bias resistor. Rbias is the added external resistor to centre the oscillator buffer DC
bias in the center of the linear region.
2.8 Additional gm verification test
Figure 6 shows a graph of the minimum gm required as a function of C1 with a fixed C2
shunt capacitance. Also plotted on this graph are the min and max measured gm from a
sample of parts. It shows that the part should stop oscillating with a shunt capacitance
9397 750 13134
Application note
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 27 April 2004
8 of 12
AN10289
Philips Semiconductors
LPC900 external crystal start-up
between 65 pF and 85 pF. A test circuit showed that oscillations stopped with
approximately 80 pF for C1. This was another verification that the measured gm was
within the correct range.
Required transconductance as a function of input shunt capacitance
(output shunt C2 capacitace fixed at 12pF)
Min Gm requirement
0.0040000
Min Measured Gm
Required Transconductance
0.0035000
Max Measured Gm
0.0030000
0.0025000
0.0020000
0.0015000
0.0010000
0.0005000
0.0000000
0.0E+00
2.0E-11
4.0E-11
6.0E-11
8.0E-11
1.0E-10
C1 Shunt Capacitance (F)
Fig 6. Graph of min gm required as a function of shunt capacitance C1 with C2 fixed
2.9 Bias resistor testing
Besides the calculations that were presented in this paper, the oscillator start up was also
verified over temperature using the external bias 1 M: bias resistor. The temperature was
adjusted from 55 qC to +125 qC and started over the full temperature range.
3. Conclusions
The oscillator DC characteristics shows that the dc bias point was toward the bottom side
of the transfer curve. This indicated that the start up gain of the oscillator could be slightly
lower.Using an additional external resistor to raise the bias point to the centre of the
inverter’s linear region improves the start-up gain. This resistor increases the gm
requirements slightly, but the part has adequate margin to overcome this increase.
9397 750 13134
Application note
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 27 April 2004
9 of 12
AN10289
Philips Semiconductors
LPC900 external crystal start-up
3.1 Important note
Every crystal circuit will vary with the main variables being the selected crystal the shunt
capacitors the microcontroller’s oscillator characteristics and the PCB’s board capacitance
and noise immunity on the crystal pins.
All these variables will influence the crystal start-up of an application, care has to be taken
to qualify the crystal start-up of each application.
4. References
[1]
X-tal oscillator on 8 bit microcontrollers AN96103 — Audre Pauptit, Erik
Norberg, Application note, 20 Sept 1996, Draft, Philips System laboratory group,
Eindhoven the Netherlands, Telecom products group, Zuerich.
[2]
X-tal oscillators on 8 bit microcontrollers (2) AN97090 — Audre Pauptit, Wim
Rosink, , Application note, 11 Dec 1997, Draft, Philips System laboratory group,
Eindhoven the Netherlands.
9397 750 13134
Application note
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 27 April 2004
10 of 12
AN10289
Philips Semiconductors
LPC900 external crystal start-up
5. Disclaimers
Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of
these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these
products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages
resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits,
standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product
is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys
no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties
that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
9397 750 13134
Application note
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rev. 01 — 27 April 2004
11 of 12
AN10289
Philips Semiconductors
LPC900 external crystal start-up
6. Contents
1
1.1
1.2
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
3.1
4
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Scope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
LPC900 family high frequency oscillator
characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Oscillator feedback resistor . . . . . . . . . . . . . . . 3
DC transfer characteristics . . . . . . . . . . . . . . . . 3
Small signal output impedance. . . . . . . . . . . . . 4
Small signal transconductance . . . . . . . . . . . . . 5
Bias point adjustment . . . . . . . . . . . . . . . . . . . . 6
Minimum required transconductance . . . . . . . . 7
Calculated gm requirements . . . . . . . . . . . . . . . 8
Additional gm verification test . . . . . . . . . . . . . . 8
Bias resistor testing . . . . . . . . . . . . . . . . . . . . . 9
Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Important note. . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 27 April 2004
Document order number: 9397 750 13134
Published in U.S.A.