* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Download STL3NM60N
Survey
Document related concepts
Variable-frequency drive wikipedia , lookup
Mechanical filter wikipedia , lookup
Electrical substation wikipedia , lookup
Pulse-width modulation wikipedia , lookup
Electromagnetic compatibility wikipedia , lookup
Thermal runaway wikipedia , lookup
Voltage optimisation wikipedia , lookup
Portable appliance testing wikipedia , lookup
Current source wikipedia , lookup
Switched-mode power supply wikipedia , lookup
Surge protector wikipedia , lookup
Mains electricity wikipedia , lookup
Stray voltage wikipedia , lookup
Resistive opto-isolator wikipedia , lookup
Alternating current wikipedia , lookup
Two-port network wikipedia , lookup
Opto-isolator wikipedia , lookup
Transcript
STL3NM60N N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET in PowerFLAT™ 3.3 x 3.3 HV package Datasheet — preliminary data Features Order code RDS(on) max. 2 3 4 (1) < 1.8 Ω STL3NM60N 1 ID 2.2 A 1. The value is rated according to Rthj-case 8 5 7 6 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 6 7 5 8 PowerFLAT™ 3.3x3.3 HV Application ■ Switching applications Description Figure 1. This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Internal schematic diagram 4 G 5 6 3 D 2 1 7 8 S Bottom View Table 1. Device summary Order code Marking Package Packaging STL3NM60N 3NM60N PowerFLAT™ 3.3 x 3.3 HV Tape and reel March 2012 Doc ID 022795 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.bdtic.com/ST 1/13 www.st.com 13 Contents STL3NM60N) Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 022795 Rev 1 www.bdtic.com/ST STL3NM60N) 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ± 25 V ID(1) Drain current (continuous) at TC = 25 °C 2.2 A ID (1) Drain current (continuous) at TC=100 °C 1.7 A ID (2) Drain current (continuous) at Tamb = 25 °C 0.65 A ID (2) Drain current (continuous) at Tamb =100 °C 0.5 A Drain current (pulsed) 2.6 A 2 W 22 W 1 A 119 mJ 0.016 W/°C 15 V/ns -55 to 150 °C Value Unit Thermal resistance junction-case max. 5.6 °C/W Thermal resistance junction-amb max. 62.5 °C/W IDM (2)(3) PTOT (2) PTOT (1) IAS Total dissipation at Tamb = 25 °C Total dissipation at TC = 25 °C Avalanche current, repetitive or not-repetitive Single pulse avalanche energy EAS (3) (4) Derating factor (2) dv/dt (5) TJ Peak diode recovery voltage slope Operating junction temperature storage temperature Tstg 1. The value is rated according Rthj-case. 2. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec 3. Pulse width limited by Tjmax 4. Starting Tj = 25 °C, ID= IAS, VDD = 50 V 5. ISD ≤ 2.2 A, dv/dt ≤ 400 A/µs,VDS peak ≤V(BR)DSS, VDD= 80% V(BR)DSS. Table 3. Thermal resistance Symbol Rthj-case Rthj-amb (1) Parameter 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec. Doc ID 022795 Rev 1 www.bdtic.com/ST 3/13 Electrical characteristics 2 STL3NM60N) Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage (VGS= 0) ID = 1 mA IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V, VDS = 600 V, Tc = 125 °C 1 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 25 V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 1 A 1.5 1.8 Ω Min. Typ. Max. Unit V(BR)DSS Table 5. Symbol 600 V 2 Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50V, f=1 MHz, VGS=0 - 188 13 1.1 - pF pF pF (1) Output equivalent capacitance VGS =0, VDS =0 to 480 V - 100 - pF Rg Gate input resistance f=1 MHz gate DC bias=0 test signal level = 20 mV open drain - 6 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 480 V, ID = 2.2 A VGS =10 V (see Figure 15) - 9.5 1.6 5.3 - nC nC nC Ciss Coss Crss Coss eq. 