Electrical principles: math for electronics, electronic principles
... DC and the current is 10 amperes. (T5C09) P = E × I or 13.8 V × 10 A = 138 W When the applied voltage in a circuit is 12 volts DC and the current is 2.5 amperes, the power being used is 30 watts. (T5C10) P = E × I or 12 V × 2.5 A = 30 W Just as with Ohm’s Law, you can use algebra to come up with oth ...
... DC and the current is 10 amperes. (T5C09) P = E × I or 13.8 V × 10 A = 138 W When the applied voltage in a circuit is 12 volts DC and the current is 2.5 amperes, the power being used is 30 watts. (T5C10) P = E × I or 12 V × 2.5 A = 30 W Just as with Ohm’s Law, you can use algebra to come up with oth ...
smith_wangaDAC2
... by 400mV over -40C to 85C (3.2 mV/˚C) • 1.1V reference varies by 150mV over -40C to 85C (1.2 mV/˚C) ...
... by 400mV over -40C to 85C (3.2 mV/˚C) • 1.1V reference varies by 150mV over -40C to 85C (1.2 mV/˚C) ...
EECS150 - Digital Design Lecture 7 – CMOS Implementation
... Pull-up and pull-down networks should never both be on - else, short circuit! Implications: (1) Pull-up and pull-down networks are complementary (2) Pull-up and pull-down networks are topological duals ...
... Pull-up and pull-down networks should never both be on - else, short circuit! Implications: (1) Pull-up and pull-down networks are complementary (2) Pull-up and pull-down networks are topological duals ...
9th Physical Science
... • I can define common electricity terms such as current, voltage, resistance, power. • I can measure current and voltage in a circuit. • I can apply Ohm's Law to calculate voltage, current or resistance. • I can identify circuits as series, parallel, or combination. • I can calculate total resistanc ...
... • I can define common electricity terms such as current, voltage, resistance, power. • I can measure current and voltage in a circuit. • I can apply Ohm's Law to calculate voltage, current or resistance. • I can identify circuits as series, parallel, or combination. • I can calculate total resistanc ...
Lecture 24
... • Complementary PMOS and NMOS switches in parallel or in series with complementary logic to form high speed, low power logic • PMOS devices turn on with low voltages, so we use them in the pull up circuit for a gate • NMOS devices turn on with high voltages, so we use them in the pull down circuit f ...
... • Complementary PMOS and NMOS switches in parallel or in series with complementary logic to form high speed, low power logic • PMOS devices turn on with low voltages, so we use them in the pull up circuit for a gate • NMOS devices turn on with high voltages, so we use them in the pull down circuit f ...
TIGER ELECTRONIC CO.,LTD
... typically 50W music power into 4 ohm load over 1 sec at V S =22.5V, f = 1KHz. The high power and very low harmonic and crossover distortion (THD = 0.05% typ, @ V S = ±22V, P O = 0.1 to 15W, R L =8ohm, f = 100Hz to 15KHz) make the device most suitable for both HiFi and high class TV sets. ...
... typically 50W music power into 4 ohm load over 1 sec at V S =22.5V, f = 1KHz. The high power and very low harmonic and crossover distortion (THD = 0.05% typ, @ V S = ±22V, P O = 0.1 to 15W, R L =8ohm, f = 100Hz to 15KHz) make the device most suitable for both HiFi and high class TV sets. ...
Document
... M.W. Allam, M. I. Elmasry, “ Dynamic current mode logic (DyMCL): A new lowpower high performance logic style,” IEEE J. Solid State Circuits, Vol. 36, No. 3, pp. ...
... M.W. Allam, M. I. Elmasry, “ Dynamic current mode logic (DyMCL): A new lowpower high performance logic style,” IEEE J. Solid State Circuits, Vol. 36, No. 3, pp. ...
Use this Link to See the Complete 2N343 FACT SHEET
... technology used for these first silicon transistors was soon superseded by more advanced technologies such as diffused/mesa and planar. The line of related devices numbered from 2N339 through 2N343 differed primarily in breakdown voltage and gain, and the 2N343 was the highest performing type. The m ...
... technology used for these first silicon transistors was soon superseded by more advanced technologies such as diffused/mesa and planar. The line of related devices numbered from 2N339 through 2N343 differed primarily in breakdown voltage and gain, and the 2N343 was the highest performing type. The m ...
