Download NPN Bipolar Transistor for High-Current Switching Applications

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Transcript
2SC6043
Ordering number : ENN8326
2SC6043
NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Applications
•
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
•
•
•
•
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
80
V
Collector-to-Emitter Voltage
VCES
80
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
6
V
2
A
4
Base Current
IC
ICP
IB
Collector Dissipation
PC
1
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Collector Current
Collector Current (Pulse)
400
A
mA
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
hFE1
hFE2
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
fT
Cob
Conditions
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=100mA
VCE=2V, IC=1.5A
VCE=10V, IC=300mA
Ratings
min
typ
Unit
max
200
1
µA
1
µA
560
40
420
VCB=10V, f=1MHz
9
MHz
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
www.BDTIC.com/ON/
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005EA MS IM TB-00001324 No.8326-1/4
2SC6043
Continued from preceding page.
Parameter
Symbol
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CES
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-ON Time
Storage Time
min
typ
IC=1A, IB=50mA
IC=1A, IB=50mA
IC=10µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=10µA, IC=0A
mV
V
80
V
80
V
50
V
V
ns
See specified Test Circuit.
330
ns
tf
See specified Test Circuit.
40
ns
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
8.5
VR
OUTPUT
RB
RL
50Ω
+
100µF
3.0
1.0
+
470µF
VBE= --5V
0.5
VCC=25V
14.0
IC=10IB1= --10IB2=700mA
1 : Emitter
2 : Collector
3 : Base
1 2 3
SANYO : MP
IC -- VCE
1.4
VCE=2V
20mA
1.8
15mA
1.6
10mA
1.2
1.0
5mA
0.8
3mA
0.6
2mA
0.4
1.4
1.2
1.0
°C
25°C
--25°
C
50mA
1.8
IC -- VBE
2.0
25mA
Collector Current, IC -- A
30mA
0.8
Ta=7
5
1.45
2.0
Collector Current, IC -- A
1.2
35
INPUT
1.6
300
6
4.7
1.45
150
0.94
See specified Test Circuit.
Package Dimensions
unit : mm
7520-002
0.5
0.6
0.5
Unit
max
ton
tstg
Fall Time
6.0
5.0
Ratings
Conditions
0.6
0.4
1mA
0.2
0.2
IB=0mA
0
0
0.2
0
www.BDTIC.com/ON/
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Collector-to-Emitter Voltage, VCE -- V
1.8
2.0
IT09719
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
IT09720
No.8326-2/4
2SC6043
hFE -- IC
7
fT -- IC
7
VCE=2V
VCE=2V
Gain-Bandwidth Product, fT -- MHz
Ta=75°C
5
DC Current Gain, hFE
25°C
3
--25°C
2
100
7
5
0.01
2
3
5
7
2
0.1
3
5
7
2
1.0
Collector Current, IC -- A
2
100
7
5
2
3
5
7 0.1
2
3
5
7 1.0
IC / IB=20
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
10
7
5
3
IT09722
VCE(sat) -- IC
7
5
2
Collector Current, IC -- A
IT09721
f=1MHz
Output Capacitance, Cob -- pF
3
3
0.01
3
Cob -- VCB
7
5
3
2
°C
25
0.1
7
°C
75
5
=
Ta
3
°C
5
--2
2
0.01
3
0.1
2
3
5
7 1.0
2
3
5
7 10
2
Collector-to-Base Voltage, VCB -- V
3
5
7
0.01
7
7 0.1
2
3
5
7 1.0
<10µs
Collector Current, IC -- A
7
75°C
5
10
0m
µs
Ta= --25°C
DC
500
1.0
1.0
7
5
s
1m
10 s
ms
2
0µ
2
3
ASO
3
25°C
2
IT09724
10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
7
5
IC / IB=20
s
op
era
3
tio
n
2
0.1
7
5
3
2
3
0.01
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
IT09725
PC -- Ta
1.2
Collector Dissipation, PC -- W
3
Collector Current, IC -- A
VBE(sat) -- IC
3
2
IT09723
Ta=25°C
Single pulse
0.01
0.1
2
3
5
7 1.0
2
3
5
7 10
2
Collector-to-Emitter Voltage, VCE -- V
3
5
7
IT09726
1.0
0.8
0.6
0.4
0.2
0
0
20
www.BDTIC.com/ON/
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT09727
No.8326-3/4
2SC6043
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
www.BDTIC.com/ON/
PS No.8326-4/4