Download RZM002P02

1.2V Drive Pch MOSFET
RZM002P02
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
1.2
0.32
zFeatures
1) High Speed Switching.
2) Small package (VMT3).
3) Ultra Low Voltage drive. (1.2V drive)
0.2
VMT3
0.8
1.2
(3)
(1)(2)
0.4 0.4
0.2
0.22
0.13
0.5
0.8
(1)Gate
(2)Source
(3)Drain
zApplications
Switching
Abbreviated symbol : YK
zInner circuit
(3)
zPackaging specifications
Package
Type
Taping
Code
T2L
Basic ordering unit (pieces)
8000
∗2
(1)
∗1
RZM002P02
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current (Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−20
±10
±200
±800
−100
−800
150
150
−55 to +150
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
Symbol
Limits
Unit
833
°C/W
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
Channel to ambient
Rth(ch-a) ∗
∗ Each terminal mounted on a recommended land
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/4
2009.06 - Rev.B
Data Sheet
RZM002P02
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
−
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS −20
IDSS
Zero gate voltage drain current
−
Gate threshold voltage
VGS (th) −0.3
−
−
Static drain-source on-state
−
RDS (on)∗
resistance
−
−
Forward transfer admittance
Yfs ∗ 0.2
Input capacitance
Ciss
−
Output capacitance
Coss
−
Crss
Reverse transfer capacitance
−
td (on) ∗
Turn-on delay time
−
Rise time
tr ∗
−
td (off) ∗
Turn-off delay time
−
tf ∗
Fall time
−
Qg ∗
Total gate charge
−
Gate-source charge
Qgs ∗
−
Gate-drain charge
Qgd ∗
−
Typ.
Max.
−
−
−
−
0.8
1.0
1.3
1.6
2.4
−
115
10
6
6
4
17
17
1.4
0.3
0.3
±10
−
−1
−1.0
1.2
1.5
2.2
3.5
9.6
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
Ω
Ω
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS= ±10V, VDS=0V
ID= −1mA, VGS=0V
VDS= −20V, VGS=0V
VDS= −10V, ID= −100uA
ID= −200mA, VGS= −4.5V
ID= −100mA, VGS= −2.5V
ID= −100mA, VGS= −1.8V
ID= −40mA, VGS= −1.5V
ID= −10mA, VGS= −1.2V
VDS= −10V, ID= −200mA
VDS= −10V
VGS= 0V
f=1MHz
VDD −10V
ID= −100mA
VGS= −4.5V
RL 100Ω
RG= 10Ω
VDD −10V, ID= −200mA
VGS= −4.5V
RL 50Ω, RG= 10Ω
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
IS= −200mA, VGS=0V
∗Pulsed
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/4
2009.06 - Rev.B
Data Sheet
RZM002P02
zElectrical characteristic curves
VGS= -2.5V
VGS= -2.0V
VGS= -1.8V
0.1
VGS= -1.5V
0.05
VGS= -1.2V
VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
0.15
VGS= -1.2V
0.1
0.05
0.6
0.8
1
0
2
DRAIN-SOURCE VOLTAGE : -VDS[V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
10000
1000
VGS= -1.2V
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
0.1
1
0.01
100
0.001
1
1000
1
Resistance vs. Drain Current(Ⅲ)
10000
DRAIN-CURRENT : -ID [A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
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c 2009 ROHM Co., Ltd. All rights reserved.
○
VGS= -1.2V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.01
DRAIN-CURRENT : -ID [A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
3/4
1
Fig.6 Static Drain-Source On-State
VGS= -1.5V
Pulsed
100
0.001
0.1
DRAIN-CURRENT : -ID [A]
1000
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.01
Resistance vs. Drain Current(Ⅱ)
10000
1.5
1000
Fig.5 Static Drain-Source On-State
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.01
VGS= -2.5V
Pulsed
DRAIN-CURRENT : -ID [A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(ON)[mΩ]
0.1
1
Fig.3 Typical Transfer Characteristics
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
Resistance vs. Drain Current(Ⅰ)
100
0.001
0.5
GATE-SOURCE VOLTAGE : -VGS[V]
1000
Fig.4 Static Drain-Source On-State
VGS= -1.8V
Pulsed
0
10
10000
VGS= -4.5V
Pulsed
DRAIN-CURRENT : -ID [A]
10000
8
Fig.2 Typical output characteristics(Ⅱ)
Ta=25°C
Pulsed
0.01
6
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical output characteristics(Ⅰ)
100
0.001
4
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
0.4
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.001
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(ON)[mΩ]
0.2
Ta= 125°C
0.01
0.0001
0
0
0.1
VGS= -1.0V
VGS= -1.0V
0
10000
1 V = -10V
DS
Pulsed
Ta=25°C
Pulsed
VGS= -4.5V
DRAIN CURRENT : -ID [A]
VGS= -10.0V
VGS= -4.5V
VGS= -3.2V
0.15
0.2
Ta=25°C
Pulsed
DRAIN CURRENT : -ID [A]
DRAIN CURRENT : -ID [A]
0.2
0.1
100
0.001
0.01
0.1
DRAIN-CURRENT : -ID [A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅵ)
2009.06 - Rev.B
Data Sheet
Ta=-25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.1
0.01
0.1
0.5
tf
100
1
td(on)
1
1
0
2
0.1
1
3
2
Ta=25°C
VDD = -10V
ID = -0.2A
R G=10Ω
Pulsed
0
0.5
1
Ta=25°C
f=1MHz
VGS=0V
8
10
Ciss
100
10
Coss
Crss
1
0.01
1.5
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
TOTAL GATE CHARGE : Qg [nC]
DRAIN-CURRENT : -ID [A]
Fig.13 Switching Characteristics
6
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
4
1
4
GATE-SOURCE VOLTAGE : -VGS[V]
1000
0
0.01
ID = -0.01A
2
1.5
5
Ta=25°C
VDD = -10V
VGS=-4.5V
R G=10Ω
Pulsed
10
tr
ID = -0.2A
3
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : -VGS [V]
td(off)
4
SOURCE-DRAIN VOLTAGE : -VSD [V]
DRAIN-CURRENT : -ID [A]
1000
Ta=25°C
Pulsed
0
0
1
Fig.10 Forward Transfer Admittance
vs. Drain Current
SWITCHING TIME : t [ns]
5
VGS=0V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[Ω]
1
VDS= -10V
Pulsed
CAPACITANCE : C [pF]
1.0
REVERSE DRAIN CURRENT : -Is [A]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
RZM002P02
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
Fig.14 Dynamic Input Characteristics
zMeasurement circuit
Pulse width
ID
VDS
VGS
VGS
10%
50%
50%
90%
RL
D.U.T.
10%
VDD
RG
VDS
90%
td(on)
90%
td(off)
tr
ton
Fig.1-1 Switching Time Measurement Circuit
10%
tf
toff
Fig.1-2 Switching Waveforms
VG
ID
VDS
VGS
RL
IG (Const.)
D.U.T.
RG
Qg
VGS
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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c 2009 ROHM Co., Ltd. All rights reserved.
○
4/4
2009.06 - Rev.B
Notice
Notes
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
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Please be sure to implement in your equipment using the Products safety measures to guard
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The Products are not designed or manufactured to be used with any equipment, device or
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