PDF
... For every set of input logic values, either pullup or pulldown network makes connection to VDD or GND • If both connected, power rails would be shorted together • If neither connected, output would float (tristate logic) ...
... For every set of input logic values, either pullup or pulldown network makes connection to VDD or GND • If both connected, power rails would be shorted together • If neither connected, output would float (tristate logic) ...
L03-CMOS-Gates
... Growing silicon dioxide to serve as an insulator between layers deposited on the surface of the silicon wafer. Doping the silicon substrate with acceptor and donor atoms to create p- and n-type ...
... Growing silicon dioxide to serve as an insulator between layers deposited on the surface of the silicon wafer. Doping the silicon substrate with acceptor and donor atoms to create p- and n-type ...
PPT
... • A major school of thought (used in most processors built today): all circuits on the chip share a clock signal (a square wave) that tells every circuit when to accept inputs, how much time they have to execute the logic, and when they must produce outputs ...
... • A major school of thought (used in most processors built today): all circuits on the chip share a clock signal (a square wave) that tells every circuit when to accept inputs, how much time they have to execute the logic, and when they must produce outputs ...
CD54HC21/3A CD54HCT21/3A Dual 4-Input AND Gate Functional Diagram
... Dual 4-Input AND Gate Functional Diagram ...
... Dual 4-Input AND Gate Functional Diagram ...
CSS conference sample
... important, disallowing the formulation of universal rules for optimal logic styles. CMOS logic is providing the almost all requirements of designing high speed and low power circuits. One of the essential features of the CMOS logic circuits is that it employs equal number of nMOS and pMOS transistor ...
... important, disallowing the formulation of universal rules for optimal logic styles. CMOS logic is providing the almost all requirements of designing high speed and low power circuits. One of the essential features of the CMOS logic circuits is that it employs equal number of nMOS and pMOS transistor ...
CISC-340 Digital Systems Everything You Need to Know
... Propagation delay : the time between a change of input and a resulting change in output. Propagation delay is measured at the 50% points of the signals. A typical propagation delay of a CMOS inverter is 10 nanoseconds (ns). Propagation delays increase as more loads are connected to a gate's output. ...
... Propagation delay : the time between a change of input and a resulting change in output. Propagation delay is measured at the 50% points of the signals. A typical propagation delay of a CMOS inverter is 10 nanoseconds (ns). Propagation delays increase as more loads are connected to a gate's output. ...
Electricity revision
... Transformers are used to step up or step down voltage. They only work on AC because an alternating current in the primary coil causes a constantly alternating magnetic field . This will “induce” an alternating current in the secondary coil. ...
... Transformers are used to step up or step down voltage. They only work on AC because an alternating current in the primary coil causes a constantly alternating magnetic field . This will “induce” an alternating current in the secondary coil. ...
Digital Systems: Combinational Logic Circuits
... Digital ICs are a collection of resistors, diodes and transistor fabricated on a single piece of semiconductor material called a substrate, which is commonly referred to as a chip. The chip is enclosed in a package. ...
... Digital ICs are a collection of resistors, diodes and transistor fabricated on a single piece of semiconductor material called a substrate, which is commonly referred to as a chip. The chip is enclosed in a package. ...
Low-voltage pipelined ADC using OPAMP
... One circuit type directly affected by this low-voltage problem is the switched-capacitor circuit, used in many practical analog signal processing applications including data converters. The fundamental limitation on the operation of a floating switch arises when the supply voltage becomes less than ...
... One circuit type directly affected by this low-voltage problem is the switched-capacitor circuit, used in many practical analog signal processing applications including data converters. The fundamental limitation on the operation of a floating switch arises when the supply voltage becomes less than ...
An Ultra-Low-Voltage Ultra-Low-Power OTA With Improved Gain
... RHP zero by the basis of displacement. On the other hand, as prevent the shown in Fig. 1 (b), the employed gain-stage input current from going directly through the Miller capacitor, thus, the RHP zero will eliminate [11]. As can be observed in Fig. 1 (a), at frequencies near unitygain frequency, the ...
... RHP zero by the basis of displacement. On the other hand, as prevent the shown in Fig. 1 (b), the employed gain-stage input current from going directly through the Miller capacitor, thus, the RHP zero will eliminate [11]. As can be observed in Fig. 1 (a), at frequencies near unitygain frequency, the ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.