Portable Appliance Testing Course Pre-Study Revision
... The candidate will need to understand basic numeric prefixes used with electrical symbols and measurement units i.e.… milli (m) a thousandth e.g. 3mA : three thousandths of an amp kilo (k) a thousand times e.g. 100k : one hundred thousand ohms mega (M) a million times e.g. 2M : two million ohms ...
... The candidate will need to understand basic numeric prefixes used with electrical symbols and measurement units i.e.… milli (m) a thousandth e.g. 3mA : three thousandths of an amp kilo (k) a thousand times e.g. 100k : one hundred thousand ohms mega (M) a million times e.g. 2M : two million ohms ...
ECE122 – Digital Electronics & Design
... principle) after the input voltages have been applied for an infinite amount of time. DC Transfer Analysis: It is used to study the voltage or current at one set of points in a circuit as a function of the voltage or current at another set of points. This is done by sweeping the source variables ove ...
... principle) after the input voltages have been applied for an infinite amount of time. DC Transfer Analysis: It is used to study the voltage or current at one set of points in a circuit as a function of the voltage or current at another set of points. This is done by sweeping the source variables ove ...
1. dia - Shrek
... The most difficult part of making resistivity measurements is often making good electric contacts to the sample. The measurement system should be calibrated before measuring any material samples. Calibration procedures are usually described in the equipment manuals. The input resistance (or “impedan ...
... The most difficult part of making resistivity measurements is often making good electric contacts to the sample. The measurement system should be calibrated before measuring any material samples. Calibration procedures are usually described in the equipment manuals. The input resistance (or “impedan ...
problems
... Write an expression for the dynamic energy per clock cycle. (b) If G.VDD2 is the static power, where G mho is the total leakage conductance of the circuit, then write an expressions for the static energy per clock cycle. (c) For C = 20 nF, G = 20 mho and Vth = 0.3 volt, determine the supply voltage ...
... Write an expression for the dynamic energy per clock cycle. (b) If G.VDD2 is the static power, where G mho is the total leakage conductance of the circuit, then write an expressions for the static energy per clock cycle. (c) For C = 20 nF, G = 20 mho and Vth = 0.3 volt, determine the supply voltage ...
-1.5 -1.0 -0.5 0.0 0.5 10 10 10 10 10 10 Lg=200nm Wfin=20nm
... FinFET double-gate (DG) device structure, as well as the single-gate, ultra-thin body (UTB) SOI MOSFET device structure. In both of these device structures, short channel effects are effectively controlled by using a thin silicon film, allowing for gate-length scaling down to the 10 nm regime [1]. I ...
... FinFET double-gate (DG) device structure, as well as the single-gate, ultra-thin body (UTB) SOI MOSFET device structure. In both of these device structures, short channel effects are effectively controlled by using a thin silicon film, allowing for gate-length scaling down to the 10 nm regime [1]. I ...
resume - gate4india.com
... Operating system: Solaris. My Role: Design a converter to convert the H-spice net list to the Verilog switch level. The LEX file declares the tokens to be parsed from the input file. The YACC file declares and checks the grammar for the extracted tokens if grammar matches the token will be parsed. T ...
... Operating system: Solaris. My Role: Design a converter to convert the H-spice net list to the Verilog switch level. The LEX file declares the tokens to be parsed from the input file. The YACC file declares and checks the grammar for the extracted tokens if grammar matches the token will be parsed. T ...
ms-word
... Drive the input with a DC current source of 1 A. Perform a transient analysis of about 10ns. Use “.IC V(in)=0” to set the initial condition at the input Use the following measure statements to calculate the capacitance: .MEASURE t1 TRIG AT=0 TARG V(in) VAL=1.25 CROSS=1 .MEASURE CinLH PARAM= ...
... Drive the input with a DC current source of 1 A. Perform a transient analysis of about 10ns. Use “.IC V(in)=0” to set the initial condition at the input Use the following measure statements to calculate the capacitance: .MEASURE t1 TRIG AT=0 TARG V(in) VAL=1.25 CROSS=1 .MEASURE CinLH PARAM= ...
IOSR Journal of Electronics and Communication Engineering (IOSR-JECE)
... circuit is either discharged or it will stay precharged. Since in dynamic logic every output node must be precharged every clock cycle, some nodes are precharged only to be immediately discharged again as the node is evaluated, leading to higher switching power dissipation .One major advantage of th ...
... circuit is either discharged or it will stay precharged. Since in dynamic logic every output node must be precharged every clock cycle, some nodes are precharged only to be immediately discharged again as the node is evaluated, leading to higher switching power dissipation .One major advantage of th ...
Ohm’s Law Lab (60 points)
... Put away everything neatly after you are done. (5 points) Data: (20 points) Theoretical Resistance ‘R’ () ...
... Put away everything neatly after you are done. (5 points) Data: (20 points) Theoretical Resistance ‘R’ () ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.