Download QS6U22

QS6U22
Transistors
2.5V Drive Pch+SBD MOS FET
QS6U22
zStructure
Silicon P-channel MOS FET
Schottky Barrier DIODE
zExternal dimensions (Unit : mm)
TSMT6
1.0MAX
2.9
1.9
0.95 0.95
(5)
0.85
0.7
(4)
1.6
2.8
(2)
(1)
0~0.1
0.3~0.6
zFeatures
1) The QS6U22 combines Pch MOS FET with a Schottky
barrier diode in a TSMT6 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
(6)
(3)
1pin mark
0.16
0.4
Each lead has same dimensions
Abbreviated symbol : U22
zApplications
Load switch, DC / DC conversion
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
zEquivalent circuit
Taping
(6)
(5)
(4)
TR
3000
QS6U22
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
(1) Anode
(2) Source
(3) Gate
(4) Drain
(5) N / C
(6) Cathode
∗A protection diode has been in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Rev.A
1/4
QS6U22
Transistors
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Tch
PD ∗3
Limits
−20
±12
±1.5
±6.0
−0.75
−6.0
150
0.9
Unit
V
V
A
A
A
A
°C
W / ELEMENT
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
VRM
VR
IF
IFSM
Tj
PD
25
20
0.7
3.0
150
0.7
V
V
A
A
°C
W / ELEMENT
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
PD ∗3
Tstg
1.25
−55 to +150
W / TOTAL
°C
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power dissipation
∗2
∗3
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
〈MOSFET〉
Parameter
Symbol Min.
−
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS −20
−
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th) −0.7
−
Static drain-source on-state
∗
−
RDS (on)
resistance
−
Yfs ∗ 1.0
Forward transfer admittance
Ciss
−
Input capacitance
−
Coss
Output capacitance
−
Crss
Reverse transfer capacitance
−
td (on) ∗
Turn-on delay time
−
tr ∗
Rise time
−
td (off) ∗
Turn-off delay time
−
tf ∗
Fall time
−
Qg ∗
Total gate charge
−
Qgs ∗
Gate-source charge
−
Qgd ∗
Gate-drain charge
Typ.
−
−
−
−
155
170
310
−
270
40
35
10
12
45
20
3.0
0.8
0.85
Max.
±10
−
−1
−2.0
215
235
430
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±12V, VDS=0V
ID= −1mA, VGS=0V
VDS= −20V, VGS=0V
VDS= −10V, ID= −1mA
ID= −1.5A, VGS= −4.5V
ID= −1.5A, VGS= −4V
ID= −0.75A, VGS= −2.5V
VDS= −10V, ID= −0.75A
VDS= −10V
VGS=0V
f=1MHz
ID= −0.75A
VDD −15V
VGS= −4.5V
RL=20Ω
RG=10Ω
VDD −15V
VGS= −4.5V
RL=10Ω / RG=10Ω
ID= −1.5A
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
IS= −0.75A, VGS=0V
Min.
−
−
Typ.
−
−
Max.
0.49
200
Unit
V
µA
IF=0.7A
VR=20V
∗Pulsed
〈Body diode (source−drain)〉
Parameter
Forward voltage
Symbol
VSD
〈Di〉
Parameter
Forward voltage drop
Reverse current
Symbol
VF
IR
Conditions
Rev.A
2/4
QS6U22
Transistors
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.01
0.001
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS= −10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1000
100
0.1
1
GATE-SOURCE VOLTAGE : −VGS (V)
VGS= −4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1000
100
0.1
1
10
1200
1000
900
800
700
600
500
400
300
200
2
4
6
8
10
12
1000
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
14
16
0.1
Ta=25°C
f=1MHz
VGS=0V
100
0.5
1
1.5
2
SOURCE-DRAIN VOLTAGE : −VSD (V)
Ciss
Fig.7 Reverse Drain Current vs.
Source-Drain Voltage
10
0.01
0.1
1
10
10000
Ta=25°C
Pulsed
VGS= −4.0V
VGS= −4.5V
VGS= −10V
1000
100
0.1
10
100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.8 Typical Capacitance vs.
Drain-Source Voltage
1
10
DRAIN CURRENT : −ID (A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current ( )
1000
Ta=25°C
VDD= −15V
VGS= −10A
RG=10Ω
Pulsed
100
tf
td (off)
10
td (on)
tr
Coss
Crss
0.01
0.0
1
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙ)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
CAPACITANCE : C (pF)
REVERSE DRAIN CURRENT : −IS (A)
0
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
0.1
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙΙ)
1
Ta=25°C
Pulsed
ID= −1.2A
ID= −0.6A
1100
DRAIN CURRENT : −ID (A)
10
1000
VGS= −4.5V
Pulsed
DRAIN CURRENT : −ID (A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (Ι)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Fig.1 Typical Transfer Characteristics
10000
10
10000
DRAIN CURRENT : −ID (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
0.1
10000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VDS= −10V
Pulsed
SWITCHING TIME : t (ns)
DRAIN CURRENT : −ID (A)
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
zElectrical characteristic curves
<MOSFET>
1
0.01
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.9 Switching Characteristics
Rev.A
3/4
QS6U22
Transistors
GATE-SOURCE VOLTAGE : VGS (V)
8
Ta=25°C
VDD= −15V
ID= −1.2A
RG=10Ω
Pulsed
7
6
5
4
3
2
1
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Dynamic Input Characteristics
zMeasurement circuits
Pulse Width
VGS
ID
VDS
VGS
10%
50%
50%
90%
RL
10%
D.U.T.
10%
RG
VDD
VDS
90%
td(on)
90%
td(off)
tr
ton
Fig.11 Switching Time Measurement Circuit
tr
toff
Fig.12 Switching Waveforms
VG
VGS
ID
VDS
RL
IG(Const)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.13 Gate Charge Measurement Circuit
Fig.14 Gate Charge Waveform
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1