
LMD18200 3A, 55V H-Bridge
... General Description The LMD18200 is a 3A H-Bridge designed for motion control applications. The device is built using a multi-technology process which combines bipolar and CMOS control circuitry with DMOS power devices on the same monolithic structure. Ideal for driving DC and stepper motors; the LM ...
... General Description The LMD18200 is a 3A H-Bridge designed for motion control applications. The device is built using a multi-technology process which combines bipolar and CMOS control circuitry with DMOS power devices on the same monolithic structure. Ideal for driving DC and stepper motors; the LM ...
Current, resistance, and electromotive force
... Good conductor (small resistivity), superconducting For metals, resistance and temperature coefficient of resistivity increases as temperature increasing. ...
... Good conductor (small resistivity), superconducting For metals, resistance and temperature coefficient of resistivity increases as temperature increasing. ...
Physical Properties of Logic Devices
... • Some logic operates on 3.3 Volts, others on 12 Volts and yet other applications operate on a +12/-12 Volt logic. o many digital logic devices produce logic values that are not ideal. ...
... • Some logic operates on 3.3 Volts, others on 12 Volts and yet other applications operate on a +12/-12 Volt logic. o many digital logic devices produce logic values that are not ideal. ...
Digital Integrated Circuits for Communication Design
... At every point in time (except during the switching transients) each gate output is connected to either VDD or Vss via a low-resistance path. the outputs of the gates assume at all times the value of the Boolean function implemented by the circuit (ignoring, once again, the transient effects during ...
... At every point in time (except during the switching transients) each gate output is connected to either VDD or Vss via a low-resistance path. the outputs of the gates assume at all times the value of the Boolean function implemented by the circuit (ignoring, once again, the transient effects during ...
CB-90 ASIC Design Platform - Renesas Electronics Europe
... provides a choice between three different transistor types to enable optimal allocation of performance/low power/high integration areas on the same chip. ...
... provides a choice between three different transistor types to enable optimal allocation of performance/low power/high integration areas on the same chip. ...
UNIT 1 Microelectronics and Electronic Circuits
... complete electronic circuit, an operational amplifier for example, which contains large numbers of individual interconnected components, such as diodes resistors, transistors, etc. may be formed on a very small single substrate. The complete miniaturized circuit is then called an integrated circuit. ...
... complete electronic circuit, an operational amplifier for example, which contains large numbers of individual interconnected components, such as diodes resistors, transistors, etc. may be formed on a very small single substrate. The complete miniaturized circuit is then called an integrated circuit. ...
Gates and Circuits - SIUE Computer Science
... In addition to the input connection (the base) Transistors are connected to both a power source and a voltage dissipating ground. ...
... In addition to the input connection (the base) Transistors are connected to both a power source and a voltage dissipating ground. ...
ppt
... Cannot Generate Power Active Device (Voltage or Current Source) Can generate power Requires some sort physical or chemical activity Converts this to Electrical Power Efficiency < 100% OpAmp (Active Device) Absorbs power from a power supply Converts this power to another form Amplify ...
... Cannot Generate Power Active Device (Voltage or Current Source) Can generate power Requires some sort physical or chemical activity Converts this to Electrical Power Efficiency < 100% OpAmp (Active Device) Absorbs power from a power supply Converts this power to another form Amplify ...
A High-Voltage Tolerant Interface Circuit for Embedded CMOS Non
... stresses, the operating voltages become lower and lower. However, in some applications high-voltage interfaces are still required, such as MEMS device control, power convertor switching, embedded non-volatile memory control circuits, and so on. The on-die high-voltage interface in the standard CMOS ...
... stresses, the operating voltages become lower and lower. However, in some applications high-voltage interfaces are still required, such as MEMS device control, power convertor switching, embedded non-volatile memory control circuits, and so on. The on-die high-voltage interface in the standard CMOS ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.