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Transcript
An Integrated Picosecond Pulse Generation Circuit
Description
This invention features an on-chip picosecond pulse generator that can be implemented using
complementary metal-oxide-semiconductor (CMOS). The transmission line, the switching device, and
the trigger circuit are located on a common semiconductor substrate (CMOS) using standard CMOS
technology. The pulse width and amplitude of the output pulse can be modified using the length of the
transmission line and on the charging voltage applied to the transmission line. Additional components
can be provided on the common semiconductor substrate or chip to shape the input pulse to the
switching device to ensure a fast rise time.
Applications:
 High-speed analog-to-digital converters (ADC) and high-speed
characterization using time-domain-reflectometry (TDR)
 Circuits where control over pulse width and amplitude is required
 Generating pulse having desired fast rise time
circuit
component
Benefits:
 Generates output pulse having a desired pulse width and amplitude by varying transmission line
length and charging voltage
 Convert an input signal provided by an input signal generator into an input pulse having a
desired fast rise time
Inventors:
Protection Status:
Licensing Status:
CURF reference:
For more information:
Pingshan Wang
Patent issued; #8,149,039
This technology is available for licensing
08-053
[email protected]
864.656.4237
www.clemson.edu/curf