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/13 Doc ID 022795 Rev 1 www.bdtic.com/ST STL3NM60N) Electrical characteristics Table 6. Switching times Symbol Parameter Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf Table 7. Symbol ISDM (1),(2) (3) trr Qrr IRRM trr Qrr IRRM Min. Typ. Max. 8.6 6.2 20.8 20 VDD= 300 V, ID = 1.1 A, RG= 4.7 Ω, VGS = 10 V (see Figure 14) Unit ns ns ns ns Source drain diode Parameter Test conditions Min Typ. Source-drain current ISD VSD Test conditions Max Unit 2.2 A 8.8 A 1.6 V Source-drain current (pulsed) Forward on voltage ISD= 2.2 A, VGS=0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.2 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16) - 168 672 8 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.2 A, di/dt = 100 A/µs, VDD = 60 V, Tj= 150 °C (see Figure 16) - 2.3 913 9 ns nC A 1. Pulse width limited by safe operating area. 2. When mounted on FR-4 board of 1inch², 2 oz Cu. 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022795 Rev 1 www.bdtic.com/ST 5/13 Electrical characteristics STL3NM60N) 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM11244v1 ID (A) Zth_powerFLAT 3.3x3.3 K δ=0.5 1 Tj=150°C Tc=25°C Sinlge pulse is ea ) ar S(on D R ax 0.2 is th 0.05 in n m tio y ra d b e e p O imit L 0.1 0.1 -1 10µs 10 0.02 100µs 0.01 0.01 Zth=k Rthj-pcb Rthj-pcb=62.5 °C/W δ=tp/τ 1ms 10ms tp -2 0.001 0.1 Figure 4. 10 1 100 10 -3 10 VDS(V) Output characteristics Figure 5. AM11245v1 ID (A) VGS=10V 5 3 2 2 5V 1 0 0 5 10 20 15 25 1 10 10 2 10 tp (s) 10 Transfer characteristics AM11246v1 VDS=21V 30 1 VDS(V) 0 0 Gate charge vs gate-source voltage Figure 7. AM11247v1 VDS (V) VGS (V) VDD=480V ID=2.2A 12 500 VDS 400 2 4 8 6 10 VGS(V) Static drain-source on resistance AM11248v1 RDS(on) (Ω) 1.58 VGS=10V 1.56 1.54 1.52 8 300 6 1.50 1.48 200 4 100 2 1.46 1.44 1.42 0 6/13 10 ID (A) 3 0 0 -1 4 6V 10 -2 5 4 Figure 6. τ Single pulse 2 4 6 8 0 10 Qg(nC) 1.40 0 0.5 1 1.5 Doc ID 022795 Rev 1 www.bdtic.com/ST 2 ID(A) STL3NM60N) Figure 8. Electrical characteristics Capacitance variations Figure 9. AM11249v1 C (pF) Output capacitance stored energy AM11250v1 Eoss (µJ) 1.5 1000 Ciss 1 100 Coss 0.5 Crss VDS(V) 0 0 10 1 0.1 1 100 10 Figure 10. Normalized gate threshold voltage vs temperature AM11252v1 VGS(th) 400 500 600 200 300 100 VDS(V) Figure 11. Normalized on resistance vs temperature AM11253v1 RDS(on) (norm) (norm) 2.5 1.10 ID=250µA ID=2.2A 2.1 1.00 1.7 0.90 1.3 0.80 0.70 -50 0.9 -25 25 0 50 75 100 TJ(°C) Figure 12. Normalized BVDSS vs temperature AM11251v1 BVDSS (norm) 0.5 -50 -25 0 75 100 50 TJ(°C) Figure 13. Source-drain diode forward characteristics AM11254v1 VSD (V) 1.4 1.07 ID=1mA TJ=-50°C 1.05 1.2 1.03 1.0 1.01 0.8 0.99 0.6 0.97 0.4 0.95 0.2 0.93 -50 -25 25 TJ=25°C TJ=150°C 0 0 25 50 75 100 TJ(°C) 0 0.5 1.0 1.5 Doc ID 022795 Rev 1 www.bdtic.com/ST 2.0 ISD(A) 7/13 Test circuits 3 STL3NM60N) Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform AM01471v1 Figure 19. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDS VDD 90% VGS AM01472v1 8/13 0 10% Doc ID 022795 Rev 1 www.bdtic.com/ST AM01473v1 STL3NM60N) 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 8. PowerFLAT™ 3.3 x 3.3 HV mechanical data mm Dim. Min. Typ. Max. A 0.80 0.90 1.00 A1 0 0.02 0.05 b 0.25 0.30 0.40 D D2 3.30 2.50 E E2 2.75 3.30 1.15 e L 2.65 1.30 1.40 0.65 0.20 0.30 aaa 0.10 bbb 0.10 ccc 0.10 ddd 0.05 eee 0.08 Doc ID 022795 Rev 1 www.bdtic.com/ST 0.40 9/13 Package mechanical data STL3NM60N) Figure 20. PowerFLAT™ 3.3 x 3.3 HV drawing . 8374983_Rev_A 10/13 Doc ID 022795 Rev 1 www.bdtic.com/ST STL3NM60N) Package mechanical data Figure 21. PowerFLAT™ 3.3 x 3.3 HV recommended footprint (dimensions are in mm) 8374983_footprint Doc ID 022795 Rev 1 www.bdtic.com/ST 11/13 Revision history 5 STL3NM60N) Revision history Table 9. 12/13 Document revision history Date Revision 14-Mar-2012 1 Changes First release. Doc ID 022795 Rev 1 www.bdtic.com/ST STL3NM60N) Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 022795 Rev 1 www.bdtic.com/ST 13/13