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Download Thermal Analysis Infrared Microscopy During device functioning, the
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Thermal Analysis 1. Infrared Microscopy During device functioning, the zones affected by defects have a higher local temperature than the defect-free ones. The infrared microscope can be used at wafer level, for thermal analysis, displaying the temperature distribution. Thermal images based on the infrared radiance emitted from the structures are constructed, and hot spots (regions with high temperatures) can be found as areas were defects are present. Then, the defects can be studied by other methods(SEM, etc.), and methods for diminishing their action are elaborated. The IR microscope is particularly useful for visualizing interface or structural defects, beyond the layers that are transparent to IR. 2. Equipment for Dynamic Mechanical-Thermal Analysis The equipment can be used for analyszing the behavior of the device at wafer level. Suitable especially for microelectromechanical systems (MEMS), the method is aimed at characterizing the behavior of the mechanical moving part of MEMS, the actuating system. 3. Mechanical Properties Characterizing mechanical properties of the materials used for manufacturing semiconductors could be a consititutive part of the failure analysis. This is true mainly for semiconductor devices with moving mechanical parts, for example MEMS. The mechanical properties are valuable inputs for the design, and then are monitored during manufacturing, as significant parameters for describing failure risks. Some examples are given in the following. The residual stress is a key parameter for MEMS, which might significantly decrease the performance and reliability of the device. It is important to accurately measure the residual stresses at various manufacturing steps, by XRD test of vibration method of by in situ measurements aimed to identify local residual stresses of MEMS thin films. Other methods for obraining mechanical parameters could be mentioned: nanoindentation, bulge methods, bending tests, tensile tests, and others. 4. Other Methods If the failure mechanism is not discovered with the aforementioned means, some other tools must be used. Ecamples of such tools for discovering more about the failure couse are: Methods using secondary electrons, back-scattered and Auger electrons: Auger electron spectroscopy, scanning Auger microprobe, transmission electron microscope, transmission electron energy-loss microscopy, lowenergy electron diffraction. Methods using electron-induced photon emission: electron probe microanalysis with x-ray, appearance potential spectroscopy. Methods using photo- and Auger electron emission: electron spectroscopy for chemical analysis, x-ray induced Auger electron spectroscopy, ultraviolet photoelectron spectrometry. Methods using sampling by laser-induced emission: atomic absorption spectroscopy, optical emission spectroscopy. Methods using fluorescence and reflection: x-ray fluorescence spectrometric analysis, light microscopy IR, UV and Raman scattering, laser optical spectrometry. Methods using ion beam and scattering: ion scattering spectrometry, Rutherford back-scattering spectrometry, neutron activation analysis, focused ion beam-FIB (which uses a 30-keV beam of positive gallium ions to irradiate the surface of the sample in a defined area; this irradiation causes surface charging, which can be neutralized by a flow a low energy electrons, around 30 eV, from a flood gun; images can be made using a signal consisting of either secondary ions or secondary electrons with or without charge neutralization by the electron flood gun; the FIB has been used to image structures, to cross-section elements of concern and to cut elements free for subsequent examination). Methods using acoustic waves, for example acoustic scanning microscope (ASM), used for the near surface zone of the semiconductor structures, able to detect the modifications of material properties-on surface and near the surface (structure modifications, regions with weak adherence, micro-cracks, micro-exfoliations). It is important to note that all these special means (and others) must be used only to identify the failure mechanism. In other words, the special means must be needed by the logic of the failure analysis. A tendency to embellish the failure reports by adding “beautiful” results (impressive pictures or diagrams obtained with sophisticated tools) is encountered all over the world. Often, such a technique is used only for making a scientific paper more convincing, but it is also the most powerful argument for increasing the price required for a failure report. The customer must be aware that sometimes expensive reports are not the best ones.