Download RSF014N03

RSF014N03
Transistors
4V Drive Nch MOSFET
RSF014N03
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
0.2Max.
TUMT3
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT3).
3) 4V drive.
(1) Gate
(2) Source
zApplications
Switching
zPackaging specifications
zInner circuit
Package
Type
Abbreviated symbol : PN
(3) Drain
(3)
Taping
TL
Code
Basic ordering unit (pieces)
3000
RSF014N03
∗2
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
30
20
±1.4
±5.6
0.6
5.6
0.8
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Symbol
Rth(ch-a) ∗
Limits
156
Unit
°C/W
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Rev.B
1/4
RSF014N03
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
IDSS
Zero gate voltage drain current
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
30
−
1.0
−
−
−
1
−
−
−
−
−
−
−
−
−
−
Typ.
Max.
−
−
−
−
170
250
270
−
70
15
12
6
6
13
8
1.4
0.6
0.3
10
−
1
2.5
240
350
380
−
−
−
−
−
−
−
−
2.0
−
−
Conditions
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VGS=20V, VDS=0V
ID= 1mA, VGS=0V
VDS= 30V, VGS=0V
VDS= 10V, ID= 1mA
ID= 1.4A, VGS= 10V
ID= 1.4A, VGS= 4.5V
ID= 1.4A, VGS= 4V
VDS= 10V, ID= 1.4A
VDS= 10V
VGS=0V
f=1MHz
VDD 15V
ID= 0.7A
VGS= 10V
RL=21Ω
RG=10Ω
VDD 15V RL=11Ω
VGS= 5V
RG=10Ω
ID= 1.4A
Unit
V
Conditions
IS= 0.6A, VGS=0V
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD
Min.
−
Typ.
−
Max.
1.2
Rev.B
2/4
RSF014N03
Transistors
zElectrical characteristics curves
SWITCHING TIME : t (ns)
1000
100
Ciss
Coss
Crss
td (off)
10
td (on)
tr
1
0.01
0.1
1
10
100
1
0.01
DRAIN-SOURCE VOLTAGE : VDS (V)
0.1
1000
VDS=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.01
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
0.1
1
0
1
10
2
3
700
ID=1.4A
600
500
ID=0.7A
400
300
200
VGS=0V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
100
0
0
2
4
6
8
10
0.01
0.0
GATE SOURCE VOLTAGE : VGS (V)
10000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
10
0.01
0.1
1
1.0
1.5
Fig.6 Source Current vs.
Source-Drain Voltage
VGS=4.5V
Pulsed
1000
0.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Static Drain-Source
On-State Resistance
vs. Gate-Source Voltage
STATIC DRAIN- SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VGS=10V
Pulsed
10
0.01
1
10
800
Fig.4 Typical Transfer Characteristics
1000
2
Fig.3 Dynamic Input Characteristics
Ta=25°C
900 Pulsed
GATE-SOURCE VOLTAGE : VGS (V)
10000
4
3
TOTAL GATE CHARGE : Qg (nC)
10
0.1
5
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
1
6
0
10
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
0.001
0.5
STATIC DRAIN- SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
1
SOURCE CURRENT : IS (A)
DRAIN CURRENT : ID (A)
tf
100
Ta=25°C
9 VDD=15V
ID=1.4A
8
RG=10Ω
7 Pulsed
10
10000
STATIC DRAIN- SOURCE
ON-STATE RESISTANCE : RDS (om) (mΩ)
10
10
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
GATE SOURCE VOLTAGE : VGS (V)
Ta=25°C
f=1MHz
VGS=0V
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
CAPACITANCE : C (pF)
1000
VGS=4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1000
100
10
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance vs.
Drain Current ( Ι )
Fig.8 Static Drain-Source
On-State Resistance vs.
Drain Current ( ΙΙ )
Fig.9 Static Drain-Source
On-State Resistance vs.
Drain Current ( ΙΙΙ )
Rev.B
3/4
RSF014N03
STATIC DRAIN- SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Transistors
1000
Ta=25°C
Pulsed
VGS=4V
VGS=4.5V
VGS=10V
100
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.10 Static Drain-Source
On-State Resistance vs.
Drain Current ( Ι )
Rev.B
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1