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Mechanisms underlying
rapid memory IgG responses
Dec. 03 (WED), 11:00 / Auditorium (1F), PBC
Tomohiro Kurosaki Ph.D.
WPI Immunology Frontier Research Center, Osaka University
One striking feature of humoral memory response is quick
generation of neutralizing antibodies (Abs) upon re-invasion of
pathogenic micro-organisms and eliminating them from our body.
However, it is still unclear about cellular and molecular
mechanisms underlying such quick humoral responses.
By using model T-dependent antigens, we propose that the
following three mechanisms synergistically operate. First, IgG type
memory B cells are pre-localized in the place where they can gain
easy access to the antigen. Second, Tfh type memory T cells,
which reside near to the memory IgG B cells. These memory T
cells are promptly activated by antigen-presentation on IgG
memory B cells and re-express Bcl6, which in turn activates IgG
memory B cells. Finally, IgG memory B cells undergo repression of
the Bach2 transcription factor (one of the BCR-extrinsic changes)
during primary immune responses, which in turn, contributes to
rapid differentiation towards plasma cells.
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