Mössbauer Spectrometry
... structural properties within materials. A Mössbauer spectrum is an intensity of γ-ray absorption versus energy for a specific resonant nucleus such as 57Fe or 119Sn. Mössbauer spectrometry looks at materials from the “inside out,” where “inside” refers to the resonant nucleus. For one nucleus to emi ...
... structural properties within materials. A Mössbauer spectrum is an intensity of γ-ray absorption versus energy for a specific resonant nucleus such as 57Fe or 119Sn. Mössbauer spectrometry looks at materials from the “inside out,” where “inside” refers to the resonant nucleus. For one nucleus to emi ...
Absorption Techniques in X
... the wavelength of an electron le does not satisfy the Bragg condition, 2d sin q D nle . When the Bragg condition is satisfied, then the electrons are scattered and leave the solid. His theory explained EXAFS and thus EXAFS was called the Kronig structure. His theory was called the long-range order ( ...
... the wavelength of an electron le does not satisfy the Bragg condition, 2d sin q D nle . When the Bragg condition is satisfied, then the electrons are scattered and leave the solid. His theory explained EXAFS and thus EXAFS was called the Kronig structure. His theory was called the long-range order ( ...
Complex defects
... which dissolve protons and become proton conductors at high temperatures. A revision of the book from 1972 as such is thus unrealistic in many respects. In the early 1990s Kofstad decided to author a new text that represented a development of the general and theoretical first part of the former book ...
... which dissolve protons and become proton conductors at high temperatures. A revision of the book from 1972 as such is thus unrealistic in many respects. In the early 1990s Kofstad decided to author a new text that represented a development of the general and theoretical first part of the former book ...
Electron-beam lithography
Electron-beam lithography (often abbreviated as e-beam lithography) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (""exposing""). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (""developing""). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.The primary advantage of electron-beam lithography is that it can draw custom patterns (direct-write) with sub-10 nm resolution. This form of maskless lithography has high resolution and low throughput, limiting its usage to photomask fabrication, low-volume production of semiconductor devices, and research & development.